Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability Integral source-to-drain diode The Supertex VP2206 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options Device VP2206 Wafer / Die Options TO-39 TO-92 NW (Die in wafer form) NJ (Die on adhesive tape) ND (Die in waffle pack) VP2206N2 VP2206N3-G VP5206NW VP5206NJ VP5206ND For packaged products, -G indicates package is RoHS compliant (`Green'). TO-39 package is RoHS compliant (`Green'). Devices in Wafer / Die form are RoHS compliant (`Green'). Refer to Die Specification VF52 for layout and dimensions. Product Summary BVDSS/BVDGS Device RDS(ON) ID(ON) (max) () (min) (A) (V) VP2206N2 VP2206N3-G Pin Configurations DRAIN GATE -60 0.9 -4.0 SOURCE SOURCE DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature GATE TO-39 (N2) -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. TO-92 (N3) Product Marking VP 2206N2 YYWW YY = Year Sealed WW = Week Sealed Package may or may not include the following marks: Si or TO-39 (N2) SiVP 2 2 0 6 YYWW YY = Year Sealed WW = Week Sealed = "Green" Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP2206 Thermal Characteristics ID ID Power Dissipation ( C/W) JA ( C/W) IDR IDRM 6.0 20.8 125 -0.75 -8.0 1.0 125 170 -0.64 -4.0 Package (continuous) (A) (pulsed) (A) @TC = 25OC (W) TO-39 -0.75 -8.0 TO-92 -0.64 -4.0 JC O (A) O (A) Notes: ID (continuous) is limited by max rated TJ . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -10mA VGS(th) Gate threshold voltage -1.0 - -3.5 V VGS = VDS, ID= -10mA Change in VGS(th) with temperature - -4.3 -5.5 IGSS Gate body leakage - -1.0 -100 nA VGS = 20V, VDS = 0V - - -50 A IDSS Zero gate voltage drain current VGS = 0V, VDS = Max Rating - - -10 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current -0.85 -2.0 - -4.0 -9.0 - - 1.3 1.5 - 0.75 0.9 - 0.85 1.2 800 1400 - VGS(th) RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature Conditions mV/OC VGS = VDS, ID= -10mA VGS = -5.0V, VDS = -25V A %/ C O VGS = -10V, VDS = -25V VGS = -5.0V, ID = -1.0A VGS = -10V, ID = -3.5A VGS = -10V, ID = -3.5A GFS Forward transductance CISS Input capacitance - 325 450 COSS Common source output capacitance - 125 180 CRSS Reverse transfer capacitance - 30 40 td(ON) Turn-on delay time - 4.0 15 Rise time - 16 25 Turn-off delay time - 16 50 Fall time - 22 50 Diode forward voltage drop - -1.1 -1.6 V VGS = 0V, ISD = -3.5A Reverse recovery time - 500 - ns VGS = 0V, ISD = -1.0A tr td(OFF) tf VSD trr mmho VDS = -25V, ID = -2.0A pF ns VGS = 0V, VDS = -25V, f = 1.0MHz VDD = -25V, ID = -4.0A, RGEN = 10 Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse Generator 10% INPUT -10V td(ON) RGEN 90% t(OFF) t(ON) td(OFF) tr D.U.T. tf INPUT 0V 90% OUTPUT VDD Supertex inc. 10% Output RL 90% 10% VDD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 VP2206 Typical Performance Curves Output Characteristics -10 Saturation Characteristics -10 VGS = -10V VGS = -10V -8.0 -8V -8V -6.0 -4.0 ID (amperes) ID (amperes) -8.0 -6V -2.0 0 -6.0 -4.0 -6V -2.0 0 -10 -20 -30 -4V -4V -3V -3V -40 0 0 -50 -2.0 -4.0 VDS (volts) Transconductance vs. Drain Current 2.0 -6.0 -8.0 -10 VDS (volts) 10 VDS = -25V Power Dissipation vs. Case Temperature TA = -55OC TA = 25OC TA = 125OC PD (watts) GFS (siemens) 8.0 1.0 6.0 TO-39 4.0 2.0 TO-92 0 0 -5.0 0 -10 0 25 50 -10 75 100 125 150 TC (OC) ID (amperes) Maximum Rated Safe Operating Area 10 Thermal Response Characteristics Thermal Resistance (normalized) TO-39 (pulsed) TO-92 (pulsed) TO-39 (DC) ID (amperes) -1.0 TO-92 (DC) -0.1 TC = 25OC -0.01 -1.0 -10 -100 VDS (volts) Supertex inc. -1000 8.0 6.0 TO-39 PD = 6.0W TC = 25OC 4.0 TO-92 PD = 1.0W TC = 25OC 2.0 0 0.001 0.01 0.1 1.0 10 tP (seconds) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 3 VP2206 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 5.0 1.1 VGS = -5.0V RDS(ON) (ohms) BVDSS (normalized) 4.0 1.0 3.0 2.0 VGS = -10V 1.0 0 50 100 0 150 0 -2.0 -4.0 Tj ( C) O Transfer Characteristics -10 1.2 VDS = -25V -8.0 -10 V(th) and RDS Variation with Temperature 2.0 RDS(ON) @ -10V, -3.5A 1.1 TA = -55OC -4.0 VGS(th) (normalized) ID (amperes) -8.0 -6.0 -6.0 ID (amperes) 25OC 125OC 1.6 1.2 1.0 0.9 0.8 V(th) @ -1.0mA 0.8 -2.0 0 0 -2.0 -4.0 -6.0 VGS (volts) -8.0 0.4 0.7 -50 -10 0 50 100 0 150 Tj ( C) O Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 400 f = 1.0MHz CISS -8.0 VGS (volts) C (picofarads) 300 200 VDS = -10V -6.0 VDS = -40V 725 pF -4.0 COSS 100 -2.0 310 pF CRSS 0 0 -10 -20 -30 VDS (volts) Supertex inc. -40 0 0 2.0 4.0 6.0 8.0 10 QG (nanocoulombs) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 4 RDS(ON) (normalized) 0.9 -50 VP2206 3-Lead TO-39 Package Outline (N2) D D1 a A Seating Plane 2 1 3 h 2 1 3 b L j k Bottom View Symbol Dimension (inches) MIN NOM MAX 45O NOM 90O NOM Side View A a b D D1 h j k L .240 .190 .016 .350 .315 .009 .028 .029 .500 - - - - - - - - - .260 .210 .021 .370 .335 .125 .034 .040 .560* JEDEC Registration TO-39. * This dimension is not specified in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO39N2, Version B052009. Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 5 VP2206 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 .014 D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* .022 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate "product liability indemnification insurance agreement." Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. (c)2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VP2206 D031411 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 6