Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 8 690 Publication Order Number:
M1MA151WAT1/D
!
$!
Preferred Device
" ) (+
(*+'& )
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
•Fast trr, < 10 ns
•Low CD, < 15 pF
•Available in 8 mm Tape and Reel
Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage M1MA151WAT1 VR40 Vdc
M1MA152WAT1 R80
Peak Reverse Voltage M1MA151WAT1 VRM 40 Vdc
M1MA152WAT1 RM 80
Forward Current Single IF100 mAdc
Dual F150
Peak Forward Current Single IFM 225 mAdc
Dual FM 340
Peak Forward Surge Single IFSM 500 mAdc
Current Dual IFSM
(Note 1) 750
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD200 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 to +150 °C
1. t = 1 SEC
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Preferred devices are recommended choices for future use
and best overall value.
SC−59
SUFFIX
CASE 318D
MARKING DIAGRAM
21
3
xx M
xx = MN for 151
MO for 152
M = Date Code
Device Package Shipping†
ORDERING INFORMATION
M1MA151WAT1 SC−59 3000 / Tape & Reel
M1MA151WAT3 SC−59 10000 / Tape & Reel
M1MA152WAT1 SC−59 3000 / Tape & Reel
M1MA152WAT3 SC−59 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M1MA151WAT1, M1MA152WAT1
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691
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA151WAT1 IRVR = 35 V —0.1 mAdc
M1MA152WAT1 RVR = 75 V −0.1
m
Forward Voltage VFIF = 100 mA −1.2 Vdc
Reverse Breakdown Voltage M1MA151WAT1 VRIR = 100 mA40 −Vdc
M1MA152WAT1 R R
m
80 −
Diode Capacitance CDVR = 0, f = 1.0 MHz −15 pF
Reverse Recovery Time (Figure 1) trr
(Note 2) IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR−10 ns
2. trr Test Circuit
tp = 2 ms
tr = 0.35 ns
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 1. Reverse Recovery Time Equivalent Test Circuit
M1MA151WAT1, M1MA152WAT1
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692
°
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
°
°
°
°
°
°
°
µ
