Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
1
PART OBSOLETE - USE AP3211 and AP5100
OBSOL E T E – PART D I S C ONT I N UED
General Description
The AP3211H is a 1.4MHz fixed frequency, current
mode, PWM buck (step-down) DC-DC converter,
capable of driving a 1.5A load with high efficiency,
excellent line and load regulation. The device
integrates N-channel power MOSFET switch with
low on-resistance. Current mode control provides fast
transient response and cycle-by-cycle current limit.
A standard series of inductors are available from
several different manufacturers optimized for use
with the AP3211H. This feature greatly simplifies the
design of switch-mode power supplies.
The AP3211H is available in SOT-23-6 package.
Features
• Input Voltage Range: 4.5V to 23V
• Fixed 1.4MHz Frequency
• High Efficiency: up to 92%
• Output Current: 1.5A
• Current Mode Control
• Built-in Over Current Protection
• Built-in Thermal Shutdown Function
• Built-in UVLO Function
• Built-in Over Voltage Protection
• Built-in Soft-start
Applications
• LCD TV
• DPF
• Portable DVD
Figure 1. Package Type of AP3211H
SOT-23-6
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
2
PART OBSOLETE - USE AP3211 and AP5100
OBSOL E T E – PART D I S C ONT I N UED
BS 1
2
3 4
5
Pin 1 Mark
6
GND
FB
SW
IN
EN
Pin Configuration
K Package
(SOT-23-6)
Figure 2. Pin Configuration of AP3211H (Top View)
Pin Description
Pin Number
Pin Name
Function
1
BS
Bootstrap pin. A bootstrap capacitor is connected between the
BS pin and SW pin. The voltage across the bootstrap
capacitor drives the internal high-side NMOS switch
2
GND
Ground pin
3
FB
Feedback pin. This pin is connected to an external resistor
divider to program the system output voltage. When VFB
exceeds 20% of the nominal regulation value of 0.81V, the
OVP is triggered. When VFB＜0.25V, the oscillator frequency
is lowered to realize short circuit protection
4
EN
Control input pin. Forcing this pin above 1.5V enables the IC.
Forcing this pin below 0.4V shuts down the IC. When the IC
is in shutdown mode, all functions are disabled to decrease
the supply current below 1A
5
IN
Supply input pin. A capacitor should be connected between
the IN pin and GND pin to keep the DC input voltage
constant
6
SW
Power switch output pin. This pin is connected to the inductor
and bootstrap capacitor
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
3
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Functional Block Diagram
REFERENCE
VOLTAGE
ERR AMP PWM
COMPARATOR
FB
GND
EN
VDD/VDD1
REGULATOR
IN
OSC
1.4MHz/
460KHz
RAMP
GENERATOR
VLIMIT
R
R
S
OSC
Q
SWITCH/LDO
SW
CS
CL
BOOSTRAP
REGULATOR
VREF BS
HICCUP
FB
CL SS
SS
2A/V
SCHOTTKY
1pF
220k27pF
5
2
4
3
6
1
3.3V
1M
Figure 3. Functional Block Diagram of AP3211H
Ordering Information
AP3211H -
Circuit Type G1: Green
Package
K: SOT-23-6
Package
Temperature
Range
Part Number
Marking ID
Packing
Type
SOT-23-6
-40 to 85C
AP3211HKTR-G1
GBK
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
TR: Tape & Reel
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
4
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Pin Voltage
VIN
-0.3 to 25
V
EN Pin Voltage
VEN
-0.3 to VIN+0.3
V
SW Pin Voltage
VSW
26
V
Bootstrap Pin Voltage
VBS
-0.3 to VSW+6
V
Feedback Pin Voltage
VFB
-0.3 to 6
V
Operating Junction Temperature
TJ
150
ºC
Storage Temperature
TSTG
-65 to 150
ºC
Lead Temperature
(Soldering, 10sec)
TLEAD
260
ºC
Thermal Resistance
(Junction to Ambient)
θJA
220
ºC/W
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
4.5
23
V
Operating Ambient Temperature
TA
-40
85
ºC
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
5
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Electrical Characteristics
VIN=VEN=12V, VOUT=3.3V, TA=25ºC , unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input Voltage
VIN
4.5
23
V
Quiescent Current
IQ
VFB=0.9V
0.8
1.1
mA
Shutdown Supply Current
ISHDN
VEN=0V
0.1
1.0
µA
Feedback Voltage
VFB
0.785
0.810
0.835
V
Feedback Over Voltage Threshold
VFBOV
0.972
V
Feedback Bias Current
IFB
VFB=0.85V
-0.1
0.1
µA
Switch On-resistance
RDSON
ISW=1A
0.385
Ω
Switch Leakage Current
ILEAK
VIN=23V,
VEN=0V
0.1
10
µA
Switch Current Limit
ILIM
1.8
2.4
A
EN Pin Threshold
VENH
1.5
V
VENL
0.4
Input UVLO Threshold
VUVLO
VIN Rising
3.3
3.8
4.3
V
Input UVLO Hysteresis
VHYS
0.2
V
Oscillator Frequency
fOSC1
1.1
1.4
1.7
MHz
fOSC2
Short Circuit
460
kHz
Max. Duty Cycle
DMAX
VFB=0.6V
90
%
Min. Duty Cycle
DMIN
VFB=0.9V
0
%
Minimum On Time
tON
100
ns
Thermal Shutdown
TOTSD
160
ºC
Thermal Shutdown Hysteresis
THYS
20
ºC
Soft-start Time
tSS
200
µs
Note 2: RDSON , tON, TOTSD, THYS and tSS are guaranteed by design.
