CPH6412
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID6A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 24 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
✕0.8mm)
1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=3A 4.2 6 S
RDS(on)1 ID=3A, VGS=10V 25 33 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=1.5A, VGS=4.5V 35 49 mΩ
RDS(on)3 ID=1.5A, VGS=4V 37 52 mΩ
Marking : KN Continued on next page.
Ordering number : EN7607A
CPH6412 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH6412/D
CPH6412
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 690 pF
Output Capacitance Coss VDS=10V, f=1MHz 160 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 88 pF
Turn-ON Delay Time td(on) See sepcified Test Circuit. 11 ns
Rise T ime trSee specified Test Circuit. 45 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 60 ns
Fall T ime tfSee specified Test Circuit. 35 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 16 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 3.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 2.4 nC
Diode Forward Voltage VSD IS=6A, VGS=0V 0.84 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7018A-003
1
2
3
4
5
6
8
7
0 0.2 0
6
5
4
3
2
1
00.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
VGS=2.0V
2.5V
10V
IT06300
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
25
°
C
--25°C
IT06301
6.0V
3.0V
4.5V
3.5V
4.0V
VDS=10V
Ta=75°C
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
321
645
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=3A
RL=5Ω
VDD=15V
VOUT
CPH6412
VIN
10V
0V
VIN
CPH6412
Rev.0 I Page 3 of 4 I www.onsemi.com
0.01
0.1
7
5
3
2
1.0
7
5
3
2
10
7
5
3
2
10
100
1000
7
5
3
2
7
5
3
2
7
5
3
2
1.0
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
td(on)
td(off)
tr
tf
IT06306
Drain Current, ID -- A
IT06304
23 57
0.1 1.0 23 57
10
0.1
1.0
10
2
3
5
7
7
5
3
2
2
Forward T ransfer Admittance,
y
fs -- S
yfs -- ID
IT06305
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
VGS=0V
25°C
Ta=75
°
C
051015 20 25 30
10
100
1000
3
5
2
2
7
7
5
3
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
f=1MHz
IT06307
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT06308
0024681012141618
10
9
8
7
6
5
4
3
2
1
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
0.01
2
3
5
7
10
1.0
2
3
5
7
2
3
5
7
0.1
2
3
5
23 357
1.0
23 5723 57
0.10.01 25
IT06309
VDD=15V
VGS=10V
23 57
0.01 0.1 1.0
23 57 23 57
10
75
°C
--25
°
C
Ta=25
°
C
VDS=10V
--25
°
C
VDS=10V
ID=5A
Ciss
Coss
Crss
IDP=24A
Operation in this
area is limited by RDS(on).
PW≤10µs
DC operation
100ms
10ms
1ms
100µs
ID=6A
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
10
--60 --40 --20 0 20 40 60 80 100 120 140 160
02468101214161820
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT06302
80
70
60
50
40
30
20
10
0
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT06303
80
70
60
50
40
30
20
10
0
3.0A
ID=1.5A
Ta=25°C
VGS=4V, ID=1.5A
VGS=4.5V, ID=1.5A
VGS=10V, ID=3.0A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ciss, Coss, Crss -- VDS
CPH6412
Rev.0 I Page 4 of 4 I www.onsemi.com
020406080100120 140 160
0
0.5
1.0
1.5
1.6
2.0
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT06310
When mounted on ceramic substrate (900mm
2
✕0.8mm)
CPH6412/D
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