OOL49L8 7 MESIEG . 880 14918 0 T+39-/3 BUZ 214 STEMENS AKTIENGESELLSCHAF i Malin ratings N-Channel Drain-source voltage Ys = 500V - Continuous drain current h =7A Drain-source on-resistance Agsn, = 0,82 G Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode $ { Case Plastic package TO 238 AA with insulated metal base plate in accordance with : JEDEC, compatible with TO 3; AMP plug-in connections. i Approx. weight 21 g Type | Ordering code BUZ 214 | C67078-A1701-A2 2 56 48x06 |* P44 te Gis rf, = 7 D SY, vf ei | =F Las N Mm -e 30,1 | 63x08 38,2 ~ Di tons i Maximum ratings mensonemm Description Symbols | Ratings Units Conditions Drain-source voltage Vos 500 Vv Drain-gate voltage Voar 500 Vv Rigg = 20 kQ Continuous drain current h 7 A To = 40C Pulsed drain current Touts 28 A Ts = 25C Gate-source voltage Vas +20 Vv Max. power dissipation Py 83,3 Ww Tog = 25C Operating and storage i temperature range Tatg 40...+150 | C Isolation test voltage Ve 3500 Vdc") t =1min DIN humidity category F - DIN 40040 IEC climatic category 40/150/56 DIN IEC 68-1 Thermal resistance Chip case | Ainuc | <15 | KW ) Isolation test voltage batween drain and base plate referred to standard climate 23/50 In accordance with DIN 80014. 628 1210Baa --- TE Se SE TS eee ae OS <a 88D D MM 8235605 OOL49L9 1 MESIEG gap 14919 od T3E4-/3 BUZ 214 SIEMENS AKTIENGESELLSCHAF Electrical characteristics (at 7; = 25C unless otherwise specified) . -- Description Symbol Characteristics Unit | Conditions min. | typ. | max. _ Static ratings Drain-source Veryoss | 500 - - Vv Ks = OV breakdown voltage Ih =0,25mA Gate threshold voltage Vas ny 2,1 3,0 | 4,0 Ys = Vas I = 1mA Zero gate voltage loss - 20 260 pA 1 = 26C drain current - 100 | 1000 j= 125C Vog = 500V Veg = OV Gate-source leakage Tass - 10 100 nA Veg = 20V current Vog = OV Drain-source Fos (on) - 0,7 0,8 2 Veg = 10V on-resistance Ih = 55A Dynamic ratings Forward Gs 27 5,3 - s Vog = 25V transcanductance hh = 55A Input capacitance Css - 38 | 4,9 nF | Ms = OV Output capacitance Coss - |260 [400 [pF | Ms = 25V Reverse transfer Cras - 100. | 170 fos IMHz capacitance Turn-on time f,, fa (on) - 50 75 ns Veg = 30V (fon = ts (ony + fe) t _ 80 120 Ih = 2,8A Turn-off time ty t, _ 330 | 430 Ves = 10V (off) : Ags = 50Q (ot = tayo + 4) t - 110 | 140 Fast-recovery reverse dlode Continuous reverse Jon - - 7 A Tg = 25C drain current Pulsed reverse drain torus ~- - 28 current Diode forward on-voltage Veo - 1,3 1,6 Vv i = 2x Ibar Veg = OV, 7] = 25C Reverse recovery time t, - 180 | 250 |ns p= 25C | hk = hp [220 | 300 = 150C doar = Reserve recovery charge G., - 0,65 | 1,2 wo | 7 = 26C Va = HS - 2,6 5,0 = 150C | 100V Repetitive peak reverse Tan - - - A T= 25C current 15 _ = 150C | 2211 C-02 6298ad > = 3235605 pon4se20 5 ESIEG . g8d 14820 bo T 39-/3S BUZ 214 STEMENS AKTIENGESELLSCHAF Power dissipation Pp = f(T) Typical output characteristics Ip = #(Yps) parameter: 80 1s pulse test, 7) = 25C 100 5 Ww A 90 I Po D | 80 7 10 60 50 40 5 30 20 10 4aV 0 0 0 50 100 C 150 0 10 20 30 40 V 50 e Tr = Ns Safe operating area [py = f(Vps) Typical transfer characteristic [5 = (Ves) parameter: D = 0.01, Tg = 26C parameter: 80 1s pulse test, Vog = 26V, Tj = 26C 40? 15 : A I o 0 12 3 4 7 8 V Nesaad D ME 8235605 OOL4s2L 7 MMSIEG 88D 14921 bd Te3F-/3 SIEMENS AKTIENGESELLSCHAF BUZ 214 Typleal drain-source on-state resistance Drain-source on-state resistance Fos (on) = (Ip) Fos (on) = (7) parameter: Vgg; 7] = 25C parameter: Jp = 5,5A, Vag = 10V (spread) - 3 1.8 Q R OS(on} 16 Rostant 9V_10V_20V Typical transconductance g, = f(Jp) Gate threshold voitage Yasin) = (7}) parameter: 80 1s pulse test, parameter: Vog = Vag, Ib = mA Vpg = 25V, 7] = 25C (spread) 5 Vv Vesten) -50 0 50 100 C 150 631 1213 C-0468D D = 4235605 gouys2e 4 MMSIEG 88D 14922 0 T-39-/3 STEMENS AKTIENGESELLSCHAF Typlicat capacitances | G = ios) parameter: Veg = 0, f 10! nF 5 40 107 10? 0 10 20 3 =6VC O40 ~ Nos ee characteristic of reverse diode = parameter: Ty & = 80 us (spread P 10 A 5 Te 25C typ, he 1 | 150C i 10 25C {98%} 5 150C (98%) 10 10 0 o85 10 15 20 25 V30 %o 32 2 1214 c-0s Continuous drain current Ip = f(7o) parameter: Veg = 10 A 9 w & WN Laearene ne8a) D MM 8235605 0014923 0 MESIEG ssp 14923 ov T 34-/3 SIEMENS AKTIENGESELLSCHAF Transient thermal Impedance Zy4 = F(t) parameter: D = t,/T 15 5 10% 103? 5S 10% 5 10% 5 10 s 10! ~f Typleal gate-charge Vag = f (Qgate) parameter: Ip pus = 144A 15 Yes oy 0 20 40 60 80 100 = nC (120 ~ Gate 1215 C-06 BUZ 214