VP2206N3GP003 - SUPERTEX - Datasheet.Live

Supertex inc.

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

VP2206

P-Channel Enhancement-Mode

Vertical DMOS FET

Pin Congurations

TO-92 (N3)

Product Marking

TO-39 (N2)

YY = Year Sealed

WW = Week Sealed

VP

2206N2

YYWW

Features

►Free from secondary breakdown

►Low power drive requirement

►Ease of paralleling

►Low CISS and fast switching speeds

►High input impedance and high gain

►Excellent thermal stability

►Integral source-to-drain diode

Applications

►Motor controls

►Converters

►Ampliers

►Switches

►Power supply circuits

►Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

General Description

The Supertex VP2206 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low

input capacitance, and fast switching speeds are desired.

GATE

SOURCE

DRAIN

TO-39 (N2)

GATE

SOURCE

DRAIN

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiVP

2206

YYWW

Package may or may not include the following marks: Si or

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BVDSS

Drain-to-gate voltage BVDGS

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

Device

Package Options Wafer / Die Options

TO-39 TO-92 NW

(Die in wafer form)

NJ

(Die on adhesive tape)

ND

(Die in wafe pack)

VP2206 VP2206N2 VP2206N3-G VP5206NW VP5206NJ VP5206ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-39 package is RoHS compliant (‘Green’).

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specication VF52 for layout and dimensions.

Product Summary

Device BVDSS/BVDGS

(V)

RDS(ON)

(max)

(Ω)

ID(ON)

(min)

(A)

VP2206N2 -60 0.9 -4.0

VP2206N3-G

2

VP2206

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Electrical Characteristics (TA = 25OC unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -10mA

VGS(th) Gate threshold voltage -1.0 - -3.5 V VGS = VDS, ID= -10mA

ΔVGS(th) Change in VGS(th) with temperature - -4.3 -5.5 mV/OC VGS = VDS, ID= -10mA

IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V

IDSS Zero gate voltage drain current

- - -50 µA VGS = 0V, VDS = Max Rating

- - -10 mA VDS = 0.8 Max Rating,

VGS = 0V, TA = 125°C

ID(ON) On-state drain current -0.85 -2.0 - VGS = -5.0V, VDS = -25V

-4.0 -9.0 - A VGS = -10V, VDS = -25V

RDS(ON) Static drain-to-source on-state resistance - 1.3 1.5 ΩVGS = -5.0V, ID = -1.0A

- 0.75 0.9 VGS = -10V, ID = -3.5A

ΔRDS(ON) Change in RDS(ON) with temperature - 0.85 1.2 %/OC VGS = -10V, ID = -3.5A

GFS Forward transductance 800 1400 - mmho VDS = -25V, ID = -2.0A

CISS Input capacitance - 325 450

pF

VGS = 0V,

VDS = -25V,

f = 1.0MHz

COSS Common source output capacitance - 125 180

CRSS Reverse transfer capacitance - 30 40

td(ON) Turn-on delay time - 4.0 15

ns

VDD = -25V,

ID = -4.0A,

RGEN = 10Ω

trRise time - 16 25

td(OFF) Turn-off delay time - 16 50

tfFall time - 22 50

VSD Diode forward voltage drop - -1.1 -1.6 V VGS = 0V, ISD = -3.5A

trr Reverse recovery time - 500 - ns VGS = 0V, ISD = -1.0A

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Notes:

† ID (continuous) is limited by max rated TJ .

Thermal Characteristics

Package

ID

(continuous)†

(A)

ID

(pulsed)

(A)

Power Dissipation

@TC = 25OC

(W)

θJC

(OC/W)

θJA

(OC/W)

IDR

†

(A)

IDRM

(A)

TO-39 -0.75 -8.0 6.0 20.8 125 -0.75 -8.0

TO-92 -0.64 -4.0 1.0 125 170 -0.64 -4.0

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%

Pulse

Generator

V

DD

R

L

Output

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

f

t

r

INPUT

OUTPUT

0V

VDD

R

GEN

0V

-10V

3

VP2206

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves

Output CharacteristicsSaturation Characteristics

Maximum Rated Safe Operating Area

-1.0 -10 -100 -1000

-10

-1.0

-0.1

-0.01

Thermal Response Characteristics

Thermal Resistance (normalized)

