1. Product profile
1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT404 (D2 PAK)
surface-mountable plastic package intended for use in general purpose bidirectional
switching and phase contr ol applications. This sensitive gate "series E" triac is intended to
be interfaced directly to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
1.2 Features and benefits
Direct triggering from low power
drivers and logic ICs
High blocking voltage capability
Planar passivated for voltage
ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
1.3 Applications
General purpose phase control General purpose switching
1.4 Quick reference data
BT139-800E
4Q Triac
Rev. 04 — 24 March 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state
voltage --800V
ITSM non-repetitive peak
on-state current full sine wave; Tj(init) =2C;
tp= 20 ms; see Figure 4;
see Figure 5
--155A
IT(RMS) RMS on-state current full sine wave; Tmb 99 °C;
see Figure 1; see Figure 2;
see Figure 3
--16A
Static characteristics
IGT gate trigger current VD=12V; I
T= 0.1 A; T2+ G+;
Tj= 25 °C; see Figure 7 -2.510mA
VD=12V; I
T= 0.1 A; T2+ G-;
Tj= 25 °C; see Figure 7 -410mA
VD=12V; I
T= 0.1 A; T2- G-;
Tj= 25 °C; see Figure 7 -510mA
VD=12V; I
T= 0.1 A; T2- G+;
Tj= 25 °C; see Figure 7 -1125mA
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 2 of 14
NXP Semiconductors BT139-800E
4Q Triac
2. Pinning information
3. Ordering information
Table 2. Pinning info rmation
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
SOT78 (TO-220AB)
2 T2 main terminal 2
3 G gate
mb T2 mounti n g ba se ; main terminal 2
12
mb
3
s
ym051
T1
G
T2
Table 3. Orderi ng information
Type number Package
Name Description Version
BT139-800E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB SOT78
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 3 of 14
NXP Semiconductors BT139-800E
4Q Triac
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb 99 °C; see Figure 1;
see Figure 2; see Figure 3 -16A
ITSM non-repetitive peak on-state
current full sine wave; Tj(init) =2C; t
p= 20 ms;
see Figure 4; see Figure 5 - 155 A
full sine wave; Tj(init) =2C; t
p= 16.7 ms - 170 A
I2tI
2t for fusing tp= 10 ms; sine-wave pulse - 120 A2s
dIT/dt rate of rise of on-state current IT=20A; I
G=0.2A; dI
G/dt = 0.2 A/µs;
T2+ G+ -50A/µs
IT=20A; I
G=0.2A; dI
G/dt = 0.2 A/µs;
T2+ G- -50A/µs
IT=20A; I
G=0.2A; dI
G/dt = 0.2 A/µs;
T2- G- -50A/µs
IT=20A; I
G=0.2A; dI
G/dt = 0.2 A/µs;
T2- G+ -10A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
Fig 1. RMS on-state current as a function of surge
duration; maximum values Fig 2. RMS on-state current as a function of mounting
base temperature; ma ximum values
surge duration (s)
102101101
001aab090
20
30
10
40
50
IT(RMS)
(A)
0
Tmb (°C)
50 150100050
001aab091
10
5
15
20
IT(RMS)
(A)
0
(1)
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 4 of 14
NXP Semiconductors BT139-800E
4Q Triac
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values.
