VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 1Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY99445DS is an
infrared, 940 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 42 mil
chip provides outstanding radiant intensity and allows
DC operation of the device up to 1 A. Superior ESD
characteristics are ensured by an integrated Zener diode.
FEATURES
Package type: surface mount
Double stack technology
Package form: high power SMD with lens
Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
Peak wavelength: λp = 940 nm
Zener diode for ESD protection up to 2 kV
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 45°
Designed for high drive currents: up to 1 A (DC) and up
to 5 A pulses
Low thermal resistance: RthJP = 10 K/W
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Infrared illumination for CMOS cameras (CCTV)
Illumination for cameras (3D gaming)
Machine vision
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY99445DS 500 ± 45 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY99445DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF1A
Peak forward current tp/T = 0.5, tp = 100 μs IFM 2A
Surge forward current tp = 100 μs IFSM 5A
Power dissipation PV3.4 W
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature According to fig. 10, J-STD-20 Tsd 260 °C
Thermal resistance junction / pin According to J-STD-051, soldered on PCB RthJP 10 K/W
VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 2Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20406080100
PV- Power Dissipation (W)
Tamb - Ambient Temperature (°C)
RthJA = 10 K/W
0
0.2
0.4
0.6
0.8
1.0
0 20406080100
IF- Forward Current (A)
Tamb - Ambient Temperature (°C)
RthJA = 10 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A, tp = 20 ms VF-2.93.4V
IF = 5 A, tp = 100 μs VF-4.6-V
Temperature coefficient of VFIF = 1 A TKVF --2.5-mV/K
Reverse current VR = 5 V IRNot designed for reverse operation μA
Radiant intensity IF = 1 A, tp = 20 ms Ie320 500 900 mW/sr
IF = 5 A, tp = 100 μs Ie-2790-mW/sr
Radiant power IF = 1 A, tp = 20 ms φe-935-mW
Temperature coefficient of φeIF = 1 A TKφe- -0.2 - %/K
Angle of half intensity ϕ 45-deg
Peak wavelength IF = 1 A λp920 940 960 nm
Spectral bandwidth IF = 1 A Δλ -50-nm
Temperature coefficient of λpIF = 1 A TKλp-0.3-nm/K
Rise time IF = 1 A tr-15-ns
Fall time IF = 1 A tf-18-ns
VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 3Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
0.1
1
10
12345
IF- Forward Current (A)
VF- Forward Voltage (V)
tp= 100 μs
2.60
2.80
3.00
3.20
3.40
3.60
-60 -40 -20 0 20 40 60 80 100
VF- Forward Voltage (V)
Tamb - Ambient Temperature (°C)
IF= 1.0 A
tp= 20 ms
90
95
100
105
110
115
-60 -40 -20 0 20 40 60 80 100
VF, rel - Relative Forward Voltage (%)
Tamb - Ambient Temperature (°C)
IF= 1.0 A
tp= 20 ms
100
1000
10 000
100 1000 10 000
Ie- Radiant Intensity (mW/sr)
IF- Forward Current (mA)
tp= 100 μs
80
85
90
95
100
105
110
-60 -40 -20 0 20 40 60 80 100
Ie, rel - Relative Radiant Intensity (%)
Tamb - Ambient Temperature (°C)
IF= 1.0 A
tp= 20 ms
0
10
20
30
40
50
60
70
80
90
100
800 850 900 950 1000 1050
Ie, rel - Relative Radiant Intensity (%)
λ- Wavelength (nm)
IF= 1.0 A
VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 4Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
TAPING DIMENSIONS in millimeters
Notes
Empty component pockets sealed with top cover tape.
7 inch reel - 600 pieces per reel.
The maximum number of consecutive missing lamps is two.
In accordance with ANSI/EIA 481-1-A-1994 specifications.
Ie, rel - Relative Radiant Intensity
0.6
80°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ - Angular Displacement
4.00 ± 0.10
8.00 ± 0.10
12.00 + 0.30
- 0.10
2.00 ± 0.05
1.75 ± 0.10
5.50 ± 0.05
Ø 1.50 + 0.10
Ø 1.50 + 0.25
Cathode
VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 5Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Notes
Tolerance is ± 0.10 mm (0.004") unless otherwise noted.
Specifications are subject to change without notice.
VSMY99445DS
www.vishay.com Vishay Semiconductors
Rev. 1.0, 12-Feb-16 6Document Number: 84249
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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