! $! Preferred Device " ) ( + (*+'& ) These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. * Fast trr, < 10 ns * Low CD, < 15 pF * Available in 8 mm Tape and Reel Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel. http://onsemi.com MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage M1MA151WAT1 Symbol Value Unit VR 40 Vdc M1MA152WAT1 Peak Reverse Voltage M1MA151WAT1 VRM Single Peak Forward Current Single IF SC-59 SUFFIX CASE 318D mAdc 100 mAdc 225 MARKING DIAGRAM 340 mAdc IFSM (Note 1) 500 Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 to + 150 C Dual 1 150 IFM Dual Single 2 Vdc 40 80 Dual Peak Forward Surge Current 3 80 M1MA152WAT1 Forward Current 0 xx M 750 THERMAL CHARACTERISTICS Rating 1. t = 1 SEC xx = MN for 151 MO for 152 M = Date Code ORDERING INFORMATION Device Package Shipping M1MA151WAT1 SC-59 3000 / Tape & Reel M1MA151WAT3 SC-59 10000 / Tape & Reel M1MA152WAT1 SC-59 3000 / Tape & Reel M1MA152WAT3 SC-59 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 January, 2004 - Rev. 8 690 Publication Order Number: M1MA151WAT1/D M1MA151WAT1, M1MA152WAT1 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA151WAT1 Symbol Condition Min Max Unit IR VR = 35 V -- 0.1 mAdc m VR = 75 V - 0.1 M1MA152WAT1 Forward Voltage Reverse Breakdown Voltage M1MA151WAT1 VF IF = 100 mA - 1.2 Vdc VR IR = 100 mA m 40 - Vdc 80 - CD VR = 0, f = 1.0 MHz - 15 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR - 10 ns M1MA152WAT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE ;< OUTPUT PULSE ;( ; ) ;<< ; = << = tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit http://onsemi.com 691 IF = 10 mA VR = 6 V RL = 100 W M1MA151WAT1, M1MA152WAT1 # @$ $ # ) ) : Figure 2. Forward Voltage Figure 3. Leakage Current ' () )) : # $ Figure 4. Capacitance http://onsemi.com 692 # $