- FAIRCHILD SEMICONDUCTOR a4 DE ff 34e5n74 HOer?4ee 3 I 3469674 FAIRCHILD SEMICONDUCTOR 84D 27422 D PN/MPS/FTSO3638 7~37- =~ PN/MPS/FTSO3638A PNP Small Signal General Purpose Amplifiers & Switches FAIRCHILD A Schlumberger Company Vceo ... -25 V (Min) PACKAGE hre ... 30 (Min) (PN/MPS/FTSO3638), PN3638 TO-92 100 (Min) (PN/MPS/FTSO3638A) @ 50 mA PN3638A TO-92 ton ... 75 ns (Max) @ 300 mA; ton ... 170 ns (Max) @ 300 mA MPS3638 TO-92 . Complements ... PN3641, PN3643 MPS3638A TO-92 i FTSO3638 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO3638A TO-236AA/AB Temperatures Storage Temperature ~55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO 25C Ambient Temperature 0.625 W 0.350 W* 25C Case Temperature 1.0 W Voltages & Currents Veeco Collector to Emitter Voltage 25V (Note 4) Vcao Gollector to Base Voltage 25V Vces Collector to Emitter Voltage -25V Veso Emitter to Base Voltage 4.0V le Collector Current (Note 2) 500 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 8638 3638A SYMBOL| CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS | BVces Collector to Emitter Breakdown| 25 25 Vv Ic = 100 pA, Vee = 0, Voltage BVcso Collector to Base Breakdown | 25 25 Vv Ic = 100 uA, Vez = 0 Voltage BVeso Emitter to Base Breakdown |4.0 4.0 Vv le = 100 pA, Ie =0 Voltage lees Collector Reverse Current 35 35 nA Vee = 15 V, Vaz = 0 2.0 2.0 pA Voe =-15 V, Vee = 0, Ta = 65C NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO0-92) junction-to-case thermal resistance of 125 C/W (derating factor of 80 mWP C), junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW? C). - 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T212. "Package mounted on $9,5% alumina 8 mm x 8 mm x 0.6 mm.FAIRCHILD SEMICONDUCTOR IRCHILD SEM ay pe ayesu7y ooazu2a5 ICONDUCTOR PN/MPS/FTSO3638 PN/MPS/FTSO3638A 84D 27423 D T- 37-157 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3638 3638A SYMBOL| CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS hee DC Pulse Current Gain (Note 5) (MPS3638) 20 lo = 10 MA, Vee = -10 V 100 lo = 10 mA, Vee = -10 V 80 lc = 1.0 MA, Vee = -10 V 30 100 Ic = 50 MA, Voce = 1.0 V 20 20 Ig = 300 mA, Vee =-2.0 V : Vceotsus) | Collector to Emitter Sustaining | -25 -25 Vv lc = 10 mA, lp =O - Voltage (Notes 4 & 5) Veetsat) Collector to Emitter Saturation ~0.25 0.25 Vv lc = 50 mA, Ie = 2.6 mA1 Voltage (Pulsed) (Note 5) 1.0 1.0 Vv Ig = 300 mA, Ip = 30 mA Vacisat Base to Emitter Saturation -1.1 1.4 Vv lo = 50 mA, Ip = 2.5 MA Voltage (Note 5) 0.8 | -2.0 | -0.8 | -2.0 Vv Ic = 300 mA, Is = 30 mA Cob Common Base Open Circuit, 20 10 pF Vos =10V, le =0, f=140kHz Output Capacitance Cib Common Base Open Circuit, Input Capacitance (PN363BA) 35 pF Ves = 0.5 V, lo =0, f=140 KHz (MPS3638A) 65 25 pF Ven = 0.5 V, Ic =0, f=140 kHz hte Magnitude of Small Signal 1.0 1.5 lc = 50 mA, Vce = -3.0 V, Current Gain f = 100 MHz Ne Smail Signal Current Gain (PN3638) 25 lc = 10 MA, Vee = -10 V, f = 1.0 kHz (MPS3638) 25 180 lg = 10 MA, Vee = 10V, f =1.0 kHz 100 lc = 10 mA, Voce = -10 V, f = 1.0 kHz hie Input Resistance 2000 2000 2 lo = 10 MA, Voce = 10 V, (MPS3638) 1500 a f = 1.0 kHz Noe Output Conductance 1200 4200 | pmhos | tc = 10 mA, Vce = -10 V, : f = 1.0 kHz Nre Voltage Feedback Ratio 2600 1500 | x10- | |, =10mMA, Vee =10V, f = 1.0 kHz ton Turn On Time 75 75 ns lc = 300 MA, lai ~ 30 MA, (test circuit no. 536) Veo = 10V tott Turn Off Time 170 170 ns ic 300 mA, Ibi Ia2 * 30 MA, (test circuit no. 536) _ Vec = 10 V 3-143 veerFAIRCHILD SEMICONDUCTOR ay DE sye5e7y ooezy2y 7 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27424 D =m PN/MPS/FTSO3639 PN/MPS/FTSO3640 PNP High Speed Saturated Logic Vceo ... 