TLP281,TLP281-4
2010-08-27 1
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP281,TLP281-4
PROGRAMMABLE CONTROLLERS
AC/DC-INPUT MODULE
PC CARD MODEM(PCMCIA)
TLP281 and TLP281-4 is a very small and thin coupler, suitable
for surface mount assembly in applications such as PCMCIA Fax
modem, programmable controllers.
TLP281 and TLP281-4 consist of photo transistor, optically coupled
to a gallium arsenide infrared emitting diode.
z Collector-Emitter Voltage : 80 V (MIN)
z Current Transfer Ratio : 50% (MIN)
Rank GB : 100% (MIN)
z Isolation Voltage : 2500 Vrms (MIN)
z UL Recognized : UL1577 , File No. E67349
z BSI Approved : BS EN 60065: 2002,
: BS EN 60950-1: 2002
Certificate No. 8143, 8144
Pin Configuration (top view)
1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR
1,3,5,7 :ANODE
2,4,6,8 :CATHODE
9,11,13,15 :EMITTER
10,12,14,16 :COLLECTOR
1
2
4
3
TLP281 TLP281-4
8 9
1
2
3
4
5
6
7 10
11
12
13
14
15
16
TOSHIBA 11-3A1
Weight: 0.05 g (typ.)
TOSHIBA 11-10F1
Weight: 0.19 g (typ.)
Unit : mm
Unit : mm
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Current Transfer Ratio
*1: Ex. rank GB: TLP281 (GB)
(Note): Application type name for certification test, please use standard product type name, i.e.
TLP281 (GB): TLP281 , TLP281−4 (GB): TLP281−4
Current Transfer Ration (%)
(IC / IF)
IF = 5 mA, VCE = 5 V, Ta = 25°C
TYPE Classi-
fication(*1)
Min Max
Marking of Classification
Blank 50 600
Blank ,Y,YE,G,G,GR,B,BL,GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y
Rank GRL 100 200 G
Rank GRH 150 300 G
TLP281
Rank BLL 200 400 B
Blank 50 600
Blank , GB
TLP281-4
Rank GB 100 600 GB
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Absolute Maximum Ratings (Ta = 25°C)
RATING
CHARACTERISTIC SYMBOL
TLP281 TLP2814 UNIT
Forward Current IF 50 mA
Forward Current Derating IF /°C 0.7 (Ta53°C) 0.5 (Ta25°C) mA /°C
Pulse Forward Current (Note 1) IFP 1 A
Reverse Voltage VR 5 V
LED
Junction Temperature Tj 125 °C
Collector-Emitter Voltage VCEO 80 V
Emitter-Collector Voltage VECO 7 V
Collector Current IC 50 mA
Collector Power Dissipation
(1 Circuit) PC 150 100 mW
Collector Power Dissipation
Derating(Ta25°C) (1 Circuit) PC /°C 1.5 1.0 mW /°C
DETECTOR
Junction Temperature Tj 125 °C
Operating Temperature Range Topr 55 to 100 °C
Storage Temperature Range Tstg 55 to 125 °C
Lead Soldering Temperature Tsol 260 (10s) °C
Total Package Power Dissipation
(1 Circuit) PT 200 170 mW
Total Package Power Dissipation
Derating (Ta25°C) (1 Circuit) PT /°C 2.0 1.7 mW /°C
Isolation Voltage (Note 2) BVS 2500(AC,1min,R.H.60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width 100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse Current IR V
R = 5 V — 10 μA
LED
Capacitance CT V = 0, f = 1 MHz 30 — pF
Collector-Emitter
Breakdown Voltage
V(BR) CEO I
C = 0.5 mA 80 — — V
Emitter-Collector
Breakdown Voltage
V(BR) ECO I
E = 0.1 mA 7 — — V
VCE = 48 V,
Ambient Light Below
(100 x) (Note 4)
0.01
(2)
0.1
(10) μA
Collector Dark Current
(Note 3) ICEO VCE = 48 V, Ta = 85°C
Ambient Light Below
(100 x) (Note 4)
2
(4)
50
(50) μA
DETECTOR
Capacitance
(Collector to Emitter) CCE V = 0, f = 1 MHz 10 — pF
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.
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Coupled Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
50 600
Current Transfer Ratio IC / IF
IF = 5 mA, VCE = 5 V
Rank GB 100 600
%
— 60
Saturated CTR IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB 30 — —
%
IC = 2.4 mA, IF = 8 mA — — 0.4
0.2 —
Collector-Emitter
Saturation Voltage
VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB 0.4
V
Off-State Collector Current IC (off) VF = 0.7 V, VCE = 48 V 10 μA
Isolation Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Capacitance
(Input to Output) CS VS = 0 V, f = 1 MHz 0.8 pF
Isolation Resistance RS VS = 500 V, R.H.60% 5×1010 1014
AC , 1 minute 2500
AC , 1 second,in OIL 5000
Vrms
Isolation Voltage BVS
DC , 1 minute, in OIL 5000 Vdc
Switching Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Rise Time tr 2
Fall Time tf 3
Turn-On Time ton 3
Turn-Off Time toff
VCC = 10 V, IC = 2 mA
RL = 100
3
μs
Turn-On Time tON 2
Storage Time ts 25
Turn-Off Time tOFF
RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA
40
μs
(Fig.1)SWITCHING TIME TEST CIRCUIT
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TLP281
TLP281-4
TLP281
TLP281-4
*The above graphs show typical characteristic.
TLP281,TLP281-4
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*The above graphs show typical characteristic.
Forward current I
F (mA)
I
C / IF – IF
Current transfer ratio
IC / IF (%)
VCE = 10V
VCE = 5V
VCE = 0.4V
Sample B
Sample A
1000
10010 1 0.1
100
10
TLP281,TLP281-4
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*The above graphs show typical characteristic.
TLP281,TLP281-4
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RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
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GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
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