Fig 4. Non-repetitive peak on-state curre nt as a function of the number of sinusoidal current cycles; maximum
values
IT(RMS) (A)
0 2015105
001aab093
5
15
25
Ptot
(W)
0
113
101
95
Tmb(max)
(°C)
125
30
10
20
107
119
α =
180
60
90
120
α
α
001aab102
80
40
120
160
ITSM
(A)
0
n
1 103
102
10
T
ITITSM
t
Tj(initial) = 25 °C max
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 5 of 14
NXP Semiconductors BT139-800E
4Q Triac
Fig 5. Non-repetitive peak on-state curre nt as a function of pulse width; maximum values
001aab092
T (ms)
102102
101011
102
103
ITSM
(A)
10
T
ITITSM
t
Tj(initial) = 25 °C max
(2)
(1)
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 6 of 14
NXP Semiconductors BT139-800E
4Q Triac
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base half cycle; see Figure 6 --1.7K/W
full cycle; see Figure 6 --1.2K/W
Rth(j-a) thermal resistance from junction to
ambient in free air - 60 - K/W
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
001aab098
101
102
1
10
Zth(j-mb)
(K/W)
103
tp (s)
105110101
102
104103
tp
PD
t
(2)
(1)
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 7 of 14
NXP Semiconductors BT139-800E
4Q Triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD=12V; I
T= 0.1 A; T2+ G+;
Tj= 25 °C; see Figure 7 -2.510mA
VD=12V; I
T= 0.1 A; T2+ G-;
Tj= 25 °C; see Figure 7 -410mA
VD=12V; I
T= 0.1 A; T2- G-;
Tj= 25 °C; see Figure 7 -510mA
VD=12V; I
T= 0.1 A; T2- G+;
Tj= 25 °C; see Figure 7 -1125mA
ILlatching current VD=12V; I
G= 0.1 A; T2+ G+;
Tj= 25 °C; see Figure 8 -3.230mA
VD=12V; I
G= 0.1 A; T2+ G-;
Tj= 25 °C; see Figure 8 - 1640mA
VD=12V; I
G= 0.1 A; T2- G-;
Tj= 25 °C; see Figure 8 -430mA
VD=12V; I
G= 0.1 A; T2- G+;
Tj= 25 °C; see Figure 8 -5.540mA
IHholding current VD=12V; T
j=2C; see Figure 9 -445mA
VTon-stat e vo ltage IT=20A; T
j=2C; see Figure 10 -1.21.6V
VGT gate trigger voltage VD=12V; I
T= 0.1 A; Tj=2C;
see Figure 11 -0.71.5V
VD= 400 V; IT=0.1A; T
j= 125 °C;
see Figure 11 0.25 0.4 - V
IDoff-state current VD= 800 V; Tj= 125 °C - 0.1 0.5 mA
Dynamic character i stics
dVD/d t rate of rise of off-st a te voltag e VDM =536V; T
j= 125 °C;
exponential waveform; gate open
circuit
-50-V/µs
tgt gate-controlled turn-on time ITM =20A; V
D=800V; I
G=0.1A;
dIG/dt = 5 A/µs -2s
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 8 of 14
NXP Semiconductors BT139-800E
4Q Triac
Fig 7. Normalized gate trigger cu rrent as a function of
junction temperature Fig 8. Normalized latching current as a function of
junction temperature
Fig 9. Normalized holding current as a function of
junction temperature Fig 10. On-state current as a function of on-state
voltage
Tj (°C)
50 150100050
001aab448
1
2
3
IGT(Tj)
IGT(25°C)
0
(1)
(2)
(3)
(4)
Tj (°C)
50 150100050
001aab100
1
2
3
0
IL
IL(25°C)
Tj (°C)
50 150100050
001aab099
1
2
3
0
IH
IH(25°C)
001aab094
VT (V)
0321
20
30
10
40
50
IT
(A)
0
(1) (3)(2)
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 9 of 14
NXP Semiconductors BT139-800E
4Q Triac
Fig 11. Normalized gate trigger voltage as a function of junction temperature
Tj (°C)
50 150100050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 10 of 14
NXP Semiconductors BT139-800E
4Q Triac
7. Package outline
Fig 12. Package outline SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78 SC-46
3-lead TO-220AB
SOT7
8
08-04-23
08-06-13
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT A
mm 4.7
4.1
1.40
1.25
0.9
0.6
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0
12.8
3.30
2.79
3.8
3.5
A1
DIMENSIONS (mm are the original dimensions)
P
lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
0 5 10 mm
scale
b b1(2)
1.6
1.0
c D
1.3
1.0
b2(2) D1E e
2.54
L L1(1) L2(1)
max.
3.0
p q
3.0
2.7
Q
2.6
2.2
D
D1
q
p
L
123
L1(1)
b1(2)
(3×)
b2(2)
(2×)
ee
b(3×)
AE
A1
c
Q
L2(1)
mounting
base
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 11 of 14
NXP Semiconductors BT139-800E
4Q Triac
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BT139-800E v.4 20110324 Product data sheet - BT139_SER_E v.3
Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BT139-800E separated from data sheet BT139_SER_E v.3.
BT139_SER_E v.3 20040923 Product data sheet - BT139_SERIES_E v.2
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 12 of 14
NXP Semiconductors BT139-800E
4Q Triac
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) de scribed in this document may have changed since this do cument was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict wit h the short data sheet, the
full data sheet shall pre va il.
Product specifica t ion The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incide ntal,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for useNXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contai ns data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BT139-800E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 24 March 2011 13 of 14
NXP Semiconductors BT139-800E
4Q Triac
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for aut omotive use. It i s neither qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting f rom customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BT139-800E
4Q Triac
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 March 2011
Document identifier: BT139-800E
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13