A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS IDS = 50 mA 65 V
IDSS VDS = 28 V VGS = 0 V 2.0 mA
IGSS VDS = 0 V VGS = 40 V 1.0 µA
VGS(th) ID = 50 mA VDS = 10 V 1.0 6.0 V
gfs ID = 2.0 A VDS = 10 V 1.8 2.2 mho
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 110
105
10
pF
PG
ηD VDD = 28 V IDQ = 50 mA Pout = 80 W
f = 150 MHz 11
55 13
60 dB
%
ψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER
RF POWER FET
N-Channel Enhancement Mode
MRF173
DESCRIPTION:
The ASI MRF173 is Designed for
wideband large-signal output and
driver stages up to 200 MHz frequency
range.
FEATURES:
• PG = 11 dB Min. at 150 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID 9.0 A
VDSS 65 V
VGS ±40 V
PDISS 220 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.8 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
S
S D
G
