Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1 1Publication Order Number:
RB751V40T1/D
RB751V40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
•Extremely Fast Switching Speed
•Extremely Low Forward Voltage – 0.28 Volts (Typ) @ IF = 1 mAdc
•Low Reverse Current
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR30 Vdc
Electrostatic Discharge ESD HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RJA 635 °C/W
Junction and Storage
Temperature Range TJ, Tstg –55 to
+150 °C
1. FR–5 Minimum Pad
40 V SCHOTTKY
BARRIER DIODE
Device Package Shipping
ORDERING INFORMATION
RB751V40T1 SOD–323 3000/Tape & Reel
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SOD–323
CASE 477
PLASTIC
2
1
1
CATHODE
2
ANODE
5E = Specific Device Code
M = Date Code
MARKING DIAGRAMS
5E M
RB751V40T1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 µA) V(BR)R 30 – – Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz) CT– 2.0 2.5 pF
Reverse Leakage
(VR = 30 V) IR– 300 500 nAdc
Forward Voltage
(IF = 1.0 mAdc) VF– 0.28 0.37 Vdc
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820 Ω
0.1 µF
DUT
VR
100 µH
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
RB751V40T1
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3
25°C
125°C
85°C
TA = 150°C
0 0.05
VF, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
VR, REVERSE VOLTAGE (VOLTS)
0.5
0
CT, CAPACITANCE (pF)
2.0 4.0
IF, FORWARD CURRENT (mA)
Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse
Voltage
Figure 4. Typical Capacitance
-40°C
25°C
IR, REVERSE CURRENT (µA)
-55°C
150°C
125°C
1000
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
RB751V40T1
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4
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE B
0.63mm
0.025
1.60mm
0.063
2.85mm
0.112
0.83mm
0.033
mm
inches
SOD–323
Soldering Footprint
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12
DB
E
H
C
J
STYLE 1:
PIN 1. CATHODE
2. ANODE
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RB751V40T1/D
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