7MBR50SB140 IGBT Modules
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Brake Inverter
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous Tc=25°C
Tc=75°C
1ms Tc=25°C
Tc=75°C
1 device
Continuous Tc=25°C
Tc=75°C
1ms Tc=25°C
Tc=75°C
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
1400
±20
75
50
150
100
50
360
1400
±20
35
25
70
50
180
1400
1600
50
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT MODULE (S series)
1400V / 50A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
tr(i)
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1400V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=800V
IC=50A
VGE=±15V
RG=24Ω
IF=50A chip
terminal
IF=50A
VCES=1400V, VGE=0V
VCE=0V, VGE=±20V
IC=25A, VGE=15V chip
terminal
VCC=800V
IC=25A
VGE=±15V
RG=51Ω
VR=1400V
IF=50A chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
1.0
0.2
8.5
2.8
1.2
0.6
1.0
0.3
3.4
0.35
1.0
0.2
2.8
1.2
0.6
1.0
0.3
1.0
1.5
1.0
6000
5.5 7.2
mA
µA
V
V
pF
µs
V
µs
mA
µA
V
µs
mA
V
mA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
With thermal compound
0.35
0.75
0.69 °C/W
0.50
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR50SB140
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
2.2
2.4
0.35
0.25
0.1
0.45
0.08
2.4
2.6
2.2
2.35
0.35
0.25
0.45
0.08
1.1
1.2
5000
465 495 520
3305 3375 3450
[Converter] 21(P)
23(N)
1(R) 2(S) 3(T)
[Brake] [Inverter]
22(P1)
7(B)
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
17(Ev)
4(U)
12(Gy)
5(V) 6(W)
16(Gw)
11(Gz) 10(En)
15(Ew)
89
[Thermistor]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR50SB140
Characteristics (Representative)
012345
0
20
40
60
80
100
120
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
20
40
60
80
100
120
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
20
40
60
80
100
120
Tj= 25°C Tj= 125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 25A
Ic= 50A
Ic= 100A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
20000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 100 200 300 400 500
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=50A, Tj= 25°C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR50SB140
020406080
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
020406080
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg= 24 ohm, Tj= 125°C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10 50 100 500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=50A, VGE=±15V, Tj= 25°C
Gate resistance : Rg [ ohm ]
Switching time : ton, tr, toff, tf [ nsec ]
0 20406080100
0
2
4
6
8
10
12
14
16
18
20
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=800V, VGE=±15V, Rg=24 ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10 50 100 500
0
10
20
30
40
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=800V, Ic=50A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400 1600
0
20
40
60
80
100
120
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>24 ohm, Tj=<125°C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR50SB140
01234
0
20
40
60
80
100
120
Tj=25°C
Tj=125°C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0 20406080
10
100
300
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=800V, VGE=±15V, Rg=24 ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
20
40
60
80
100
120
Tj= 25°C Tj= 125°C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forward current : IF [ A ]
0.001 0.01 0.1 1
0.01
0.1
1
3
IGBT[Brake]
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD[Inverter]
Conv. Diode
IGBT[Inverter]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ °C ]
Resistance : R [ k ohm ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR50SB140
012345
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
10
20
30
40
50
60
8V
10V
12V
15V
VGE= 20V
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
10
20
30
40
50
60
Tj= 25°C Tj= 125°C
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 12.5A
Ic= 25A
Ic= 50A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 150 200 250
0
200
400
600
800
1000
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=25A, Tj= 25°C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR50SB140
Outline Drawings, mm
mass : 260g
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