12 V (Min) (PN/MPS3640) PACKAGE tn... 25ns (Max) @ 50 mA, 60 ns (Max) @ 10 mA; PN3639 TO-92 tox ... 35 ns (Max) @ 50 mA, 75 ns (Max) @ 10 mA PN3640 TO-92 Complements ... PN4274, 2N5769 MPS3639 TO-92 MPS3640 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 4) FTSO3639 TO-236AA/AB FTSO3640 TO-236AA/AB Temperatures Storage Temperature -55 C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at PN/MPS FTSO 25 C Ambient Temperature 0.625 W 0.350 W* 25 C Case Temperature 1.0W Voltages & Currents 3639 3640 Vceo Collector to Emitter Voltage -6V -12V (Note 4) Vceo Collector to Base Voltage -6V 12V Veso Emitter to Base Voltage -4.0V -4.0V Io Collector Current 80 mA 80 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) PN3639 PN3640 SYMBOL} CHARACTERISTIC MIN MAX | MIN MAX } UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown} -6.0 12.0 Vv Ic = 100 pA, Var = 0 Voltage BVcso Collector to Base Breakdown =| -6.0 -12.0 Vv Io = 100 pA, le = 0 . Voltage BVeeo Emitter to Base Breakdown ~4.0 -4,0 Vv le = 100 pA, Io = 0 Voltage ; Ices Collector Reverse Current 50 nA | Vce = 3.0 V, Vaz = 0 50 nA Voce = -6.0 V, Vee = 0 1.0 BA | Voce =3.0V, Vee =0, Ta = 65C 1.0 pA Vor =-6.0V, Vee =0, Ta=65C hre DC Pulse Current Gain 30. {120 | 30 420 Io = 10 mA, Vee = -0.3 V (Note 5) 20 20 Ic = 50 mA, Vee = -1.0 V NOTES: 1. 2. 3. "Om These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance ot 125 C/W (derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/* C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 28 mW/ C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: tength = 300 ys; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. lc eee ae . 3-144FAIRCHILD SEMICONDUCTOR ay DEB syesu74 ooe74es 4 TU 3469674 FAIRCHILD SEMICONDUCTOR . 84D 27425 D ween PN/MPS/FTSO3639 PN/MPS/FTSO3640 T< 39-7<" ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) PN3639 PN3640 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS Veeosus | Collector to Emitter Sustaining | ~6.0 -12 Vv lo = 10 mA, Is =0 Voltage (Note 5) Veetsatt Collector to Emitter Saturation 0.16 0.2 Vv lo = 10 mA, la = 1.0 mA Voltage (Note 4) -0.5 -0.6 Vv lc = 50 mA, la = 5.0 MA 0.25 0.3 Vv ic = 10 mA, Ib = 0.5 mA ~0.23 0,25 Vv Io = 10 mA, ls = 1.0 mA, Ta = 66C Vectsatt Base to Emitter Saturation 0.75} -0.95 |-0.75 | -0.95 V Io = 10 mA, lp = 0.5 MA Voltage (Note 5) -0.8 | 1.0 |-0.8 | -1.0 Vv Ic = 10 mA, Isp = 1.0 MA 1.6 15 Vv Ic =50 mA, bb = 5.0 mA Cob Output Capacitance 3.5 3.5 pF Vea =5.0V, le=0, f=140kKHz 5.5 5.5 pF Ves = 0, le = 0, f = 140 kHz Cin Input Capacitance 3.5 3.5 pF Ves = 0.5 V, lc =0, f =140 kHz hte High Frequency Current Gain | 3.0 3.0 lo = 10 mA, Vea = 0, f = 100 MHz 5.0 5.0 Ie = 10 MA, Vce = 5.0 V, f = 100 MHz Ts Storage Time 30 50 ns Ic = 10 mA, lar = lp2 = 10 mA, (test circuit no. 234) Veco = 3.0 V ton Turn On Time 25 25 ns Ic = 50 mA, Ip: = 5.0 mA, {test circuit no. 235) Vec = 6.0 V (test circuit no. 219) 60 60 ns Io = 10 mA, Ia: = 0.5 mA, Veco = -1.5V tot Turn Off Time 25 35 ns Ic = 50 