MOSFET MODULE
MODULE MODULE
MODULE Dual 50A 450V/500V
Dual 50A 450V/500VDual 50A 450V/500V
Dual 50A 450V/500V
PD7M441H / PD7M440H
PD7M441H / PD7M440HPD7M441H / PD7M440H
PD7M441H / PD7M440H
MAXMUM RATINGS
Ratings Symbol PD7M441H PD7M440H Unit
Drain-Source Voltage (VGS=0V) VDSS 450 500 V
Gate - Source Voltage VGSS +/ - 20 V
Duty=50% 50 (Tc=25°C)
Continuous Drain Current D.C. ID 35 (Tc=25°C) A
Pulsed Drain Current IDM 100 Tc=25°C) A
Total Power Dissipation PD 350 Tc=25°C) W
Operating Junction Temperature Range Tjw -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminals to Base AC, 1 min.) VISO 2000 V
Module Base to Heatsink 3.0
Mounting Torque Bus Bar to Main Terminals FTOR 2.0 N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
VDS=VDSS,VGS=0V - - 1.0
Zero Gate Voltage Drain Current IDSS Tj=125°C, VDS=VDSS,VGS=0V - - 4.0
mA
Gate-Source Threshold Voltage VGS(th) V
DS=VGS, ID=1mA 2.0 3.1 4.0
V
Gate-Source Leakage Current IGSS V
GS=+/- 20V,VDS=0V - - 1.0
µA
Static Drain-Source On-Resistance rDS(on) V
GS=10V, ID=25A - 110 120
m-ohm
Drain-Source On-Voltage VDS(on) V
GS=10V, ID=25A - 3.2 3.4
V
Forward Transconductance gfs V
DS=15V, ID=25A - 45 -
S
Input Capacitance Cies - 9.0 -
nF
Output Capacitance Coss - 1.7 -
nF
Reverse Transfer Capacitance Crss VDS=25V,VGS=0V,f=1MHz - 0.32 - nF
Turn-On Delay Time td(on) - 120 -
Rise Time tr - 80 -
Turn-Off Delay Time td(off) - 240 -
Fall Time tf
VDD= 1/2VDSS
ID=25A
VGS= -5V, +10V
RG= 7ohm - 50 -
ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Continuous Source Current IS D.C. - - 35 A
Pulsed Source Current ISM - - - 100
A
Diode Forward Voltage VSD I
S=50A - - 1.9
V
Reverse Recovery Time trr - 100 -
ns
Reverse Recovery Qr IS=50A, -dis/dt=100A/µs - 0.15 - µC
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
MOS FET - - 0.36
Thermal Resistance, Junction to Case Rth(j-c) Diode - - 2.0
Thermal Resistance, Case to Heatsink Rth(c-f) Mounting surface flat, smooth, and greased - - 0.1 °C/W
Dimension(mm)
FEATURES
* Dual MOS FETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs b
y
SBDs, and Ultra Fast Recovery Diode
s
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
A
pproximate Weight : 220
g
OUTLINE DRAWING
Circuit
108.0
PD7M44xH
108.0
80
60
40
20
0024681012
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
TC=25℃250μsPulseTest
10V
6V
4V
VGS=5V
Fig.1TypicalOutputCharacteristics
18
15
12
9
6
3
01 2 5 10 20 50 100
CAPACITANCE C (nF)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
VGS=0Vf=1kHz
Ciss
Coss
Crss
Fig.4TypicalCapacitance
Fig.4Vs.Drain-SourceVoltage
1000
500
100
200
50
20
101 2 5 10 20 50 100
SWITCHING TIME t (ns)
RG=7ΩVDD=250VTC=25℃80μsPulseTest
DRAIN CURRENT I
D
(A)
td(off)
td(on)
tr
tf
Fig.7TypicalSwitchingTime
Fig.7Vs.DrainCurrent
200
50
100
20
10
5
0.5
1
2
0.21 2 5 10 20 50 100 500200 1000
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
TC=25℃Tj=150℃MAXSinglePulse
10μs
1ms
10ms
DC
100μs
−441H −440H
Operationinthisarea
islimitedbyRDS(on)
Fig.10MaximumSafeOperatingArea
8
6
4
2
00 4 8 12 16
DRAIN TO SOURCE ON VOLTAGE V
DS
(on)(V)
GATE TO SOURCE VOLT A GE V
GS
(V)
TC=25℃250μsPulseTest
25A
15A
ID=50A
Fig.2TypicalDrain-SourceOn-Voltage
Fig.2Vs.Gate-SourceVoltage
16
12
8
4
00 80 160 240 320 400 480
GATE TO SOURCE VOLT A GE V
GS
(V)
TOTAL GATE CHRAGE Q
g
(nC)
ID=35A
100V
250V
400V
VDD=
Fig.5TypicalGateCharge
Fig.5Vs.Gate-SourceVoltage
120
100
80
60
40
20
00 0.3 0.6 0.9 1.2 1.5 1.8
SOURCE CURRENT I
S
(A)
SOURCE TO DRAIN VOLTAGE V
SD
(V)
250μsPulseTest
Tj=125℃
Tj=25℃
Fig.8TypicalSource-DrainDiodeForward
Fig.8Characteristics
10
-2
2
10
0
5
2
10
-1
5
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
PerUnitBase
Rth(j-c)=0.36℃/W
1ShotPulse
Fig.11-1
NormalizedTransientThermal
impedance(MOSFET)
16
12
8
4
0
-40 0 40 80 120 160
DRAIN TO SOURCE ON VOLTAGE V
DS
(on)(V)
JUNCTION TEMPERATURE T
j
(
 
)
VGS=10V250μsPulseTest
25A
15A
ID=50A
℃
Fig.3TypicalDrain-SourceOnVoltage
Fig.3Vs.JunctionTemperature
10
5
1
2
0.5
0.2
0.12 5 10 20 50 100 200
SWITCHING TIME t (
μ
s)
ID=25AVDD=250VTC=25℃80μsPulseTest
SERIES GATE IMPEDANCE R
G
(
 
)
Ω
toff
ton
Fig.6TypicalSwitchingTime
Fig.6Vs.SeriesGateimpedance
500
200
50
100
20
10
50 100 200 300 400 500 600
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE CURRENT I
R
(A)
-dis/dt (A/
μ
s)
trr
IR
IS=50A IS=25ATj=150℃
Fig.9TypicalReverseRecoveryCharacteristics
10
-2
2
10
0
5
2
10
-1
5
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT
THERMAL IMPEDANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
PerUnitBase
Rth(j-c)=2.0℃/W
1ShotPulse
Fig.11-2
NormalizedTransientThermal
impedance(DIODE)
Ｍ
Ｏ
Ｓ
Ｆ
Ｅ
Ｔ
モ
ジ
ュ
ー
ル