MJE210
S ILICON PNP TRANSISTOR
■SGS -THO MS ON PRE F ERRE D SALES T YP E
■PNP TRANS IST OR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
INTERNAL SCHEMATI C DIAG RAM
September 1997
321
SOT-32
ABS O LUT E MAXIM UM RATI NG S
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -40 V
VCEO Collector-Emitter Voltage (IB = 0) -25 V
VEBO Base-Emitter Voltage (IC = 0) -8 V
ICCollector Current -5 A
ICM Collector Peak Current -10 A
IBBase Current -1 A
Ptot Total Power Dissipation at Tcase ≤ 25 oC
at Tamb ≤ 25 oC15
1.5 W
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
1/4
THERMAL DATA
Rthj-amb
Rthj-case Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-case Max 83.4
8.34
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = -40 V
VCB = -40 V TCASE = 125oC-100
-100 nA
µA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = -8 V -100 nA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = -10 mA -25 V
VCE(sat)∗Collector-Emitter
Sustaining Voltage IC = -0.5 A IB = -50 mA
IC = -2 A IB = -0.2 A
IC = -5 A IB = -1 A
-0.3
-0.75
-1.8
V
V
V
VBE(sat)∗Base-Emitter on
Voltage IC = -5 A IB = -1 A -2.5 V
VBE∗Base-Emitter on
Voltage IC =- 2 A VCE = -1 V -1.6 V
hFE∗DC Current Gain IC = -0.5 A VCE = -1 V
IC = -2 A VCE = -1 V
IC = -5 A VCE = -2 V
70
45
10 180
fTTransistor Frequency I C = 0.1 A VCE = 10 V
f = 10 MHz 65 MHz
CCBO Collector-base
Capacitance VCB = -10 V IE = 0 f = 0.1 MHz 120 pF
∗ P ulsed: P ulse duration = 300µs, duty cyc le ≤ 1.5%
MJE210
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e2.2 0.087
e3 4.15 4.65 0.163 0.183
F3.8 0.150
G 3 3.2 0.118 0.126
H2.540.100
H2 2.15 0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
MJE210
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for th e
conse quences of use of such information n or for any infringement of patent s or other rights of third parties which may results from its use. No
license is granted by implicat ion or ot he rwise under any patent or patent rights of SGS-THOMSON Microelectronics . Specifi cations mentioned
in this publication are subject to change without noti ce. This publicat ion sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Right s Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
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MJE210
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