2N1545-2N1641 Numerical Index ele MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS | c= | REPLACE- | PAGE Po | Bi T V Ver_ |= Nee @ Ic V @\ a = TYPE = 5 MENT | NUMBER USE J ce | ce 5 # CEISATI <2 4 | 2 ~. = => @ 25C | S| C {| (volts) | (volts) |S | (min) (max) 5} (volts) s 3 5/3 2N1545 G{ P 7-64 LPA 90w | c | 100 60 45 (58 75 | 150 3.0A 0.2 3.0A LOK IE 2N15454 1 C| P 7-64 | LPA 90w | c | 100 60 45/s| 75 3.0A 0.2] 3.0A 3.0K] E 2N1546 G] P 7-64 LPA 90w | Cc} 100 80 60] Ss 75 { 150 3.0A 0.2 3.0A 1.0K] E 2N1546A | G| PF 7-64 LPA 90W | c} 100 80 6075 75 3.0A 0.2 3.0A 3.0K ]E 2N1547 G| P 7-64 LPA 90W] Cc | 100 100 7515S 75 | 150 3.0A 0.2 3.0A L.OK|E 2N1547A4 ] G] P 7-64 LPA 90W } Cc} 100 100 73/58 75 3.0A 0.2 3.0A 3.0K 1E 2N1548 G| P 7-64 LPA 90W | Cc } 100 120 90) 5 75 | 150 3.04 0.2 3.04 1.0K] E 2N1549 G| P 7-67 LPA 90W | C | 100 40 30] S 10 30 10A 1.0 10A 2N15494 1 G} P 7-67 | LPA gow | c | 100 40 301S ) 10} 30 LOA 1.0 10A 5.0K] E 2N1550 G) P 7-67 LPA 90W |; C } 100 60 45] S 10 30 10A 1.0 LOA 2NI550A} G| P 7-67 | LPA gow | c | 100 60 45/s] 10] 30 10A 1.0 10A 5.0K TE 2N1551 |G] P 7-67 | LPA gow | c | 100 80 60];s | 10] 30 LOA 1.0 10A 2N1551A | G] P 7-67 LPA 90W | c | 100 80 60} S 10 30 10A 1.0 LOA 5.0K |E 2N1552 G| P 7-67 LPA 90W {Cc ] 100 100 75/8 10 30 LOA 1.0 1OA 2N1552A | GI P 7-67 LPA 90W | Cc} 100 100 758 10 30 10A 1.0 10A 5.OK/E 2N1553 G| P 7-67 LPA 90W | c | 100 40 30158 30 60 LOA 0.5 LOA 1.0K] E 2N1553A |G] P 7-67 LPA 90W | c | 100 40 20/0 30 60 10A 0.5 10A 3.0K ]E 2N1554 | G|P 7-67 | LRA 90W | c } 100 60 45/5} 30] 60 10A 0.5 104 L.OK] E 2N15544 | G| P 7-67 LPA 90w | c | 100 60 30] 0 30 60 10A 0.5 10A 3.0K /E 2N1555 | c| P 7-67 | LPA gow | c | 100 80 60/s | 30] 60 10A 0.5 10A 1.0K | E 2N1555A | G| P 7-67 | LPA gow | c | 100 80 40/0] 30] 60 10A 0.5 10A 3.0K | E 2N1556 | G|P 7-67 | LPA 90w | c | L004 100 74s | 30) 60 10A 0.5 LOA L.OK LE 2N1556A | G] P 7-67 LPA 90W | Cc | LOO 100 50|0 30 60 10A 0.5 LOA 3.0K /E 2NL557 GIP 7-67 LPA gow | c | 100 40 3015S 50 | 100 LOA 0.4 LOA L.OKIE 2N1557A 1G] P 7-67 LPA 90W | Cc | 100 40 20/0 50 | LOO LOA 0.5 10A 3.0K) E 2N1558 | GIP 7-67 | LPA gow | c | Loo 40 45/s | 50] 100 LOA 0.4 10A L.OK LE 2N1558A | G| P 7-67 | LPA 90w | c | 100 60 30} 0] 50] 100 10A 0.5 10A 3.0K |E 2N1559 |G] P 7-67 | LPA 90w | c | 100 80 60]S { 50] 100 LOA 0.4 10A L.OK | E 2N1559A | G| P 7-67 LPA 90W | Cc | 100 80 40 ]0 50 | 100 10A 0.5 LOA 3.0K |E 2N1560 G| P 7-67 LPA 90W | Cc | 100 100 75 |S 50 | 100 10A 0.4 10A 1.0K E 2N1560A | G] P 7-67 LPA gow | c | 100 100 50]0 50 { 100 LOA 0.5 10A 3.0K] E 2N1561 G|P 9-24 RFA 250M | A | 100 25 15) 0 3.0 200M 2N1562 G| P 9-24 RFA 250M | A | 100 25 15 |0 4.0 200M 2N1564 S| N | 2N2218 8-108] AFA 600M | A