AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC998A is a GaAs MMIC pHEMT Distributed
Power Amplier die which operates between DC and
22 GHz. The amplier provides 14.5 dB of gain, 43 dBm
output IP3 and +32.5 dBm of output power at 1 dB gain
compression while requiring 500 mA quiescent current
from a +15 V supply. The HMC998A exhibits a slightly
positive gain slope, making it ideal for EW, ECM, Radar
and test equipment applications. The HMC998A ampli-
er I/Os are internally matched to 50 Ohms facilitating
integration into Mutli-Chip-Modules (MCMs). All data
is taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
High P1dB Output Power: +32.5 dBm
High Psat Output Power: +33.5 dBm
High Gain: 14.5 dB
High Output IP3: 43 dBm
Supply Voltage: +15 V @ 500 mA
50 Ohm Matched Input/Output
Die Size: 2.98 x 1.78 x 0.1 mm
Typical Applications
The HMC998A is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specications, TA = +25° C, Vdd = +15 V, Idd = 500 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 2 2 -18 18 - 22 GHz
Gain 13 15 12.5 14.5 12 14 dB
Gain Flatness ±0.15 ±0.15 ±0.15 dB
Gain Variation Over Temperature .006 .004 .009 dB/ °C
Input Return Loss 14 18 15 dB
Output Return Loss 13 16 17 dB
Output Power for 1 dB Compression (P1dB) 29.5 30.5 32.5 29.5 31.5 dBm
Saturated Output Power (Psat) 34 33.5 33 dBm
Output Third Order Intercept (IP3) 41 43 41.5 dBm
Noise Figure 82.5 3dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.6V Typ.) 500 500 500 mA
Supply Voltage 11 15 15 11 15 15 11 15 15 V
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 500 mA typical.
RFOUT
&
VDD
RFIN
VGG1
VGG2
ACG1
ACG2
ACG4
ACG3
4
3
2
1
78 6
5
Product covered by one or more US and Foreign Patents: US Pat. Nos. 8,786,368; 9,425,752; Patents Pending.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Gain & Return Loss
Gain vs. Temperature
Low Frequency Gain & Return Loss
Gain vs. Vdd
Gain vs. Idd Input Return Loss vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30
S21 S11 S22
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
15
20
0.0001 0.001 0.01 0.1 1
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
16
17
18
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
GAIN (dB)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
16
17
18
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V
+13V
+14V
+15V
GAIN (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Reverse Isolation vs. Temperature
Output Return Loss vs. Temperature
Input Return Loss vs. Vdd Input Return Loss vs. Idd
Output Return Loss vs. Vdd
Output Return Loss vs. Idd
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V
+13V
+14V
+15V
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V
+13V
+14V
+15V
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
RETURN LOSS (dB)
FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 20 25 30
+25C +85C -55C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Noise Figure vs. Temperature
Low Frequency P1dB vs. Temperature
Noise Figure vs. Idd
P1dB vs. Temperature
P1dB vs. Vdd P1dB vs. Idd
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V
+13V
+14V
+15V
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA
450mA
500mA
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
+25C +85C -55C
P1dB (dBm)
FREQUENCY (GHz)
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
5
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Low Frequency Psat vs. Temperature Psat vs. Temperature
Psat vs. Vdd Psat vs. Idd
Power Compression @ 2 GHz Power Compression @ 10 GHz
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
Psat (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V
+13V
+14V
+15V
Psat (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
Psat (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
400
450
500
550
600
650
700
750
800
0 4 8 12 16 20 24
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
40
400
450
500
550
600
650
700
750
800
0 4 8 12 16 20 24
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
24
26
28
30
32
34
36
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
+25C +85C -55C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Power Compression @ 22 GHz PAE @ Psat vs. Frequency
Power Dissipation @ 85C Gain & Power vs. Vdd @ 2 GHz
Gain & Power vs. Vdd @ 10 GHz Gain & Power vs. Vdd @ 22 GHz
0
5
10
15
20
25
30
35
40
400
450
500
550
600
650
700
750
800
0 4 8 12 16 20 24
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
0
5
10
15
20
25
30
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
FREQUENCY (GHz)
PAE (%)
5
5.5
6
6.5
7
7.5
8
8.5
9
0 4 8 12 16 20 24
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
10
15
20
25
30
35
11 12 13 14 15
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
11 12 13 14 15
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
11 12 13 14 15
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
7
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Gain & Power vs. Idd @ 2 GHz Gain & Power vs. Idd @ 10 GHz
Gain & Power vs. Idd @ 22 GHz
Output IP3 vs. Temperature
@ Pout/Tone = +18 dBm
Low Frequency Output IP3 vs. Temperature
@ Pout/Tone = +18 dBm
Output IP3 vs. Vdd
@ Pout/Tone= +18 dBm
10
15
20
25
30
35
350 400 450 500
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
350 400 450 500
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
10
15
20
25
30
35
350 400 450 500
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
20
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
FREQUENCY (GHz)
IP3 (dBm)
20
25
30
35
40
45
50
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
