FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a 242 Ro oA @ fe (To = C) EB iE it (Ta = 25C) oh Mm A] tk MH | ve | fH GK | Vewo | Vepo | Ic Pc T Iepo $e Kit LL HE Mle es Rhye} os 4 7 | Ape hie hee hoe | fat Cor | he mo hig | hro | hob * | fr Rielreal*| (V) fF (VW) | Gm) | GnW) | CC) GA) | Vea) Vee(V)[Ic(mA)| Vea(V)|fe(mA)} Afe* | (a) |0x10-+)| G2) | (Me), | @F) | (a) | 2SD350A| T) PA SiMe] 1500] 5 | 5A |,,224.) 115 | 100 | 750 | >3 | 10 | 4A SIS 102 380A) | # | 1500] 5 | 5A |, 50M.) 130 | ima j 1500] >7.5] 10 | 5A U<0.9x8 102 asp4o1a} a a) PA Si.T}] 200] 5 | 2A |,22W.) 150 | 50 | 150 | 90 | 10 | 400 | 10 | 400 5 * 268 | 2585464, * " 4ozal ov | # | 200 | 5 | 2a [254 150 | 50 | 150 | 90 | to | 400 | 10 | 400 5 267 |2SB5474, 476A\H an] 8 | 7 | 5 | 4a | 40M} 150 | 1 | 50 |60~320) 4 | 1A | 4 | 500 7* 268 | PE, " 666A) " SiE | 120 5 50 | 900 | 150 | 10 | 100 | 60~320/ 5 10 5 | 10 140 3 251 | 2SBE46A ge7al # | # 1 120; 5 | 1A | 900 | 150 | 10 | 100 J6o~320} 5 | 150 | 5 | 150 wo*) 12 251] See " 668A; # " " 180 5 50 | 1w | 150 | 10 | 160 | 60~320] 5 10 10 | 10 140") 3.5 160 | 2536484 60a, | | 180 | 5 | 15a], 20M.) 150 f 10 | 160 J 60~320} 5 | 150 | 5 | 500 140") 14 160 | SBE", o7BaAlHe Fl SiEMe} 80 | 5 | 3a {25.1 150 | 200 | 80 | 2000) 3 | 500 | 3 |-1.5A {eects 268| yy by erga # | on 1 90 | 5 | 44 | f0W 1 150 | 200 | 90 | 3000/ 3 | 1A [ 3 | 3a fe te 268 | ray by " meal | + siT| 250 | 5 | 3A | 80M | 150 | ima | 200 |25~200) 5 | 1A 102 esp7s6a} HH 3| AF SiE| 140 | 5 50 | 750 | 150 | 0.5 | 100 |250~500) 12 2 wz | -5 350 *) 1.6 251 PSB26A gaa) | PA SiT| 120} 5 | 6A |OOW.) 150 | 1ma] 100 Joo~20! 5 | 1A | 5 | 1A | iy=0.4uS 50 * 332 [SBA y gaa, ov | om | 120 | 5 | 7A {80M ) 150 | ama} 100 }60~200) 5 | 1A | 5 | 1A |w=0.4uS 50 * 332 SB, B3BA)ES OK} 9 SiEP| 80 5 | 2A |, 254.) 150 | ima} 80 }*988o0} 4 | 1A ton=0.4uS, toss 4 eS 268 {yy b> n g37Al ov | } 80) 5 | 4a | fOW.) 150 | 200 | 80 |296355] 3 | 3A ton=0.34S, tofs= 4 eS 268 | -V> by 837B) 7 1" | a00 | 5 | 4a [OW ) a50 | 200 | 100 4796855} 3 | 3A ton=0.34S, toi = 4 uS 268 | ene by # B74Al ou | ow " 60 5 | 1A | 500 | 125 J 0.1 | 20 | 160 | 10 | 500 J 10 | 50 200 *) 20 336 PSBzEA ae . * 2S B624 28D506 | Hitt] AF SiE} 30 | 5 | 700 | 200 | 150 | 0.1 | 30 | 200 | 1 | 100] 6 | 10 wo*| 12 176 Poet y wm45al on | om sit] 150 | 5 | 10a [220%] 150 | 50 | 140 | 80 | 5 | 2A] 5 | 200 15 *| 270 | 340 PSB254,, "T45B) oe | | 10 | 8 | 10a |220W) 150 | so | 140 | so | 5 | 24 | 5 | 200 15 *) 270 340 PSB25B, " 746A 8 fo | 220}. 5 | 10a | 200") iso | so | 18 | 80 | 5 | 2A | 5 | 200 15 *) 300 265 PSB2064,, "794A, 0 | PASW siE| 70 | 5 | 3A |fO.) 150} 1 | 45 | 100 | 5 | 500 | 5 | 100 60 *| 40 225 PSBUMA 7 : no<300mV * SB 2SD601A] #& F | AF Si.EP| 60 7 | 100 | 200 | 125 1 10 | 90~650| 10 2 10 | 2 | (Ov 78A Ro 100Ke, 4e<eoas) | 150 "| 3.5 176 PSB 602A, 9 | 8 60 5 | 500 | 200 | 125 | 0.1 | 20 | 160 | 10 | 150 | 10 | 50 200 | 6 176 [SBO%,