j 175 80 6010 15 50 5.0M 1.0 LOM 20 |E 2N1565 S$] N | 2N2218 8-108) AFA 600M | A} 175 80 60] 0 30 | 100 5.0M 1,0 10M 40 ]E 2N1566 S| N ] 2N2219 8-108] AFA 600M | A | 175 80 60 |} 0 60 | 200 53.0M 1.0 LOM 80} E 2NL566A | S| N | 2N2219 8-108] AFA 600M | A | 175 80 60 | 0 60 | 200 5.0M] 0.95 10M 80 | E 100M | T 2N1572 S| N AFA 600M ; A | 175 125 80/0 15 50 5.0M 1.0 10M 20|E 2N1573 s|N AFA 600M | A j 175 125 80/0 30 | 100 5.0M 1.0 10M 40 ,E 2N1574 S| N AFA 600M } A | 175 125 80/0 60 } 200 5.0M 1,0 10M 80] E 2N1585 | GIN RFA} 750M | A | 100 25 10,0] 20 10M 2N1586 S| N AFA 125M] A 85 15 10 | 0 | 5.0 27 1,0M 1.5 5.0M | 9.0/E 5.0M|B 2N1587 S|] N AFA 125M] A 85 30 20)0 15.0 27 1.0M 1.5 5.0M |] 9.0j/E 5.0M } B 2NL588 S|N AFA 125M | A 85 60 40 |0 15.0 27 1.0M 1.5 5.0M 9.0]JE 5.0M |B 2N1589 S| N AFA 125M; A 85 15 10/0 20 75 1.0M 1.5 5.0M 25 |E 5.0M/B 2N1590 S|N AFA 125M | A 85 30 20]0 20 75 L.0M 1.5 5.0M 25 ]/E 5.0M |B 2NL591 s)N AFA 125M) 4 85 60 40)0]) 20 75 1.0M 1.5 5.0M 25 ],E 5.0M]B 2N1592 SIN AFA 125M 1A 85 15 10/0 40 | 210 1.0M 1.5 5.0M JOE 5.0M 1B 2N1593 S|N AFA 125M} A 85 30 20,0} 40] 210 1.0M 1.5 5.0M 70 |E 5,0M | B 2N1594 s|N AFA 125M | A 85 60 4010] 40 | 210 1.0M 1.5 5.0M 7O|E 5.0M |B 2N1595 thru Thyristors, see Table on Page 1-154 2N1604 2N1605 GIN MSS 150M |-A | LOO 25 2410} 40 20M 0.15 12M 4,0M |B 2N1605A |G|N Mss | 0.2W | A } 100 40 40 40 20M } 0.15 12M 4.0M |B 2NL606 S;P HSS 100M | A | 140 10 10} s | 6.0 30 15M | 0.15 5,0M 7.2M/T 2N1607 S| P HSs 100M | A | 140 10 10 |S | 6.0 30 15M | 0,15 5.0M 10M | T 2N1608 S| P HSs 100M | A | 140 10 10 | s {6.0 30 15M} 0.15 5.0M 25M | T 2N1609 G{ P | 2N2140 7-78 LPA 95 80 60 | oO 30 75 100M 1.0 500M 2N1610 G| P | 2N2145 7-78 LPA 95 80 60 | 0 50 | 125 100M 0.6 500M 2N1611L G| P | 2N2138 7-78 LPA 95 60 40/0 30 75 100M 1.0 500M 2N1612 | G{ P | 2N2143 7-78 | LPA 95 60 40 }o | 50/125 | 100m 0.6 | 500M 2N1613 S|N 8-30 MSA} 800M /A {200 75 50 }R } 405120 150M 4.5 150M 30 | E 60M | T 2N1613A | S | N | 2N2218 8-108 | MSA 1,0W | A | 200 75 50 7R 40 | 120 150M 1.0 150M 30 ]E 60M | T 2N1613B | S|N MSA] 1.,0W} A |200] 120 55 |R | 40]120| 150M 0.2 | 150M 30 | E 60M | T 2n1614 |G| P | 2N1924 6-37 | MSA| 240M | A | 100 65 40 |R ] 18} 43 20M | 0.13 20M 500K | B 2N1615 |S |N RFA| 5.5M{A {200 ] 100 | LOO |o | 25 5. 0M 5.0 50M 2.0M | T 2N1616 S| N |] 2N3487 7-115 | HPA 60w | c {175 60 60 | 0 15 75 2.04 2.0 2.0A 3.0M | T 2N1616A | s | N | 2N3487 7-115 | LPA a5w tc | 200 60 60 }o} 20] 60] 2.0A 1.0] 2.0A 3.0M | T 2N1L617 S| N | 2N3487 7+115 | HPA 60W | c | 175 80 B80] V 15 75 2.04 2.0 2.0A 3.0M | T 2N161L7A | S| N | 2N3487 7-115] LPA 85W 1 C | 200 80 70 | 0 20 60 2.0A 1.0 2.0A 3.0M | T 2N1618 |S] N | 2N3488 7-115 | HPA eow |] c]175 1 100 | 100} Vv} 15] 75] 2.0a 2.0 | 2.04 3.0M | T 2N1618A {S| N | 2N3488 7-115] LPA 85w | Cc | 200 100 80 | 0 20 60 2,04 1.0 2.0A 3.0M | T 2N1620 | S| N | 2N3446 7-111} HPA eow}c}{l75 | 100 | 100 ;V | 15] 75 | 2.0a 2.0] 2.0A 3.0M | T 2N1622 G]N AFA |0.12W]A 85 90 90 |S 40 5.0M 5.0M 2N1623 |S) P AFA} 250M ]A | 160 50 20)0 79.0} 40] 1.0M 0.3] 5.0M 100K | B 2N1624 1 G}N MSS | 0.15W | A | LOO 25 20{R | 60 | 180 30M 5.0M |B 2N1631 G| P | 2N3325 9-71 RFC 80M | A 85 34 40], E 2N1632 |G] P | 2N3325 9-71 | RFC Bg0M | A} 85 34 40 | 8 2N1633 | G|P REC som }A ) 85 34 27,5 2N1634 | G|P RFC 80M } A] 85 34 27) E 2N1635 |G} P RFC som |A | 85 34 40 | E 2N1636 |G|P RFC gom |A | 85 34 40 ]E 2N1637 |G{P | 2N3325 9-71 | RFC goM [A | 85 34 40 1E 2N1638 |G | P | 2N3325 9-71 | RFC som |A |] 85 34 70 |E 2N1639 G| P } 2N3325 9-71 | RFC 80M | A 85 34 40 ]/E 2N1640 1S | P cup | 250M ]A | 160 30 20 | u | 6.0 100* 2NL641 |S | P CHP | 250M {A | 160 30 10 |u { lo 100% 1-120 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors 2N 1561 (Germanium) 2n 1562 2n1692 2nN1693 CASE 23 CASE 24 (TO-107) (TO-102) 2N1561 2N1692 2N1562 2N1693 MAXIMUM RATINGS Collector connected to case; stud isolated from case G, = 5-6 dB @ 160 MHz P, = 0.4-0.5 W @ 160 MHz PNP germanium mesa transistors for VHF power amplifier applications. Rating Symbol }2N1561)2N1562| 2N1692 )2N1693] Unit Collector-Emitter Voltage Vor 25 25 25 25 Vde Collector-Base Voltage Vor 25 25 25 25 Vde Emitter-Base Voltage* Vep* 3 2 3 2 Vde Collector Current-Continuous I Cc 250 250 250 250 mAdc Peak 500 500 500 500 Total Device Dissipation @ T, = 25C Py 250 250 350 350 mW Derate above 25C 3.33 | 3.33 4.67 | 4.67 |mw/c Total Device Dissipation@ T, =25C | Pp 3 3 3 3 | Watts Derate above 25C 40 40 40 40 mw/? Cc Operating and Storage Junction T Yr Ts t -65 to 100 c Temperature Range & *May be exceeded provided total rated device dissipation is not exceeded. POWER GAIN versus FREQUENCY T T _ 12N1562 P, = 450mW 1693 _ |2N1561 ] P= S50mW />n1692 10 PAA Vow = ~-15DC T= 25C 7 8 \ 2N1561 2N1562 , 2N1692 2N1693 G,, POWER GAIN (DECIBELS) \ I, COLLECTOR CURRENT (mAdc) . \ \ 0 50 70 100 150-200 FREQUENCY ( MHz) 300 400 9-24 600 500 400 300 200 100 0 SAFE OPERATING AREA ABSOLUTE MAXIMUM LIMIT| Vin AREA OF 7, PERMISSIBLE OPERATION 7%) CASE OR STUD TEMPERATURE: Y = 25C 4/4 Yj 0 5 10 15 20 25 Von, COLLECTOR-BASE VOLTAGE (VOLTS) RF Transistors 2N1561, 2N1562, 2N1692, 2N1693 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol | Min | Typ | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVurg Vde A = 100 wAdc, Vor = 0) 25 - - Collector-Base Breakdown Voltage BVapo Adc Mo = 100 wAdc, i = 0) 25 - - Collector Cutoff Current Io BO pAde Voz = 10 Vdc, Ih = 0) - 