P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors DO-214AC (SMA) Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V Peak Pulse Power 400W d * e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50) 0.094 MAX. (2.38 MAX.) 0.157 (3.99) Dimensions in inches and (millimeters) 0.012 (0.305) 0.006 (0.152) 0.052 MIN. (1.32 MIN.) 0.090 (2.29) 0.220 (5.58) REF 0.078 (1.98) Features 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Mechanical Data Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. High temperature soldering guaranteed: 250C/10 seconds at terminals. Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting Position: Any Weight: 0.002oz., 0.064g Packaging Codes - Options (Antistatic): 51 - 1K per Bulk box, 20K/carton 61 - 1.8K per 7" plastic Reel (12mm tape), 36K/carton 5A - 7.5K per 13" plastic Reel (12mm tape), 75K/carton * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Optimized for LAN protection applications * Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) * Ideal for EFT protection of data lines in accordance with IEC1000-4-4 (IEC801-4) * Low profile package with built-in strain relief for surface mounted applications * Glass passivated junction * Low incremental surge resistance, excellent clamping capability * 400W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.01% (300W above 91V) * Very Fast response time * Voltages above 220V available Q3-2002 Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit PPPM 400 W IPPM See Next Table A PM(AV) 1.0 W Peak forward surge current 8.3ms single half sine-wave uni-directional only (2) IFSM 40 A Thermal resistance junction to ambient air (3) RJA 120 C/W Thermal resistance junction to leads RJL 30 C/W TJ, TSTG -65 to +150 C (1)(2) Peak power dissipation with a 10/1000s waveform (1) Peak pulse current with a 10/1000s waveform (Fig. 1) (Fig. 3) Power dissipation on infinite heatsink, TA = 50C Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2. Rating is 300W above 91V. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88367 18-Jul-02 www.vishay.com 1 P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. V F General Semiconductor Part Number P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA11A P4SMA12A P4SMA13A P4SMA15A P4SMA16A P4SMA18A P4SMA20A P4SMA22A P4SMA24A P4SMA27A P4SMA30A P4SMA33A P4SMA36A P4SMA39A P4SMA43A P4SMA47A P4SMA51A P4SMA56A P4SMA62A P4SMA68A P4SMA75A P4SMA82A P4SMA91A P4SMA100A P4SMA110A P4SMA120A P4SMA130A P4SMA150A P4SMA160A P4SMA170A P4SMA180A P4SMA200A P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA540A Notes: (1) (2) (3) (4) Device Marking Code Breakdown Voltage V(BR) at IT (1) (V) UNI BI Min Max Test Current IT (mA) 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C -- -- -- -- -- -- -- -- 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID(4) (A) 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 = 3.5V at IF = 25A (uni-directional only) Maximum Maximum Maximum Peak Pulse Clamping Temp. Current Voltage at Coefficient (2) IPPM IPPM of V(BR) (A) VC (V) (% / C) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.9 0.87 0.73 0.62 0.55 0.50 0.46 0.43 0.41 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 104 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.089 0.090 0.092 0.09 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.106 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Pulse test: tp 50ms Surge current waveform per Fig. 3 and derate per Fig. 2 All terms and symbols are consistent with ANSI/IEEE CA62.35 For bidirectional types with VR 10 Volts and less, the ID limit is doubled www.vishay.com 2 Document Number 88367 18-Jul-02 P4SMA6.8A Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % Fig. 1 - Peak Pulse Power Rating Curve PPPM -- Peak Pulse Power (kW) 100 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25C 10 P4SMA100A -P4SMA220A P4SMA6.8A -P4SMA91A 1 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0.1 0.1s 1.0s 10s 100s 1.0ms 100 75 50 25 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 10ms 0 td -- Pulse Width (sec.) 75 100 125 150 175 200 Fig. 4 - Typical Junction Capacitance Fig. 3 - Pulse Waveform 10,000 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. Peak Value IPPM 100 CJ -- Junction Capacitance (pF) IPPM -- Peak Pulse Current, % IRSM 50 TA -- Ambient Temperature (C) 150 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. TJ = 25C f = 1.0MHz Vsig = 50mVp-p Measured at Stand-Off Voltage, VWM 1,000 Uni-Directional 100 Bi-Directional td 0 10 1.0 0 3.0 2.0 1 4.0 IFSM -- Peak Forward Surge Current (A) 1000 100 10 0.01 0.1 1 10 tp -- Pulse Duration (sec) Document Number 88367 18-Jul-02 100 200 Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Fig. 5 - Typical Transient Thermal Impedance 1 0.001 10 V(BR) -- Breakdown Voltage (V) t -- Time (ms) Transient Thermal Impedance (C/W) 25 100 1000 200 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 100 50 10 1 5 10 50 100 Number of Cycles at 60 Hz www.vishay.com 3