February 2014.Version 3.0 MagnaChip Semiconductor Ltd.
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MPSC2N100U40 400V FRD Module
Absolute Maximum Ratings @Tc = 25oC (Per Leg)
Characteristics
Conditions
Symbol
Rating
Repetitive Peak Reverse Voltage
VRRM
400
V
Average Forward Current
TC=25oC
Resistive Load
IF(AV)
200
A
TC=100oC
100
A
Surge(non-repetitive) Forward Current
One Half Cycle at 60Hz,
Peak Value
IFSM
2000
A
I2t for Fusing
Value for One Cycle Current,
tw = 8.3ms, Tj= 25℃ Start
I2t
16.7* 103
Junction Temperature
TJ
-40 ~ 150
Storage Temperature
Tstg
-40 ~ 125
Mounting Torque
-
1.45
Terminal Torque
Typical Including Screws
-
1.45
Isolation Voltage(Terminal to Case)
@AC 1 minutes, Tc = 125oC
Visol
2,500
Isolation Voltage(Diode to Diode)
@DC1 minutes, Tc = 125oC
Visol
1,500
Weight
-
30
MPSC2N100U40
400V FRD Module
General Description
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical
systems.
These diode modules are ideally suited for power converters,
Motors drives and other applications where switching losses
are significant portion of the total losses.
Features
Repetitive Reverse Voltage : VRRM= 400V
Low Forward Voltage : VF(typ.) = 1.0V
Average Forward Current : IF(Av.)=100A @TC=100℃
Ultra-Fast Reverse Recovery Time : trr(typ.) = 35ns
Extensive Characterization of Recovery Parameters
Reduced EMI and RFI
Isolation Type Package
Applications
High Speed & High Power converters, Welders
Various Switching and Telecommunication Power Supply
SOT-227
Equivalent Circuit
E301932
February 2014.Version 3.0 MagnaChip Semiconductor Ltd.
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MPSC2N100U40 400V FRD Module
Electrical Characteristics @Tc = 25oC(unless otherwise specified)
Characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode Breakdown Voltage
IR=100uA
VR
400
-
-
V
Diode Maximum Forward Voltage
IF=100A
TC=25℃
VFM
-
1.0
1.3
V
TC=125℃
-
0.9
-
Maximum Reverse Leakage Current
Tc=100℃,
VRRM applied
TC=125℃
IRRM
-
-
1.0
mA
Maximum Reverse Recovery Current
IF =100A,VR=50V
di/dt = -200A/uS
TC=25℃
IRM
-
8
-
A
TC=125℃
18
Diode Reverse Recovery Time
IF =100A,VR=50V
di/dt = -200A/uS
TC=25℃
trr
-
45
-
ns
TC=125℃
-
90
-
Thermal Characteristics
Characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistance(Isolation Type)
Junction to Case(Per Diode)
Rth(j-c)
-
-
0.34
℃/W
Junction to Case(Module)
-
-
0.20
February 2014.Version 3.0 MagnaChip Semiconductor Ltd.
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MPSC2N100U40 400V FRD Module
Fig.1 Typical Forward Voltage Drop
vs. Instantaneous Forward Current
Fig.2 Typical Reverse Recovery Time
Vs. –di/dt
Fig.3 Transient Thermal Impedance(Zthjc)
Characteristics
Fig.4 Forward Current Derating Curve
0.0 0.5 1.0 1.5
0
50
100
150
200
250
300
Forward Current,IF[A]
TC=25℃
TC=125℃
Forward Voltage Drop,VF[V]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-4
1E-3
0.01
0.1
1
TC=25℃
Thermal Response Zthjc[℃/W]
Rectangular Pulse Duration Time[sec]
020 40 60 80 100 120 140 160
0
50
100
150
200
250
DC
Average Forward Current,IF(AVG)[A]
Case Temperatute, Tc[℃]
200 400 600
0
25
50
75
Reverse Recovery Time[ns]
di/dt[A/us]
February 2014.Version 3.0 MagnaChip Semiconductor Ltd.
4
MPSC2N100U40 400V FRD Module
Package Dimension
SOT-227
Dimensions are in millimeters, unless otherwise specified
TBD
TBD
February 2014.Version 3.0 MagnaChip Semiconductor Ltd.
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MPSC2N100U40 400V FRD Module
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.