RB715W SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 30 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1
3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 40 V
Reverse voltage leakage cur r ent IR V
R=10V 1
µA
Forward voltage VF IF=1mA
0.37 V
Diode capacitance CD V
R=1V, f=1MHz 2 pF
SOT-523