+25C +85C -55C
IP3 (dBm)
FREQUENCY (GHz)
20
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V +13V
+14V +15V
FREQUENCY (GHz)
IP3 (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
8
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Output IP3 vs. Idd
@ Pout/Tone = +18 dBm Output IM3 @ Vdd = +11V
Output IM3 @ Vdd = +12V Output IM3 @ Vdd = +13V
Output IM3 @ Vdd = +14V
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
20
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
FREQUENCY (GHz)
IP3 (dBm)
Output IM3 @ Vdd = +15V
0
10
20
30
40
50
60
70
80
90
0 2 4 6 8 10 12 14 16 18 20 22
2GHz
4GHz
8GHz
12GHz
16GHz
20GHz
22GHz
IM3 (dBc)
Pout/TONE (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Second Harmonics vs. Temperature @
Pout = +18 dBm
Second Harmonics vs. Vdd @
Pout = +18 dBm
Second Harmonics vs. Pout Output IP2 vs. Temperature
@ Pout/Tone = +18 dBm
Output IP2 vs. Vdd
@ Pout/Tone = +18 dBm
Output IP2 vs. Idd
@ Pout/Tone = +18 dBm
0
10
20
30
40
50
0 4 8 12 16 20 24
+25C +85C -55C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
0 4 8 12 16 20 24
+11V
+12V
+13V
+14V
+15V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
0 4 8 12 16 20 24
+10dBm
+12dBm
+14dBm
+16dBm
+18dBm
+20dBm
+22dBm
+24dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
IP2 (dBm)
FREQUENCY(GHz)
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20 22
350mA
400mA 450mA
500mA
IP2 (dBm)
FREQUENCY(GHz)
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20 22
+11V
+12V +13V
+14V +15V
IP2 (dBm)
FREQUENCY(GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Igg1 vs. Input Power Idd vs. Vgg1
Representative of a Typical Device
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1 3 5 7 9 11 13 15 17 19 21 23
2GHz
6GHz
8GHz
10GHz
12GHz
14GHz
16GHz
18GHz
22GHz
Igg1 (mA)
Input Power (dBm)
-100
0
100
200
300
400
500
600
700
800
900
1000
1100
-1.8 -1.5 -1.2 -0.9 -0.6 -0.3
Idd(mA)
Vgg1(V)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
11
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.0031 (0.079) SQUARE
4. RF PADS ARE 0.0039 (0.098) X 0.0076 (0.193)
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALLIZATION: GOLD
7. BACKSIDE METAL IS GROUND
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
9. OVERALL DIE SIZE IS ±.002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section on our
website for die packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Drain Bias Voltage (Vdd) 16V
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
RF Input Power (RFIN) 27 dBm
Output Load VSWR 7:1
Continuous Pdiss (T= 85 °C)
(derate 113.6 mW/°C above 85 °C) 8.8W
Storage Temperature -65 to 150 °C
Operating Temperature -55 to 85 °C
ESD Sensitivity (HBM) Passed 250V Class1A
Channel Temperature 175 °C
Nominal Channel Temperature
(T=85 °C, Vdd = 15V) 161.5 °C
Thermal Resistance
(channel to die bottom) 10.2 °C/W
Reliability Information
Stresses at or above those listed in the Absolute Maximum
Ratings may cause permanent damage to the product. This
is a stress rating only, functional operation of the product
at these or any other conditions above those indicated in
the operational section of this specication is not implied.
Operation beyond the maximum operating condition for
extended periods may affect product reliability.
1
2
34
5
6
7
8
.0040"
[0.101]
.1173"
[2.980]
.0034"
[0.086]
.0701"
[1.780]
.0049"
[0.124]
.0074"
[0.188]
.0353"
[0.896]
.0074"
[0.189]
.0682"
[1.732]
.0074"
[0.188]
.0053"
[0.135]
.0074"
[0.188]
.0107"
[0.272]
.0107"
[0.272]
.0050"
[0.127]
.0257"
[0.652]
.0021"
[0.054]
.0058"
[0.147]
.0004"
[0.010]
.0056"
[0.141]
.0215"
[0.545]
.0004"
[0.010]
.0190"
[0.482]
.0057"
[0.146]
.0192"
[0.489]
.0843"
[2.142]
.0066"
[0.167]
AIR BRIDGE
.0447"
[1.135]
.0039"
[0.098]
.0501"
[1.271]
NC
NC
NC
NC
NC
NC
NC
NC
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
12
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2VGG2
Gate 2 for amplier. Attach bypass
capacitors per application circuit herein. Typical opera-
tion has VGG2 set internal to IC. Setting VGG2 to 9.5v
externally can improve thermal resistance.
3ACG1 Low frequency termination. Attach bypass
capacitor per application circuit herein.
4ACG2 Low frequency termination. Attach bypass
capacitors per application circuit herein.
5 RFOUT & VDD
RF output for amplier. Connect DC bias (Vdd) network
to provide drain current (Idd). See application circuit
herein.
6ACG3 Low frequency termination. Attach bypass
capacitors per application circuit herein.
7ACG4 Low frequency termination. Attach bypass
capacitor per application circuit herein.
8VGG1
Gate control 1 for amplier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplier Biasing Procedure”
application note.
Die Bottom GND Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
13
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
having low series resistance and capable of providing 1000 mA.
NOTE 2: Optional capacitors to be used if part is operated below 200 MHz.
NOTE 3: Optional capacitors to be used if external VGG2 is applied. Typical operation has VGG2 set
internal to IC. Setting VGG2 to 9.5V externally can improve thermal resistace and will require
capacitors as shown.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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GaAs pHEMT MMIC
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Assembly Diagram
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
16
HMC998A
v03.0918
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, DC - 22 GHz
Notes:
