53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
TF252TH
N-Channel JFET
20V, 140 to 350μA, 1.4mS, VTFP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering number : ENA0842A
Features
• High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
•
Ultrasmall package facilitates miniaturization in end products
•
Best suited for use in electret condenser microphone for audio equipments and telephones
•
Excellent voltage characteristics
•
Excellent transient characteristics
•
Adoption of FBET process
•
Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage VGDO --20 V
Gate Current IG10 mA
Drain Current ID1mA
Allowable Power Dissipation PD100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7031A-001
Product & Package Information
• Package : VTFP
• JEITA, JEDEC : SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
1 : Drain
2 : Source
3 : Gate
VTFP
1
3
12
2
3
1.4
1.2
0.8
0.34
0.07 0.07 0.2 0.2
0.25
0.2
0.45
0.1
0 to 0.02
TL
TF252TH-4-TL-H
TF252TH-5-TL-H
1
3
2
LOT No.
LOT No.
D
RANK
TF252TH
No. A0842-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V
Cutoff Voltage VGS(off) VDS=2V, ID=1μA --0.1 --0.4 --1.0 V
Drain Current IDSS VDS=2V, VGS=0V 140* 350* μA
Forward Transfer Admittance | yfs |VDS=2V, VGS=0V, f=1kHz 0.8 1.4 mS
Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF
Reverse Transfer Capacitance Crss 0.95 pF
[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specifi ed Test Circuit.]
Voltage Gain GVVIN=10mV, f=1kHz 1.0 dB
Reduced Voltage Characteristic ΔGVV
VIN=10mV, f=1kHz, VCC=2.0V → 1.5V
--0.6 --2.0 dB
Frequency Characteristic ΔGvf f=1kHz to 110Hz --1.0 dB
Total Harmonic Distortion THD VIN=30mV, f=1kHz 0.65 %
Output Noise Voltage VNO VIN=0V, A curve --106 --102 dB
* : The TF252TH is classifi ed by IDSS as follows : (unit : μA)
Rank 4 5
IDSS 140 to 240 210 to 350
Test Circuit
Ordering Information
Device Package Shipping memo
TF252TH-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free
TF252TH-5-TL-H VTFP 8,000pcs./reel
OSC
5pF +
33μF
2.2kΩVCC=2V
VCC=1.5V
V
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
TF252TH
No. A0842-3/7
ID -- VDS ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- μA
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- μA
0 0.5 2.01.0 1.5
300
200
250
100
50
150
0
IT12440
VGS=0V
--0.10V
--0.15V
--0.05V
--0.20V
--0.30V
--0.25V
IT12441
01 5234
350
300
200
250
100
50
150
0
VGS=0V
--0.1V
--0.2V
--0.4V
--0.3V
VGS(off) -- IDSS
| yfs | -- IDSS
Ciss -- VDS Crss -- VDS
Zero-Gate Voltage Drain Current, IDSS -- μA
Forward T ransfer Admittance, | yfs | -- mS
Zero-Gate Voltage Drain Current, IDSS -- μA
Cutoff Voltage, VGS(off) -- V
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Drain-to-Source Voltage, VDS -- V
ID -- VGS
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- μA
--0.20
--0.25
--0.30
--0.35
--0.40
--0.55
--0.50
--0.45
--0.60 VDS=2V
ID=1μA
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
100 150 200 250 300 400350
IT12444
100 150 200 250 300 400350
IT12445
VDS=2V
VGS=0V
f=1kHz
10
7
5
3
2
1.0 1.0 10
23 577523
IT12446
VGS=0V
f=1MHz
IT12447
1.0
7
5
3
3
2
1.0 10
23 577523
VGS=0V
f=1MHz
400
300
200
100
0
IT12442 IT12443
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
IDSS=350μA
250μA
150μA
350
250
50
150
VDS=2V 400
300
200
100
0
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
Ta=75°C
25°C
--25°C
350
250
50
150
VDS=2V
Reverse Transfer Capacitance, Crss -- pF
TF252TH
No. A0842-4/7
GV -- IDSS ΔGVV -- IDSS
Zero-Gate Voltage Drain Current, IDSS -- μA
Voltage Gain, GV -- dB
Zero-Gate Voltage Drain Current, IDSS -- μA
Reduced Voltage Characteristic, ΔGVV -- dB
IT12448
--1.0
--0.8
--0.6
--0.4
--0.2
--0.9
--0.7
--0.5
--0.3
--0.4
--0.2
0
0.4
0.8
1.2
0.2
0.6
1.0
1.8
1.6
1.4
100 150 200 250 300 400350
IT12449
100 150 200 250 300 400350
GV : VCC=2V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
ΔGVV : VCC=2V→1.5V
V
IN=10mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
PD -- Ta
Ambient Temperature, T a -- °C
Allowable Power Dissipation, PD -- mW
THD -- VIN
Input Voltage, VIN -- mV
Total Harmonic Distortion, THD -- %
THD -- IDSS
Zero-Gate Voltage Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
10
2
3
5
7
2
2
3
5
7
1.0
0.1 0 50 100 150 200
IT12450
100 150 200 250 300 400350
250
μ
A
350μA
IDSS=150μA
0
IT12451
0.2
0.4
0.6
1.0
0.8
1.2
1.4 THD : VCC=2V
V
IN=30mV
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
THD : VCC=2V
f=1kHz
R
L=2.2kΩ
Cin=5pF
IDSS : VDS=2V
100
120
80
60
40
20
00 20 40 60 80 100 120 140 160
IT12453
TF252TH
No. A0842-5/7
Taping Specifi cation
TF252TH-4-TL-H, TF252TH-5-TL-H
TF252TH
No. A0842-6/7
Outline Drawing Land Pattern Example
TF252TH-4-TL-H, TF252TH-5-TL-H
Mass (g) Unit
mm Unit: mm
0.0012
* For reference
0.5
0.4
0.45 0.45
0.45 0.45
1.1
TF252TH
PS No. A0842-7/7
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