VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES tpsc min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Tvj Tvj(op) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 1200 V 100 A 200 A 20 V 10 s 175 -40 150 C 5SMY 12K1280 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 125 C 2.1 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Internal gate resistance RGint Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC V V VCE = 1200 V, VGE = 0 V Gate charge 100 Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 110 A A -200 200 nA 5 7 V 1120 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C nC 7.43 0.52 nF 0.34 2 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10, L = 60 nH, inductive load Tvj = 25 C 135 Tvj = 125 C 150 Tvj = 25 C 65 Tvj = 125 C 65 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10, L = 60 nH, inductive load Tvj = 25 C 420 Tvj = 125 C 490 Tvj = 25 C 55 Tvj = 125 C 75 Tvj = 25 C 10.5 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10, L = 60 nH, inductive load FWD: 5SLY 12G1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10, L = 60 nH, inductive load Unit 1.9 ICES VGE(TO) max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ ns ns ns ns mJ Tvj = 125 C 14.4 Tvj = 25 C 6.3 Tvj = 125 C 10.5 mJ tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 470 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 2 of 6 5SMY 12K1280 Mechanical properties Parameter Unit Dimensions Overall die L x W 11.9 x 11.2 mm exposed L x W (except gate pad) front metal 10.4 x 9.7 mm gate pad 1.12 x 1.14 mm 140 20 m 4 m 1.2 m LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing 1.120.05 1.32 0.24 1.31 1.140.05 0.23 9.67 11.190.05 G Emitter 10.37 11.890.05 Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 3 of 6 5SMY 12K1280 200 200 VCE = 20 V 25 C 175 175 125 C 150 150 125 IC [A] IC [A] 125 100 100 75 75 50 50 25 25 125 C 25 C VGE = 15 V 0 0 0 1 2 3 4 0 1 2 3 4 VCE [V] Fig. 1 5 6 7 8 9 10 11 12 13 14 VGE [V] Typical on-state characteristics Fig. 2 100 Typical transfer characteristics 40 VCC = 600 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH 75 VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH 35 30 Eon 50 Eon, Eoff [mJ] Eon, Eoff [mJ] 25 Eon 20 15 Eoff 10 25 Eoff 5 0 0 0 Fig. 3 50 100 150 IC [A] 200 250 Typical switching characteristics vs collector current 0 300 Fig. 4 10 20 30 40 RG [ohm] 50 60 70 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 page 4 of 6 5SMY 12M1280 20 10 Cies 15 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V C [nF] VGE [V] VCC = 900 V 10 1 Coes 5 Cres IC = 100 A Tvj = 25 C 0 0.1 0 Fig. 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Qg [C] 0.8 0.9 1 Typical gate charge characteristics 0 Fig. 6 5 10 15 20 Vce[V] 25 30 35 Typical capacitances vs collector-emitter voltage 2.5 VCC 1000 V, Tvj(op) = 150 C VGE = 15 V, RG = 10 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 0.0 0 500 1000 1500 VCE [V] Fig. 7 Safe operating area (RBSOA) ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1319-02 Dez 12 5 of 6 5SMY 12M1280 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. Related documents: 5SYA 2045 Thermal runaway during blocking 5SYA 2059 Applying IGBT and Diode dies 5SYA 2093-00 Thermal design of IGBT Modules We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1319-02 Dez 12