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
6
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Typical Performance Characteristics
TA=25ºC , VIN=12V, VOUT=3.3V, unless otherwise noted.
Figure 4. Efficiency vs. Output Current Figure 5. Quiescent Current vs. Case Temperature
Figure 6. Feedback Voltage vs. Case Temperature Figure 7. Output Voltage vs. Output Current
0.01 0.1 1
0
10
20
30
40
50
60
70
80
90
100
Efficiency (%)
Output Current (A)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.68
0.72
0.76
0.80
0.84
0.88
0.92
0.96
1.00
Quiescent Current (mA)
Case Temperature (oC)
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.40
0.48
0.56
0.64
0.72
0.80
0.88
0.96
Feedback Voltage (V)
Case Temperature (oC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
3.12
3.16
3.20
3.24
3.28
3.32
3.36
3.40
Output Voltage (V)
Output Current (A)
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
7
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Typical Performance Characteristics (Continued)
TA=25ºC , VIN=12V, VOUT=3.3V, unless otherwise noted.
Figure 8. Output Ripple (IOUT=1.5A) Figure 9. Load Transient (IOUT=1A to 1.5A)
Figure 10. Enable Turn on Characteristic Figure 11. Enable Turn off Characteristic
VSW
(5V/div)
VOUT_AC
(10mV/div)
IL
(500mA/div)
Time (400ns/div)
VOUT_AC
(100mV/div)
Time (200s/div)
IOUT
(500mA/div)
VSW
(5V/div)
VEN
(5V/div)
VOUT
(2V/div)
Time (100s/div)
VSW
(5V/div)
VEN
(5V/div)
VOUT
(2V/div)
Time (40s/div)
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
8
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Typical Performance Characteristics (Continued)
TA=25ºC , VIN=12V, VOUT=3.3V, unless otherwise noted.
Figure 12. Short Circuit Protection (IOUT=1A) Figure 13. Short Circuit Recovery (IOUT=1A)
VSW
(5V/div)
VOUT
(2V/div)
IL
(1A/div)
Time (100s/div)
VSW
(5V/div)
VOUT
(2V/div)
IL
(1A/div)
Time (100s/div)
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
9
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Typical Application
R1
R2
49.9kΩ
16.2kΩ
IN
EN
BS
SW
FB
L1 4.7H
C1
10F
25V
VIN=12V
GND
CB
10nF
C2
22F
6.3V
D1
1
6
3
2
4
5
AP3211H
VOUT=3.3V
(1.5A)
ON OFF
Figure 14. Typical Application Circuit of AP3211H
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
10
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Mechanical Dimensions
SOT-23-6 Unit: mm(inch)
2.820(0.111)
3.100(0.122)
2.650(0.104)
3.000(0.118)
1.500(0.059)
1.700(0.067)
0.950(0.037)TYP
1.800(0.071)
2.000(0.079)
0.300(0.012)
0.500(0.020)
0.700(0.028)REF
0.100(0.004)
0.200(0.008)
0°
8°
0.200(0.008)
0.300(0.012)
0.600(0.024)
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051) 1.450(0.057)
MAX
1 2 3
4
5
6
Pin 1 Mark
Preliminary Datasheet
1.4MHz, 1.5A ASYNCHRONOUS DC-DC BUCK CONVERTER AP3211H
Jun. 2014 Rev. 2. 4 BCD Semiconductor Manufacturing Limited
11
PART OBSOLETE - USE AP3211 and AP5100
OB SOLET E – PA RT D ISCO NT IN UED
Mounting Pad Layout
SOT-23-6
E E
GZ
Y
X
Dimensions
Z
(mm)/(inch)
G
(mm)/(inch)
X
(mm)/(inch)
Y
(mm)/(inch)
E
(mm)/(inch)
Value
3.600/0.142
1.600/0.063
0.700/0.028
1.000/0.039
0.950/0.037
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yishan Road, Shanghai 200233, China
Tel: +021-6485-1491, Fax: +86-021-5450-0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203,Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District
Shenzhen 518057, China
Tel: +86-0755-8660-4900, Fax: +86-0755-8660-4958
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BCD Semiconductor (Taiwan) Company Limited
3F, No.17, Lane 171, Sec. 2, Jiu-Zong Rd., Nei-Hu Dist., Taipei(114), Taiwan, R.O.C
Tel: +886-2-2656 2808
Fax: +886-2-2656-2806/26562950
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BCD Semiconductor (Taiwan) Company Limited
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HsinChu City 300, Taiwan, R.O.C
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- Headquarters
BCD (Shanghai) Micro-electronics Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, P. R.C.
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