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IRF6643TRPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF6643TRPbF DirectFET Medium Can Tape and Reel 4800 IRF6643TRPbF
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 35
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.0 A
IDM Pulsed Drain Current 76
EAS Single Pulse Avalanche Energy 50 mJ
IAR Avalanche Current 7.6 A
PD @TC = 25°C Power Dissipation 89
PD @TA = 25°C Power Dissipation 2.8 W
PD @TA = 70°C Power Dissipation 1.8
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
DIGITAL AUDIO MOSFET
DirectFET® ISOMETRIC
MZ
VDS 150 V
RDS(ON) typ. @ VGS = 10V 29 mΩ
Qg typ. 39 nC
RG(int) typ. 0.9 Ω
Key Parameters
Features
• Latest MOSFET silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant, halogen-free
• Lead-free (qualified up to 260°C reflow)
Notes through are on page 9
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IRF6643TRPbF
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 29 34.5 mΩ VGS = 10V, ID = 7.6A
VGS(th) Gate Threshold Voltage 3.0 4.0 4.9 V VDS = VGS, ID = 150µA
ΔVGS(th) Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 250 VDS = 120V, VGS = 0V, TJ=125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 0.8 –––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 16 ––– ––– S VDS = 10V, ID = 7.6A
Qg Total Gate Charge ––– 39 55
Qgs1 Pre-VthGate-to-Source Charge ––– 9.6 ––– V
DS = 75V
Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– V
GS = 10V
Qgd Gate-to-Drain Charge ––– 11 17 nC ID = 7.6A
Qgodr Gate Charge Overdrive ––– 16 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 13 –––
td(on) Turn-On Delay Time ––– 9.2 –––
tr Rise Time ––– 5.0 ––– ns VDD = 75V, VGS = 10V
td(off) Turn-Off Delay Time ––– 13 ––– ID = 7.6A
tf Fall Time ––– 4.4 –––
Ciss Input Capacitance ––– 2340 ––– VGS = 0V
Coss Output Capacitance ––– 300 ––– V
DS = 25V
Crss Reverse Transfer Capacitance ––– 61 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1950 ––– VGS=0V, VDS=1.0V, ƒ=1.0MHz
Coss Output Capacitance ––– 140 ––– VGS=0V, VDS=80V, ƒ=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 58
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 76 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 7.6A, VGS = 0V
trr Reverse Recovery Time ––– 67 100 ns TJ = 25°C, IF = 7.6A,VDD = 50V
Qrr Reverse Recovery Charge ––– 190 280 nC di/dt = 100A/µs
Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Ambient ––– 45
RθJA Junction-to-Ambient 12.5 –––
RθJA Junction-to-Ambient 20 –––
°C/W
RθJC Junction-to-Case ––– 1.4
RθJ-PCB Junction-to-PCB Mounted 1.0 –––
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IRF6643TRPbF
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
Tj = 25°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
≤60µs PULSE WIDTH
Tj = 150°C
7.0V
VGS
TOP 15V
10V
8.0V
BOTTOM 7.0V
4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current
(Α)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 10V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
Typical RDS(on) (Normalized)
ID = 7.6A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 10203040
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= 7.6A
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IRF6643TRPbF
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Typical Threshold Voltage vs.
Junction Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
TJ = -40°C
0.1 1.0 10.0 100.0 1000.0
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
25 50 75 100 125 150
TJ , Ambient Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
ID , Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
ID = 150µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
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IRF6643TRPbF
Fig 12. Typical On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 15a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 14. Maximum Avalanche Energy vs. Drain Current
tp
V
(BR)DSS
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP
1.5A
3.0A
BOTTOM
15A
010 20 30 40 50
ID, Drain Current (A)
25
30
35
40
45
Typical RDS(on) (mΩ)
TJ= 25°C
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
46810 12 14 16
VGS, Gate -to -Source Voltage (V)
20
30
40
50
60
70
RDS(on)
, Drain-to -Source On Resistance (m
Ω)
ID = 7.6A
TJ = 25°C
TJ = 125°C
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IRF6643TRPbF
DirectFET® Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8 www.irf.com © 2013 International Rectifier May 31, 2013
IRF6643TRPbF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DirectFET® Outline Dimension, MZ Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DirectFET® Part Marking
IMPERIAL
MAX
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
0.616
0.020
0.08
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
0.676
0.080
0.17
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
DIMENSIONS
METRIC
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
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IRF6643TRPbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
DirectFET® Tape & Reel Dimension (Showing component orientation).
Qualification Information†
Moisture Sensitivity Level DirectFET
MSL1
(per JEDEC J-STD-020D††)
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 7.6A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
Rθ is measured at TJ of approximately 90°C.
Revision History
Date Comments
05/30/2013 Converted the data sheet to Class-D Audio formatting template. No change in electrical
parameters.
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
DIMENSIONS
METRIC IMPERIAL
LOADED TAPE FEED DIRECTION
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 1000 parts on 7"
reel, order IRF6643TR1PBF
STANDARD OPTION (QTY 4800)
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
METRIC IMPERIAL
TR1 OPTION (QTY 1000)
IMPERIAL
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
