MJE210 SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) -40 V V CEO Collector-Emitter Voltage (I B = 0) -25 V V EBO Base-Emitter Voltage (IC = 0) -8 V Collector Current -5 A IC I CM IB P tot T stg Tj Parameter Collector Peak Current -10 A Base Current -1 A Total Power Dissipation at T case 25 o C at T amb 25 o C 15 1.5 Storage Temperature Max Operating Junction Temperature September 1997 W -65 to 150 o C 150 o C 1/4 MJE210 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max o 83.4 8.34 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. I CBO Collector Cut-off Current (I E = 0) V CB = -40 V V CB = -40 V I EBO Emitter Cut-off Current (I C = 0) V EB = -8 V Collector-Emitter Sustaining Voltage I C = -10 mA Collector-Emitter Sustaining Voltage I C = -0.5 A I C = -2 A I C = -5 A I B = -50 mA I B = -0.2 A I B = -1 A V BE(sat) Base-Emitter on Voltage I C = -5 A I B = -1 A V BE Base-Emitter on Voltage I C =- 2 A V CE = -1 V DC Current Gain I C = -0.5 A I C = -2 A I C = -5 A V CE = -1 V V CE = -1 V V CE = -2 V 70 45 10 Transistor Frequency I C = 0.1 A f = 10 MHz V CE = 10 V 65 Collector-base Capacitance V CB = -10 V V CEO(sus) V CE(sat) h FE fT C CBO Pulsed: Pulse duration = 300s, duty cycle 1.5% 2/4 T CASE = 125 o C Typ. Max. Unit -100 -100 nA A -100 nA -25 IE = 0 f = 0.1 MHz V -0.3 -0.75 -1.8 -2.5 -1.6 V V V V V 180 MHz 120 pF MJE210 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e e3 2.2 4.15 F G 4.65 0.163 3.8 3 0.183 0.150 3.2 H H2 0.087 0.118 0.126 2.54 0.100 2.15 0.084 H2 0016114 3/4 MJE210 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4