BUZ31H - Infineon Technologies

Rev. 2.5 Page 1 2009-11-09

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Normal Level

Pin 1 Pin 2 Pin 3

GDS

Type

V

DS

I

D

R

DS(on)Package Pb-free

BUZ 31 H 200 V 14.5 A 0.2

Ω

PG-TO-220-3 Yes

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current

T

C = 30 ˚C

I

D 14.5

A

Pulsed drain current

T

C = 25 ˚C

I

Dpuls 58

Avalanche current,limited by

T

jmax

I

AR 13.5

Avalanche energy,periodic limited by

T

jmax

E

AR 9 mJ

Avalanche energy, single pulse

I

D = 14.5 A,

V

DD = 50 V,

R

GS = 25

Ω

L

= 1.42 mH,

T

j = 25 ˚C

E

AS

200

Gate source voltage

V

GS

±

20 V

ESD-Sensitivity HBM as per MIL-STD 883 Class 1

Power dissipation

T

C = 25 ˚C

P

tot 95

W

Operating temperature

T

j -55 ... + 150 ˚C

Storage temperature

T

stg -55 ... + 150

Thermal resistance, chip case

R

thJC

≤

1.32 K/W

Thermal resistance, chip to ambient

R

thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ 31 H

Rev. 2.5 Page 2 2009-11-09

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA,

T

j = 25 ˚C

V

(BR)DSS 200 --

V

Gate threshold voltage

V

GS=

V

DS,

I

D = 1 mA

V

GS(th) 2.1 3 4

Zero gate voltage drain current

V

DS = 200 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 200 V,

V

GS = 0 V,

T

j = 125 ˚C

I

DSS

-

10

0.1

100

1

µA

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS - 10 100

nA

Drain-Source on-resistance

V

GS = 5 V,

I

D = 9 A

R

DS(on) - 0.16 0.2

Ω

BUZ 31 H

Rev. 2.5 Page 3 2009-11-09

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2 *

I

D *

R

DS(on)max,

I

D = 7 A

g

fs 5 12 -

S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss - 840 1120

pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss -180270

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss -95 150

Turn-on delay time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

d(on)

- 12 20

ns

Rise time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

r

-50 75

Turn-off delay time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

d(off)

-150 200

Fall time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

f

- 60 80

BUZ 31 H

Rev. 2.5 Page 4 2009-11-09

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

C = 25 ˚C

I

S-- 14.5

A

Inverse diode direct current,pulsed

T

C = 25 ˚C

I

SM -- 58

Inverse diode forward voltage

V

GS = 0 V,

I

F = 29A

V

SD - 1.1 1.6

V

Reverse recovery time

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

t

rr - 170-

ns

Reverse recovery charge

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

Q

rr - 1.1-

µC

BUZ 31 H

Rev. 2.5 Page 5 2009-11-09

Power dissipation

P

tot =

ƒ

(

T

C)

020 40 60 80 100 120 ˚C 160

T

C

0

10

20

30

40

50

60

70

80

W

100

P

tot

Drain current

I

D =

ƒ

(

T

C)

parameter:

V

GS

≥

10 V

020 40 60 80 100 120 ˚C 160

T

C

0

1

2

3

4

5

6

7

8

9

10

11

12

A

14

I

D

Safe operating area

I

D =

ƒ

(

V

DS)

parameter:

D

= 0.01

, T

C = 25˚C

-1

10

0

10

1

10

2

10

A

I

D

10 0 10 1 10 2 V

V

DS

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

t

p = 15.0µs

Transient thermal impedance

Z

th JC =

ƒ

(

t

p)

parameter:

D = t

p /

T

-3

10

-2

10

-1

10

0

10

1

10

K/W

Z

thJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

t

p

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

BUZ 31 H

Rev. 2.5 Page 6 2009-11-09

Typ. output characteristics

I

D =

ƒ(

V

DS)

parameter:

t

p = 80 µs

0 2 4 6 8 10 V13

V

DS

0

4

8

12

16

20

24

A

32

I

D

V

GS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

ee 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

l

P

tot = 95W

l 20.0

Typ. drain-source on-resistance

R

DS (on) =

ƒ(

I

D)

parameter:

V

GS

0 4 8 12 16 20 A28

I

D

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

Ω

0.65

R

DS (on)

V

GS [V] =

a

4.0

V

GS [V] =

a

4.5

b

5.0

c

5.5

d

6.0

e

6.5

f

7.0

g

7.5

h

8.0

i

9.0

j

10.0

k

20.0

Typ. transfer characteristics

I

D

=

f

(

V

GS

)

parameter:

t

p = 80 µs

V

DS

≥

2 x

I

D x

R

DS(on)max

0 1 2 3 4 5 6 7 8 V 10

V

GS

0

2

4

6

8

10

12

A

16

I

D

Typ. forward transconductance

g

fs

=

f

(

I

D)

parameter:

t

p = 80 µs,

V

DS

≥

2 x

I

D

x R

DS(on)max

0 2 4 6 8 10 12 A16

I

D

0

1

2

3

4

5

6

7

8

9

10

11

S

13

g

fs

BUZ 31 H

Rev. 2.5 Page 7 2009-11-09

Gate threshold voltage

V

GS (th) =

ƒ

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60 -20 20 60 100 ˚C 160

T

j

2%

typ

98%

Drain-source on-resistance

R

DS (on) =

ƒ

(

T

j)

parameter:

I

D = 9 A,

V

GS = 10 V

-60 -20 20 60 100 ˚C 160

T

j

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

Ω

0.75

R

DS (on)

typ

98%

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS = 0V,

f

= 1MHz

0 5 10 15 20 25 30 V40

V

DS

1

10

2

10

3

10

4

10

pF

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

I

F =

ƒ

(

V

SD)

parameter:

T

j

, t

p = 80 µs

-1

10

0

10

1

10

2

10

A

I

F

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 150 ˚C typ

T

j = 150 ˚C (98%)

BUZ 31 H

Rev. 2.5 Page 8 2009-11-09

Avalanche energy

E

AS =

ƒ

(

T

j)

parameter:

I

D = 14.5 A,

V

DD = 50 V

R

GS = 25

Ω

,

L

= 1.42 mH

20 40 60 80 100 120 ˚C 160

T

j

0

20

40

60

80

100

120

140

160

180

mJ

220

E

AS

Typ. gate charge

V

GS =

ƒ

(

Q

Gate)

parameter:

I

D puls = 20 A

010 20 30 40 50 60 70 90

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS =

ƒ

(

T

j)

-60 -20 20 60 100 ˚C 160

T

j

180

185

190

195

200

205

210

215

220

225

230

V

240

V

(BR)DSS

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.