1.5 10 Emitter Cutoff Current Iep O mAdc (Vir = 0.4 Vdc, I, = 0) 2N1562, 2N1693 - 5.0 - Vor = 1.0 Vde, To = 9) 2N 1561, 2N1692 - 5.0 - ON CHARACTERISTICS Collector-Emitter Saturation Voltage Vor (sat) Vde Q, = 200 mAdc, I, * 40 mAdc) 2N1561, 2N1692 6 - - 3.0 a, = 200 mAdc, In = 40 mAdc) 2N1562, 2N1693 - - 4,0 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fp MHz fl = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 2N1561, 2N1692 - 500 - Mo = 50 mAdc, Vor = 10 Vdc, f= 100 MHz) 2N1562,2N1693 - 450 - Output Capacitance Cc b pF (Von = 10 Vde, 1, = 0, f= 100 kHz) - 7 10 Small-Signal Current Gain he dB (i, = 50 mAde, V,, = 10 Vde, f= 160 MHz) 2N1561,2N1692 e - 10 - 2N 1562, 2N1693 - 9 - Extrinsic Base Resistance r' Ohms (I, = 20 mAde, Vo, = 10 Vde, f = 300 MHz) b - 25 - FUNCTIONAL TEST Power Gain Gre dB (i, = 100 mAde, VQ_ = 15 Vde, P.., = 0.5 W, f = 160 MHz) 6 - - 2N1561, 2N1692 (i, = 100 mAdc, V,,, = 15 Vdc, P= 0,4 W, f = 160 MHz) - - Cc * CE out "2N1562 52N1693 5 Power Output Pout Watt Oo = 100 mAdc, Vor = 15 Vdc, Pin = 125 mW, f = 160 MHz) 2N1561, 2N1692 0.5 - - 2N1562, 2N1693 0.4 - - 9-252N1561, 2N1562, 2N1692, 2N1693 (continued) P., POWER OUT (WATTS) P,, POWER OUT (WATTS) P., POWER OUT (WATTS) 0.8 0.6 0.4 0.2 _ oS S 0 2 a 9S t we ne S oo S a 2 eS 2 NS RF Transistors POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus COLLECTOR-EMITTER VOLTAGE 2N1561/2N1692 100 | 2 80 80 = Eve ~ $e --l-- mb. 5 goo es 2 3 Len & ow a 2 40 P, 402 2 Lo g a 3 "| Pix = 125mW_|, 8 5 > f = 160: MHz = T, = 25C 0 beet : 0 5 10 15 Vou, COLLECTOR-EMITTER VOLTAGE (VOLTS) P.,, POWER OUT (WATTS) 1.0 o oo a S b ad rey 2N1562/2N1693 100 ry = 80 ial & = 60 ] oO Ss 5 40 a ao Px = 1 5 20 f = 160 MHz Ty = 25C 0 0 5 10 15 Vox, COLLECTOR-EMITTER VOLTAGE (VOLTS) POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus POWER IN 2N1561/2N1692 100 Vex = 15Vde 80 Lf = 160.MHz T, = 25C s 8 N o 1, COLLECTOR CURRENT (mAdc) Pins POWER IN (mW) 2 S& x, COLLECTOR EFFICIENCY (%) o 25 50 75 10125 150 P,, POWER OUT (WATTS) o S & S a 2 b o re 2N1562/2N1693 Van = --15Vde f = 160 MHz T, = 25C o o a o nN o I, COLLECTOR CURRENT (mAdc) oO 0 2 50 75 100 125 150 Pia, POWER IN (mW) POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus FREQUENCY 2N1561/2N1692 90 D a Ven = 15Vde P,y = 125mW Ty = 25C 1, COLLECTOR CURRENT (mAdc) > 3 0 i 3 80 40 20 0 0 40 60 80 100 160 200 300 400 FREQUENCY (MHz) an. COLLECTOR EFFICIENCY (%) 9-26 P,, POWER OUT (WATTS) 0.8 0.6 0.4 0.2 2N1562/2N1693 = So 00 2 3 a iN) Ven = 15Vde Pry = 125mW. 20 T, = 25C 0 0 0 1 40 60 80 100 160 200 300 400 FREQUENCY (MHz) Ic, COLLECTOR CURRENT (mAdc) > Qo ny COLLECTOR EFFICIENCY (%) vn, COLLECTOR EFFICIENCY (%) xn. COLLECTOR EFFICIENCY (%)