Feb.1999
FS70VSJ-06 OUTLINE DRAWING Dimensions in mm
TO-220S
MITSUBISHI Nch POWER MOSFET
FS70VSJ-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
V
V
A
A
A
A
A
W
°C
°C
g
60
±20
70
280
70
70
280
125
–55 ~ +150
–55 ~ +150
1.2
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡4V DRIVE
¡VDSS ................................................................................. 60V
¡rDS (ON) (MAX) ................................................................7mΩ
¡ID ........................................................................................ 70A
¡Integrated Fast Recovery Diode (TYP.) ............ 90ns
10.5MAX.
1.3
1.5MAX.
qwe
r4.5
0
+0.3
–0
3.0
+0.3
–0.5
150.8
8.6 ± 0.3
9.8 ± 0.5 1.5MAX.
(1.5)
0.5
4.5
2.6 ± 0.4
B
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
e
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS70VSJ-06
HIGH-SPEED SWITCHING USE
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
5.4
6.5
0.19
65
8200
1600
860
54
150
800
380
1.0
—
90
—
±0.1
0.1
2.0
7.0
8.4
0.25
—
—
—
—
—
—
—
—
1.5
1.0
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 35A, VGS = 10V
ID = 35A, VGS = 4V
ID = 35A, VGS = 10V
ID = 35A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50 Ω
IS = 35A, VGS = 0V
Channel to case
IS = 70A, dis/dt = –100A/µs
PERFORMANCE CURVES
0
40
80
120
160
200
0 20050 100 150
100
3
5
7
101
2
3
5
7
102
2
3
2
3
5
7
100210
1
357357 2 10
2
357 23
T
C
= 25°C
Single Pulse
tw = 10ms
100ms
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
6V
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
5V
3V
P
D
= 125W
5V
0
10
20
30
40
50
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 10V T
C
= 25°C
Pulse Test
4V
2.5V
3.5V
3V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0246810
TC = 25°C
VDS = 10V
Pulse Test
10
0
10
1
23 57 10
2
23 57
10
0
10
1
2
3
5
7
10
2
2
3
5
7
TC = 25°C75°C
125°C
VDS = 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
0246810
ID = 100A
TC = 25°C
Pulse Test
70A
30A
10
3
3
5
7
10
4
2
3
5
7
10
5
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Crss
Coss
Tch = 25°C
f = 1MHZ
VGS = 0V
10
0
10
1
23 57 10
2
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
td(off)
tr
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
tf
td(on)
VGS = 4V
0
2.0
4.0
6.0
8.0
10.0
10
0
357 2 10
1
357 2 10
2
357 23
TC = 25°C
Pulse Test
10V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS70VSJ-06
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0 0.4 0.8 1.2 1.6 2.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
0
2
4
6
8
10
0 40 80 120 160 200
V
DS
= 10V
20V
40V
T
ch
= 25°C
I
D
= 70A
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