mA, lei = lao ~5.0mA, (test circuit no. 235) Veco = 6.0 V (test circuit no. 219) 60 75 ns Ic ~ 10 MA, lai = Ine ~ 0.5 mA, Veco = 1.5 V MPS3639 MPS3640 SYMBOL] CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVces Collector to Emitter Breakdown] 6.0 -12.0 Vv Ic = 100 vA, Vee = 0 Voltage BVceo Collector to Base Breakdown | -6.0 -12.0 Vv lo = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown -4.0 4.0 Vv le = 100 pA, le =0 Voltage ; Ices Collector Reverse Current 10 nA Voce = 3.0 V, Vee = 0 10 nA Voce =-6.0 Vv, Vee =0 1.0 pA Voce =-3.0V, Vee =0, Ta=65 C 10 pA Vee = -6.0V, Vee =0, Ta=68 CFAIRCHILD SEMICONDUCTOR | ay DE a4e5e74 avez, oO i PN/MPS/FTSO3639 PN/MPS/FTSO3640 7+ 37-/5 MPS3639 MPS3640 SYMBOL | CHARACTERISTIC MIN MAX |MIN MAX | UNITS TEST CONDITIONS Hee DC Pulse Current Gain 30 120 30 120 Io = 10 mA, Vee = -0.3 V (Note 5) 20 20 le = 50 mA, Vce = -1.0 V Veeotus: | Collector to Emitter Sustaining) 6.0 12 Vv le = 10 mA, Ip = 0 Voltage (Note 5) Veetsat Coilector to Emitter Saturation 0.16 ~0.2 Vv lo =10 mA, lk = 1.0 mA Voltage (Note 5) -0.5 -0.6 Vv Ic = 50 mA, Is = 5.0 mA 0.23 ~0.25 Vv Ic = 10 mA, Ip = 1.0 mA, Ta = 65C Veetsat Base to Emitter Saturation ~0,75| 0.95 | -0.75| -0.95 Vv Io = 10 mA, Ip = 0.5 MA Voltage (Note 5) 0.8} -1.0 | -0.8 | 1.0 Vv Ie = 10 mA, Ip = 1.0 MA 15 1.5 Vv lo = 50 mA, fs = 5.0 MA Cob Output Capacitance 3.5 3.6 pF Ves = -5.0V, le =0, f= 140 kHz Cr Input Capacitance 3.6 3.5 pF Ves =-0.5 V, lo =0, f= 140 kHz hte High Frequency Current Gain | 3.0 lc =10 MA, Ves = 0, f = 100 MHz 5.0 5.0 co =10mMA, Vez = 5.0, f = 100 MHz ton Turn On Time 25 25 ns Ic = 50 mA, Iai = 5.0 mA, (test circuit no. 235) Veo = 6.0 V (test circuit no. 219) 60 60 ns Ic = 10 mA, lai = 0.5 mA, Veo = -1.5 V tott Turn Off Time 25 35 ns Ic = 50 mA, Ist = laz 5.0 mA, (test circuit no. 235) Voc = -6.0 V (test circuit no. 219) 60 75 ns Io = 10 MA, lei = la2=0.5 mA, Voc =15VBFAIRCHILD SEMICONDUCTOR P54R9b74 OOe74e? 2 3469674 FAIRCHILD SEMICONDUCTOR 84D 27427 D a a PN3641/FTSO3641 77-3 PN3642/FTSO3642 PN3643/FTSO3643 NPN General Purpose Small Signal G4 DE FAIRG rill A Schlumberger Company Amplifiers Veco .-. 30 V (Min) (PN/FTSO3641, PN/FTSO3643), PACKAGE 45 V (Min) (PN/FTSO3642) PN3641 TO-92 fire ... 100 (Min) @ 150 mA, 25 (Min) @ S00 mA PN3642 TO-92 (PN/FTSO3643) PN3643 TO-92 @ Pg... 400 mW RF Power Out at 30 MHz FTSO3641 TO-236AA/AB e fr... 250 MHz (Min) (PN3643) FTSO3642 TO-236AA/AB ton... 6Ons (Max) @ 300 MA, tor ... 150 ns (Max) @ 300 mA FTSO3643 TO-236AA/AB Complements ... MPS3636/A, PN3644 et ae ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150C Operating Junction Temperature 450 C Power Dissipation (Notes 2 & 3) Total Dissipation at PN FTSO 25C Ambient Temperature 0.625 W 0.350 W* 26C Case Temperature 10W Voltages & Currents 3641/3 3642 Vceo Collector to Emitter Voltage 30 V 45V (Note 4) Vcso Collector to Base Voltage 60 V 60 V Vewo Emitter to Base Voltage 5.0V 5.0 V le Collector Current 500 mA 500 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3641 3642 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX | UNITS TEST CONDITIONS BVeeotuss | Collector to Emitter Breakdown} 30 45 Vv le = 10 mA, ls =O Voltage (Notes 4 & 5) BVces Collector to Emitter Breakdown} 60 60 Vv le = 10 pA, Vee = 0 : Voltage : BVcso Collector to Base Breakdown 60 60 V lo = 10 pA, le =0 : Voltage i BVeso Emitter to Base Breakdown 5.0 5.0 Vv le = 10 vA, lc = 0 Voltage , NOTES: 1. These ratings are fimiting values above which the serviceability of any Individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 CAV (derating factor of 8.0 mW/? G); junction-to-ambient thermal resistance of 200 CW (derating factor of 6.0 mW/? C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/C). Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ps; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T145. * Package mounted on 99.5% alumina 8 mm x 8&8 mm x 0.6 mm, > 3-147y FAIRCHILD SEMICONDUCTOR 44 DEB S4b9b?4 OOer?4ed 4 3469674 FAIRCHILD SEMICONDUCTOR 84D 27428 D soz PN3641/FTSO3641 PN3642/FTSO3642 T-24.a3 PN3643/FTSO3643 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3641 3642 SYMBOL | CHARACTERISTIC MIN MAX} MIN MAX | UNITS TEST CONDITIONS Ices Collector Cutoff Current 50 50 nA | Vce = 50 V, Vee = 0 (Note 5) 1.0 1.0 pA Voce = 50 V, Vee = 0, Ta = 65C hre DC Pulse Current Gain (Note 5)} 40 120 |; 40 120 Ic = 150 mA, Vee = 10 V 15 15 Ic = 500 mA, Voce = 10 V Veetsan Collector to Emitter Saturation 0.22 0.22 Vv Ie = 150 mA, ls = 15 MA Voltage (Note 5) Cop Output Capacitance 8.0 8.0 pF Vos = 10V, le =0, f= 140 kHz Ate Magnitude of Common Emitter,| 1.5 15 lc = 50 mA, Vee = 5.0 V, Short Circuit Small Signal f = 100 MHz Current Gain Gre Amplifier Power Gain 10 10 dB (Zero Signal) Vee = 15 V, (test circuit no. 238) lc = 0, Ra = 140 0, Ri = 260 2, f = 30 MHz, Pin = 40 mW n Collector Efficiency 60 60 % (Zero Signal) Vce = 15 V, (test circuit no. 238) lo = 0, Ra = 1409, Re = 260 2, f = 30 MHz, Pin = 40 mW ton Turn On Time 60 60 ns fc = 300 mA, Iai = 30 mA, (test circuit no. 241) tott Turn Off Time 150 150 ns Ico = 300 mA, |p1 = lee = 30MA (test circuit no. 242) 3643 SYMBOL| CHARACTERISTIC MIN MAX | UNITS TEST CONDITIONS BVceoisus) | Collector to Emitter Breakdown 30 Vv Ic = 10 mA, Ip = 0 Voltage (Notes 4 & 5) BVces Collector to Emitter Breakdown 60 Vv lc = 10 pA, Vee = 0 Voltage BV cso Collector to Base Breakdown 60 Vv Ic = 10 vA, le =O Voltage BVeso Emitter to Base Breakdown Voltage 5.0 Vv le = 10 A, Ic =O Ices Collector Cutoff Current (Note 5) 50 nA Vce = 50 V, Vee = 0 1.0 pA Vce = 50 V, Vee = 0, Ta = 66C hee DC Pulse Current Gain (Note 5) 100 | 300 Ic = 150 mA, Vee = 10 V 25 Ic = 500 mA, Vee = 10V Veetsan Collector to Emitter Saturation 0.22 Vv Ic = 150 mA, la = 15 MA Voltage (Note 5) OEE SSH ST EE 3-148_ FAIRCHILD SEMICONDUCTOR 3469674 FAIRCHILD SEMICONDUCTOR &y S4YBA674 OO27424 &b 84D 27429 D ee esr PN3641/FTSO3641 PN3642/FTS03642 [- 2.23 PN3643/FTS03643 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3643 SYMBOL] CHARACTERISTIC MIN MAX } UNITS TEST CONDITIONS Cob Output Capacitance 8.0 pF Vop = 10 V, le = 0, f = 140 kHz Nite Magnitude of Common Emitter, 2.5 lc = 50 mA, Vce = 5.0 V, Short Circuit Small Signai f = 100 MHz Current Gain Gre Amplifier Power Gain 10 dB | (Zero Signal) Vce = 15 V, (test circuit no. 238) lo = 0, Re = 140 9, Ri = 260 0, f = 30 MHz, Pin = 40 mW 0 Collector Efficiency 60 % (Zero Signal) Vce = 15 V, (test circuit no. 238) Ie = 0, Re = 140 9, Ri = 260 0, f = 30 MHz, Pin = 40 mW ton Turn On Time 60 ns lc = 300 mA, In: ~ 30 mA, (test circuit no. 241) tott Turn Off Time 150 ns Ic = 300 mA, lpi In2 = 30 MA (test circuit no. 242) 3-149