MC1413D - ON SEMICONDUCTOR

May, 2006 − Rev.6 1Publication Order Number:

2N6027/D

2N6027, 2N6028

Preferred Device

Programmable

Unijunction Transistor

Programmable Unijunction

Transistor Triggers

Designed to enable the engineer to “program’’ unijunction

characteristics such as RBB, h, IV, and IP by merely selecting

two resistor values. Application includes thyristor−trigger, oscillator,

pulse and timing circuits. These devices may also be used in special

thyristor applications due to the availability of an anode gate. Supplied

in an inexpensive TO−92 plastic package for high−volume

requirements, this package is readily adaptable for use in automatic

insertion equipment.

Features

•Programmable − RBB, h, IV and IP

•Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA

•Low Gate to Anode Leakage Current − 10 nA Maximum

•High Peak Output Voltage − 11 V Typical

•Low Offset Voltage − 0.35 V Typical (RG = 10 kW)

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

PUTs

40 VOLTS, 300 mW

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

TO−92 (TO−226AA)

CASE 029

STYLE 16

PIN ASSIGNMENT

Gate

Cathode

Anode

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2N602x = Device Code

x = 7 or 8

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

MARKING DIAGRAM

602x

AYWW G

(Note: Microdot may be in either location)

2N6027, 2N6028

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Power Dissipation*

Derate Above 25°CPF

1/qJA 300

4.0 mW

mW/°C

DC Forward Anode Current*

Derate Above 25°CIT150

2.67 mA

mA/°C

DC Gate Current* IG"50 mA

Repetitive Peak Forward Current

100 ms Pulse Width, 1% Duty Cycle

20 ms Pulse Width, 1% Duty Cycle*

ITRM 1.0

2.0

Non−Repetitive Peak Forward Current

10 ms Pulse Width ITSM 5.0 A

Gate to Cathode Forward Voltage* VGKF 40 V

Gate to Cathode Reverse Voltage* VGKR *5.0 V

Gate to Anode Reverse Voltage* VGAR 40 V

Anode to Cathode Voltage* (Note 1) VAK ±40 V

Capacitive Discharge Energy (Note 2) E 250 mJ

Power Dissipation (Note 3) PD300 mW

Operating Temperature TOPR −50 to +100 °C

Junction Temperature TJ−50 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended O p e r a t i n g Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

*Indicates JEDEC Registered Data

1. Anode positive, RGA = 1000 W

Anode negative, RGA = open

2. E = 0.5  CV2 capacitor discharge energy limiting resistor and repetition.

3. Derate current and power above 25°C.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 75 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

Maximum Lead Temperature for Soldering Purposes

(t1/16″ from case, 10 seconds maximum) TL260 °C

2N6027, 2N6028

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Fig. No. Symbol Min Typ Max Unit

Peak Current*

(VS = 10 Vdc, RG = 1 MW) 2N6027

2N6028

(VS = 10 Vdc, RG = 10 kW) 2N6027

2N6028

2,9,11 IP−

−

1.25

0.08

4.0

0.70

2.0

0.15

5.0

1.0

Offset Voltage*

(VS = 10 Vdc, RG = 1 MW) 2N6027

2N6028

(VS = 10 Vdc, RG = 10 kW) (Both Types)

1 VT0.2

0.2

0.70

0.50

0.35

1.6

0.6

Valley Current*

(VS = 10 Vdc, RG = 1 MW) 2N6027

2N6028

(VS = 10 Vdc, RG = 10 k W) 2N6027

2N6028

(VS = 10 Vdc, RG = 200 W) 2N6027

2N6028

1,4,5 IV−

−

1.5

1.0

150

−

Gate to Anode Leakage Current *

(VS = 40 Vdc, T A = 25°C, Cathode Open)

(VS = 40 Vdc, T A = 75°C, Cathode Open)

− IGAO −

−1.0

3.0 10

−

nAdc

Gate to Cathode Leakage Current

(VS = 40 Vdc, Anode to Cathode Shorted) − IGKS − 5.0 50 nAdc

Forward Voltage*

(IF = 50 mA Peak) (Note 4) 1,6 VF− 0.8 1.5 V

Peak Output Voltage*

(VG = 20 Vdc, CC = 0.2 mF) 3,7 Vo6.0 11 − V

Pulse Voltage Rise Time

(VB = 20 Vdc, CC = 0.2 mF) 3 tr− 40 80 ns

*Indicates JEDEC Registered Data

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

Programmable Unijunction

with Program" Resistors

R1 and R2

1A −

VAK

+VB

R1 + R2

− VS = VB

VAK

RG = R1 R2

R1 + R2

Equivalent Test Circuit for

Figure 1A used for electrical

characteristics testing

(also see Figure 2)