0.001 0.01 0.1 1.0 10

Transconductance vs. Drain Current

2.0

1.0

00 -5.0 -10

Power Dissipation vs. Case Temperature

0 25 50 75 100 125 150

TO-39

PD = 6.0W

TC = 25OC

TO-92

TO-39

TO-39 (DC)

TO-92 (DC)

TO-39 (pulsed)

0 -10 -20 -30 -40 -50

-3V

0 -2.0 -4.0 -6.0 -8.0 -10

-6V

TO-92 (pulsed)

-4V

-3V

-8V

-6V

-4V

T

C

= 25

O

C

V

DS

(volts)

I

D

(amperes)

V

DS

(volts)

V

GS

= -10V V

GS

= -10V

G

FS

(siemens)

I

D

(amperes) T

C

(

O

C)

P

D

(watts)

V

DS

= -25V

V

DS

(volts)

I

D

(amperes)

t

P

(seconds)

I

D

(amperes)

T

A

= 125

O

C

-8V

T

A

= 25

O

C

T

A

= -55

O

C

TO-92

PD = 1.0W

TC = 25OC

-10

-8.0

-6.0

-4.0

-2.0

0

-10

-8.0

-6.0

-4.0

-2.0

0

10

8.0

6.0

4.0

2.0

0

10

8.0

6.0

4.0

2.0

0

4

VP2206

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves (cont.)

Gate Drive Dynamic Characteristics

V

GS(th)

(normalized)

On-Resistance vs. Drain Current

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

400

300

200

100

0

C (picofarads)

0 -10 -20 -30 -40

-50 0 50 100 150

1.1

1.0

0.9

5.0

4.0

3.0

2.0

1.0

0

1.2

1.1

1.0

0.9

0.8

0.7

-10

-8.0

-6.0

-4.0

-2.0

00 2.0 4.0 6.0 8.0 10

310 pF

0 -2.0 -4.0 -6.0 -8.0 -10

f = 1.0MHz

725 pF

2.0

1.6

1.2

0.8

0.4

0

V(th) @ -1.0mA

RDS(ON) @ -10V, -3.5A

VGS = -5.0V

R

DS(ON)

(ohms)

BV

DSS

(normalized)

T

j

(

O

C) I

D

(amperes)

BVDSS Variation with Temperature

VDS = -25V

V(th) and RDS Variation with Temperature

V

GS

(volts)

R

DS(ON)

(normalized)

Q

G

(nanocoulombs)

V

GS

(volts)

V

DS

(volts)

C

ISS

C

OSS

C

RSS

V

DS

= -40V

V

DS

= -10V

T

j

(

O

C)

I

D

(amperes)

VGS = -10V

-50 0 50 100 150

25

O

C

T

A

= -55

O

C

125

O

C

0 -2.0 -4.0 -6.0 -8.0 -10

-10

-8.0

-6.0

-4.0

-2.0

0

5

VP2206

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

3-Lead TO-39 Package Outline (N2)

1

2

3

Side View

Bottom View

ΦD1

ΦD

A

h

L

Φb

jk

Φa

123

β

α

Seating

Plane

β

Symbol α β AΦaΦbΦDΦD1 h j kL

Dimension

(inches)

MIN

45O

NOM

90O

NOM

.240 .190 .016 .350 .315 .009 .028 .029 .500

NOM ---------

MAX .260 .210 .021 .370 .335 .125 .034 .040 .560*

JEDEC Registration TO-39.

* This dimension is not specied in the JEDEC drawing.

Drawings not to scale.

Supertex Doc. #: DSPD-3TO39N2, Version B052009.

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA

94089

Tel: 408-222-8888

www

.supertex.com

6

VP2206

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-VP2206

D031411

3-Lead TO-92 Package Outline (N3)

Symbol A b c D E E1 e e1 L

Dimensions

(inches)

MIN .170 .014†.014†.175 .125 .080 .095 .045 .500

NOM - - - - - - - - -

MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Seating

Plane

1

2

3

Front View Side View

Bottom View

E1 E

D

e1

L

e

c

1 2 3

b

A