2N3771, 2N3772, 2N3773 NPN DIFFUSED MESA SILICON POWER TRANSISTORS Collector Current of 30 Amps Safe Energy Area Specified 100 % Scope-Tested 100 % Power Cycled AQL of 0.65 at LTPD of 5.0 @eeeee#ee With MIL and JAN Specification availabe Power Dissipation @ Tc = 25 C up to 150 Watts be - 40 max 13,6 r max Testpoint for 1 Case temp. ~3,4max All dimensions are in mm TO-3 absolute maximum ratings at Tc = 25 C 2N3771 2N3772 2N3773 Collector-Base Voltage, Emitter Open-Circuit 50 V 100 V 160 V Collector-Emitter Voltage, Base Open-Circuit 40 V 60 V 140 V Emitter-Base Voltage, Collector Open-Circuit 5V 7Vv 7V Collector Current 30 A 20A 10A Base Current 75A 5A 4A Total Power Dissipation - 150 W > Operating Junction Temperature - 65 to +200 C > Storage Temperature : - 65 to +200 C > Lead Temperature 1/32 from Seating Plane for 10 s. - 235 9C > PRELIMINARY DATA SHEET: Supplement d b published ata. later date. Texas INSTRUMENTS 2317 2N3771, 2N3772, 2N3773 NPN DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25 C case temperature 2N3771 2N3772 2N3773 PARAMETER TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNIT lcEV Cotlector Cutoff Current Voce =30V, Vee=-15V 10, 10 10 mA (base-emitter junction Tc = 150 9C reverse-biased) 'cev Collector Cutoff Current VceE=50V, Vpe=1.5V 2 mA (base-emitter junction Voce =100V, Vege =1.5V 5 mA raverse-biased) Voge =140V, Veg =-1.5V 2 mA Icpo Collector Cutoff Current, Vop=50V, Ie=0 2 mA Emitter Open Vcop=100V, JIe=0 5 mA Vop=140V, IE=0 2 mA lEBO Emitter Cutoff Current Vep=5 5 mA Vep=7 5 5 mA VcEO{sus) Collector-Emitter Open Base ig =0, I = 200 MA 40 60 140 Vv Sustain Voltage IcEO Collector Cutoff Current tg =0, VceE =30V 10 mA Ig =0, Vee =50V 10 mA ig =0, Vce = 120 V 10 mA hE DC Forward Current Ic=15A*, Vope4v 15 60 Transfer Ratio Ic = 10 A*, Vce =4V 15 60 i =8 A", Voce =4V 15 60 hre DC Forward Current Ic=1A*, VcEz4V 40 40 40 Transfer Ratio VcE (sat) Collector-Emitter Saturation Ic = 15 A*, IpztSA 2.0 v Voltage I = 10A*, Ip=1.0A 1.4 Vv le =8A*, ip=O08A 1.4 v VBE Base-Emitter Voltage Ic = 15 A*, Voce =4V 2.7 Vv IG=10A*, Vog=4Vv 2.2 v Ic =8A", Vce=4V 22 Vv hte Magnitude of Common Emitter Veg =4 V, Ic=1A, Small-Signat Short-Circuit f= 50 Ke 4 4 4 Forward Current Transfer Ratio hte Common Emitter Smali-Signal Vee =4V, IG =1A, Short-Circuit Forward Current f= 1 Ke 40 40 40 Transfer Ratio Pulse test, 300 psec, rep. rate 60 cps. 2-318 TEXAS INSTRUMENTS 2N3771, 2N3772, 2N3773 NPN DIFFUSED MESA SILICON POWER TRANSISTORS MAXIMUM OPERATING AREAS FOR TYPES 2N3771 & 2N3772 Normalized must be linearly increase in Temperature ) Multiplier 50 |tmax, Cont. (2N3771) 40ps ,2N3772) Pulsed * (2N3773,2N3772) la. Ig max. Z 20 } & =z 9 2 B <0 3 2 5 3 3 8s 5 R 2 3 VCEO max.{2N Collector ~TO - Emitter Voltage (VcE) - MAXIMUM OPERATING AREAS FOR TYPE 2N3773 100 = increase in Ternperature) Pulse max.Pulsed 3 Ic - Collector Current -A Vceo max. Vee - Collectar-Emitter Voltage - V TEXAS INSTRUMENTS T) cannat assume any responsitibty for any circuits or regcesent that they are free tram aatent iatringem 2 31Q TEXAS INE TRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORC -A TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.