© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2 1Publication Order Number:
BAS21AHT1/D
BAS21AHT1G
Low Leakage
Switching Diode
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol Rating Value Unit
VRContinuous Reverse Voltage 250 Vdc
VRRM Repetitive Peak Reverse Voltage 250 Vdc
IFPeak Forward Current 200 mAdc
IFM(surge) Peak Forward Surge Current 625 mAdc
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
PDTotal Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
200
1.57
mW
mW/°C
RqJA Thermal Resistance,
Junction−to−Ambient 635 °C/W
TJ, Tstg Junction and Storage Temperature
Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 Minimum Pad
LOW LEAKAGE
SWITCHING DIODE
Device Package Shipping
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
http://onsemi.com
MARKING
DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAS21AHT1G SOD−323
(Pb−Free) 3000/Tape & Ree
l
AA M G
G
1
2
AA = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
NSVBAS21AHT1G SOD−323
(Pb−Free) 3000/Tape & Ree
l
BAS21AHT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
40
100 nAdc
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc) V(BR) 250 Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD 5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)trr 50 ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 W
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage Figure 3. Reverse Leakage
FORWARD CURRENT (mA)
7000
REVERSE CURRENT (nA)
REVERSE VOLTAGE (V)
5000
3000
5
021
6000
4000
6
5 10 20 50 100 200
1
2
3
4
TA = −55°C
30
0
TA = 155°C
TA = 25°C
TA = −55°C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
155°C
25°C
BAS21AHT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.60
0.063
0.63
0.025 0.83
0.033
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12
bE
A3
A1
A
CNOTE 5
L
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BAS21AHT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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