September 2009 Doc ID 9565 Rev 6 1/18
18
STD3NK80Z, STD3NK80Z-1
STF3NK80Z, STP3NK80Z
N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
■Extremely high dv/dt capability
■100% avalanche tested
■Gate charge minimized
■Very low intrinsic capacitances
■Very good manufacturing repeatability
Application
■Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Figure 1. Internal schematic diagram
Type VDSS
(@Tjmax) RDS(on) ID
STP3NK80Z 800 V < 4.5 Ω2.5 A
STF3NK80Z 800 V < 4.5 Ω2.5 A
STD3NK80Z 800 V < 4.5 Ω2.5 A
STD3NK80Z-1 800 V < 4.5 Ω2.5 A
12
3
TO-220FP
TO-220
IPAK
DPAK
1
3
3
2
1
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes Marking Package Packaging
STP3NK80Z P3NK80Z TO-220 Tube
STF3NK80Z F3NK80Z TO-220FP Tube
STD3NK80ZT4 D3NK80Z DPAK Tape and reel
STD3NK80Z-1 D3NK80Z IPAK Tube
www.st.com
Contents STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
2/18 Doc ID 9565 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical ratings
Doc ID 9565 Rev 6 3/18
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220, DPAK
IPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 800 V
VDGR Drain-gate voltage (RGS = 20 kΩ)800V
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 2.5 2.5 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC=100 °C 1.57 1.57 (1) A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 10 10 (1) A
PTOT Total dissipation at TC = 25 °C 70 25 W
Derating factor 0.56 0.2 W/°C
VESD(G-S)
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)2000 V
dv/dt (3)
3. ISD ≤ 2.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) 2500 V
TJ
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP DPAK
IPAK
Rthj-case Thermal resistance junction-case max 1.78 5 1.78 °C/W
Rthj-a Thermal resistance junction-ambient max 62.5 100 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Electrical ratings STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
4/18 Doc ID 9565 Rev 6
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max) 2.5 A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAR, VDD=50 V) 170 mJ
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics
Doc ID 9565 Rev 6 5/18
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 1 mA, VGS= 0 800 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,
Tc = 125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VGS = 0) VGS = ± 20 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance VGS = 10 V, ID = 1.25 A 3.8 4.5 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance VDS =15 V, ID = 1.25 A - 2.1 - S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0 -
485
57
11
-
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS=0, VDS =0 to 640 V - 22 - pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.25 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
-
17
27
36
40
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640 V, ID = 2.5 A
VGS =10 V -
19
3.2
10.8
-
nC
nC
nC
Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
6/18 Doc ID 9565 Rev 6
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current - 2.5 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 10 A
VSD(2)
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage ISD= 2.5 A, VGS=0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V
(see Figure 21)
-
384
1600
8.4
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=150 °C
(see Figure 21)
-
474
2100
8.8
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1mA (open drain) 30 - - V
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics
Doc ID 9565 Rev 6 7/18
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for
TO-220, DPAK, IPAK
Figure 3. Thermal impedance for
TO-220, DPAK, IPAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
Electrical characteristics STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
8/18 Doc ID 9565 Rev 6
Figure 8. Transconductance Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Electrical characteristics
Doc ID 9565 Rev 6 9/18
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche
energy vs temperature
Test circuits STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
10/18 Doc ID 9565 Rev 6
3 Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data
Doc ID 9565 Rev 6 11/18
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
12/18 Doc ID 9565 Rev 6
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data
Doc ID 9565 Rev 6 13/18
Dim.
mm
.xaM.pyT.niM
6.44.4A
7.25.2B
57.25.2D
7.054.0E
157.0F
07.151.11F
5.151.12F
2.559.4G
7.24.21G
4.0101H
612L
6.036.823L
6.018.94L
6.39.25L
4.619.516L
3.997L
2.33aiD
7012510_Rev_J
AB
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
TO-220FP mechanical data
Package mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
14/18 Doc ID 9565 Rev 6
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Package mechanical data
Doc ID 9565 Rev 6 15/18
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10
o
TO-251 (IPAK) mechanical data
0068771_H
Packing mechanical data STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
16/18 Doc ID 9565 Rev 6
5 Packing mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z Revision history
Doc ID 9565 Rev 6 17/18
6 Revision history
Table 9. Revision history
Date Revision Changes
09-Sep-2004 3Complete document
10-Aug-2006 4 New template, no content change
26-Feb-2009 5 Updated mechanical data
07-Sep-2009 6 VESD(G-S) value has been corrected
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
18/18 Doc ID 9565 Rev 6
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