1B −

Adjust

for

Turn−on

Threshold

100 k

1.0%

2N5270

0.01 mF

RG = R/2

VS = VB/2

(See Figure 1)

−

IP (SENSE)

100 mV = 1.0 nA

Scope

Put

Under

Test

510 k 16 k

27 k

20 W

+VB

6.0 V

0.6 V

IC − Electrical Characteristics

−VP

VT = VP − VS

IGAO

Figure 1. Electrical Characterization

Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit

2N6027, 2N6028

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VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

I , VALLEY CURRENT ( A)

100

1000

1051520

500

0−50 +50 +100

100

RG = 10 kW

100 kW

1 MW

−25 +25 +75

RG = 10 kW

100 kW

1 MW

TYPICAL VALLEY CURRENT BEHAVIOR

IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (V)

0.1

0.05

0.02

0.01

0.2

0.5

1.0

0.020.01 0.05 0.1

5.0

1002030

TA = 25°C

5.0 15 25

CC = 0.2 mF

1000 pF

V , PEAK OUTPUT VOLTAGE (V)

TA = 25°C

(SEE FIGURE 3)

I , VALLEY CURRENT ( A)

2.0

5.0

0.2 2.00.5 1.0 5.0 35 40

Circuit Symbol

R1 + R2

RBB = R1 + R2

h =

Equivalent Circuit

with External Program"

Resistors R1 and R2

Typical Application

Figure 4. Effect of Supply Voltage Figure 5. Effect of Temperature

Figure 6. Forward Voltage Figure 7. Peak Output Voltage

Figure 8. Programmable Unijunction

, PEAK FORWARD VOLTAGE (V)

2N6027, 2N6028

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VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

I , PEAK CURRENT ( A)

1.0

0.5

0.3

0.2

0.1

2.0

3.0

5.0

105.0 15 20

1.0

0.5

0.2

0.1

2.0

5.0

0−50 +50 +100

100

TA = 25°C

(SEE FIGURE 2)

RG = 10 kW

100 kW

VS = 10 V

(SEE FIGURE 2)

1.0 MW

−25 +25 +75

RG = 10 kW

100 kW

1.0 MW

I , PEAK CURRENT ( A)

TYPICAL PEAK CURRENT BEHAVIOR

2N6027

VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)

I , PEAK CURRENT ( A)

0.1

0.05

0.03

0.02

0.01

0.2

0.3

0.5

1.0

105.0 15 20

0.1

0.05

2.0

0.02

0.01

0.2

5.0

0.5

1.0

0−50 +50 +100

TA = 25°C

(SEE FIGURE 2)

RG = 10 kW

100 kW

VS = 10 V

(SEE FIGURE 2)

1.0 MW

−25 +25 +75

RG = 10 kW

100 kW

1.0 MW

I , PEAK CURRENT ( A)

2N6028

0.07

0.7

Figure 9. Effect of Supply Voltage and RGFigure 10. Effect of Temperature and RG

Figure 11. Effect of Supply Voltage and RGFigure 12. Effect of Temperature and RG

ORDERING INFORMATION

U.S. European Equivalent Shipping†Description of T O−92 Tape Orientation

2N6027

2N6027RL1

2N6027RL1G

5000 Units / Box N/A − Bulk

2N6027G

2N6028

2N6028G

2N6027RLRA

2000 / Tape & Reel Round side of TO−92 and adhesive tape visible

2N6027RLRAG

2N6028RLRA

2N6028RLRAG

2N6028RLRM

2000 / Tape & Ammo Box

Flat side of TO−92 and adhesive tape visible

2N6028RLRMG

2N6028RLRP Round side of TO−92 and adhesive tape visible

2N6028RLRPG

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*The “G’’ suffix indicates Pb−Free package available.

2N6027, 2N6028

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PACKAGE DIMENSIONS

TO−92 (TO−226AA)

CASE 029−11

ISSUE AL

STYLE 16:

PIN 1. ANODE

2. GATE

3. CATHODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

2N6027/D

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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

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