Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
1
1
1
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* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Pin Configuration
Functional Schematic
Ordering Information1
Part Number Package
XP1042-QT-0G00 bulk quantity
XP1042-QT-0G0T tape and reel
XP1042-QT-EV1 evaluation module
1. Reference Application Note M513 for reel size information.
Pin No. Function Pin No. Function
1-2 Not Connected 10 RF Output
3 RF Input 11-12 Not Connected
4 Not Connected 13 Drain 3 Bias
5 Gate 1 Bias 14 Drain 2 Bias
6 Gate 2 Bias 15 Drain 1 Bias
7 Gate 3 Bias 16 Not Connected
8-9 Not Connected 172 Paddle
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
Features
21 dB Small Signal Gain
25 dBm P1dB Compression Point
38 dBm Output IP3 Linearity
17 dB Gain Control with Bias Adjust
Lead-Free 3 mm 16-lead QFN Package
100% RF Testing
RoHS* Compliant and 260°C Reflow Compatible
Description
The XP1042-QT is a packaged driver amplifier that
operates over the 12 - 16 GHz frequency band. The
device provides 21 dB gain and 38 dBm Output
Third Order Intercept Point (OIP3) across the band
and is offered in an industry standard, fully molded
3 mm QFN package. The device includes on-chip
ESD protection structures and DC by-pass
capacitors to ease the implementation and volume
assembly of the packaged part.
The device is manufactured in 0.5 µm GaAs pHEMT
device technology with BCB wafer coating to
enhance ruggedness and repeatability of
performance.
The XP1042-QT is specifically designed for Point to
Point radio applications and is well suited for other
telecom applications such as SATCOM and VSAT.
RFIN
N/C
N/C
1516 1314
87
65
1
2
4
11
10
9
12
3
N/C
N/C
VG1VG2 VG3
RFOUT
N/C
N/C
N/C
N/C VD1VD2 VD3
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
2
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Electrical Specifications: Freq = 12 - 16 GHz, TA = +25°C
Parameter Units Min. Typ. Max.
Small Signal Gain (S21) dB 19 21 -
Input Return Loss (S11) dB - 12 -
Output Return Loss (S22) dB - 10 -
Reverse Isolation (S12) dB - 50 -
NF at Max Gain dB - 6 8
P1dB dB - 25 -
OIP3 at Pout = 8 dBm per Tone dBm 36 38 -
Drain Bias Voltage (Vd1,2,3) VDC - 5 -
Gate Bias Voltage (Vg1,2,3) VDC -2 -1 -
Supply Current (Id1) mA - 75 125
Supply Current (Id2) mA - 75 125
Supply Current (Id3) mA - 150 250
Absolute Maximum Ratings3,4
Parameter Absolute Max.
Supply Voltage (Vd1,2,3) +8.0 V
Supply Current (Id1,2,3) 550 mA
Gate Bias Voltage (Vg1,2,3) -2.4 V
Max Power Dissipation (Pdiss) 2.8 W
RF Input Power 15 dBm
Operating Temperature (Ta) -55ºC to +85ºC
Storage Temperature (Tstg) -65ºC to +165ºC
Channel Temperature (Tch)5 150ºC
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1A devices.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Operating at nominal conditions with TJ ≤ +150°C will ensure
MTTF > 1 x 106 hours.
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
3
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Typical Performance Curves: VD = 5 V, ID1 = 125 mA, ID2 = 125 mA, ID3 = 250 mA
-20
-15
-10
-5
0
5
10
15
20
25
10 11 12 13 14 15 16 17 18
S21
S11
S22
5
10
15
20
25
30
-15 -10 -5 0 5 10
12.5 GHz
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
0
10
20
30
40
50
60
70
80
6 8 10 12 14 16 18 20
12.5 GHz
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
S-Parameters vs. Frequency
Output Power vs. Input Power
C/13 vs. Output Power, 100 MHz per tone
Frequency (GHz)
Input Power (dBm)
Output Power/per tone (dBm)
C/13 (dBc) Output Power (dBm) S-Parameters (dB)
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
4
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MTTF
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating
foundry.
1.E+10
1.E+12
1.E+14
1.E+00
1.E+02
1.E+04
1.E+06
1.E+08
20 30 40 50 60 70 80 90 100 110 120
120
140
160
180
200
0
20
40
60
80
100
20 30 40 50 60 70 80 90 100 110 120
1 5
2
2.5
3
0
0.5
1
1
.
5
25 50 75 100 125 150 175
MTTF Hours vs. Package Base Temperature
VD1,2,3 = 5 V, ID1 = 125 mA, ID2 = 125 mA, ID3 = 250 mA
Tch (max.) vs. Package Base Temperature
VD1,2,3 = 5 V, ID1 = 125 mA, ID2 = 125 mA, ID3 = 250 mA
Operating Power De-rating Curve (continuous)
VD1,2,3 = 5 V, ID1 = 125 mA, ID2 = 125 mA, ID3 = 250 mA
Package Base Temp (°C)
Package Base Temp (°C)
Package Base Temp (°C)
Pdiss (W) Tch max. (°C)
MTTF (hours)
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
5
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3
at 5 V with 125, 125, 250 mA respectively. It is recommended to use active bias to keep the currents
constant in order to maintain the best performance over temperature. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The
gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate
voltage needed to do this is 1 V. Make sure to sequence the applied voltage to ensure negative gate bias
is available before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100 pF
decoupling caps as close to the bias pins as possible, with additional 10 μF decoupling caps.
Recommended Layout
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
6
6
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Lead-Free 3 mm 16-Lead PQFN
Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is 100% matte tin over copper.
Power Amplifier
12 - 16 GHz
Rev. V3
XP1042-QT
7
7
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
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