MOSFET MODULE PD7M441H / PD7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension(mm) * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g MAXMUM RATINGS Ratings Symbol PD7M441H PD7M440H Unit Drain-Source Voltage (VGS=0V) Gate - Source Voltage VDSS VGSS 450 500 V V Continuous Drain Current Duty=50% D.C. +/ - 20 50 (Tc=25C) 35 (Tc=25C) 100 Tc=25C) 350 Tc=25C) -40 to +150 -40 to +125 2000 3.0 2.0 ID Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals IDM PD Tjw Tstg VISO FTOR ELECTRICAL CHARACTERISTICS (@Tc=25C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Rth(j-c) Thermal Resistance, Case to Heatsink Rth(c-f) A W C C V N*m Min. Typ. Max. Unit 2.0 - 3.1 110 3.2 45 9.0 1.7 0.32 120 80 240 50 1.0 4.0 4.0 1.0 120 3.4 - mA VDS=VDSS,VGS=0V Tj=125C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=25A VGS=10V, ID=25A VDS=15V, ID=25A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=25A VGS= -5V, +10V RG= 7ohm FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Characteristic Symbol Test Condition A V A m-ohm V S nF nF nF ns Min. Typ. Max. - 100 0.15 35 100 1.9 - Unit A A V ns C Test Condition Min. Typ. Max. Unit MOS FET Diode Mounting surface flat, smooth, and greased - - 0.36 2.0 0.1 C/W D.C. IS=50A IS=50A, -dis/dt=100A/s PD7M44xH 108.0 Fig.2TypicalDrain-SourceOn-Voltage Fig.2Vs.Gate-SourceVoltage TC=25250sPulseTest 10V 60 40 VGS=5V 20 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0Vf=1kHz Ciss 9 6 Coss Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) Fig.7TypicalSwitchingTime Fig.7Vs.DrainCurrent SOURCE CURRENT IS (A) SWITCHING TIME t (ns) 200 td(on) 100 tr tf 50 10 8 4 1 2 5 10 20 DRAIN CURRENT ID (A) 50 100 Fig.10MaximumSafeOperatingArea TC=25Tj=150MAXSinglePulse Operationinthisarea islimitedbyRDS(on) 100 10s 0 80 160 240 320 400 TOTAL GATE CHRAGE Qg (nC) 160 2 1 0.5 toff ton Tj=125 Tj=25 40 0 0.3 0.6 0.9 1.2 1.5 SOURCE TO DRAIN VOLTAGE VSD (V) Fig.11-1 NormalizedTransientThermal impedance(MOSFET) 100s 20 1ms 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 Fig.9TypicalReverseRecoveryCharacteristics 60 0 0.1 480 80 50 DRAIN CURRENT ID (A) 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) ID=25AVDD=250VTC=2580sPulseTest 10 250sPulseTest 200 10 0 -40 0.2 20 20 15A 4 5 100 td(off) 25A ID=35A 120 500 8 VDD= 100V 250V 400V Fig.8TypicalSource-DrainDiodeForward Fig.8Characteristics RG=7VDD=250VTC=2580sPulseTest 1000 12 Fig.6TypicalSwitchingTime Fig.6Vs.SeriesGateimpedance 12 0 100 ID=50A 16 IS=50AIS=25ATj=150 500 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 15 3 0 Fig.5TypicalGateCharge Fig.5Vs.Gate-SourceVoltage 18 12 15A 2 0 12 Fig.4TypicalCapacitance Fig.4Vs.Drain-SourceVoltage 25A VGS=10V250sPulseTest 16 SWITCHING TIME t (s) 0 4 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 0 ID=50A 6 200 trr 100 50 IR 20 10 5 1.8 0 100 200 300 400 -dis/dt (A/s) 500 600 2 10 0 5 2 10 -1 PerUnitBase Rth(j-c)=0.36/W 1ShotPulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 5 2 10ms 1 DC 0.5 0.2 1 2 -441H -440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) Fig.11-2 NormalizedTransientThermal impedance(DIODE) NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 6V TC=25250sPulseTest 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 80 Fig.3TypicalDrain-SourceOnVoltage Fig.3Vs.JunctionTemperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) Fig.1TypicalOutputCharacteristics 2 10 0 5 2 10 -1 PerUnitBase Rth(j-c)=2.0/W 1ShotPulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1