5SMY12K1280 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE

=

1200

V

IC

=

100

A

Die size: 11.9 x 11.2 mm

Doc. No. 5SYA 1319-02 Dez 12

 Ultra low loss thin IGBT die

 Highly rugged SPT+ design

 Large bondable emitter area

 Passivation : Silicon Nitride plus Polyimide

Maximum rated values 1)

Parameter

Symbol

Conditions

min

max

Unit

Collector-emitter voltage

VCES

VGE = 0 V, Tvj  25 °C

1200

V

DC collector current

IC

100

A

Peak collector current

ICM

Limited by Tvjmax

200

A

Gate-emitter voltage

VGES

-20

20

V

IGBT short circuit SOA

tpsc

VCC = 900 V, VCEM  1200 V

VGE  15 V, Tvj  125 °C

10

µs

Junction temperature

Tvj

175

°C

Tvj(op)

-40

150

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

IGBT-Die

5SMY 12K1280

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1319-02 Dez 12 page 2 of 6

IGBT characteristic values 2)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector (-emitter)

breakdown voltage

V(BR)CES

VGE = 0 V, IC = 1 mA, Tvj = 25 °C

1200

V

Collector-emitter

saturation voltage

VCE sat

IC = 100 A, VGE = 15 V

Tvj = 25 °C

1.9

V

Tvj = 125 °C

2.1

V

Collector cut-off current

ICES

VCE = 1200 V, VGE = 0 V

Tvj = 25 °C

100

µA

Tvj = 125 °C

110

µA

Gate leakage current

IGES

VCE = 0 V, VGE = 20 V, Tvj = 125 °C

-200

200

nA

Gate-emitter threshold voltage

VGE(TO)

IC = 4 mA, VCE = VGE, Tvj = 25 °C

5

7

V

Gate charge

Qge

IC = 100 A, VCE = 600 V, VGE = -15 ..15 V

1120

nC

Input capacitance

Cies

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C

7.43

nF

Output capacitance

Coes

0.52

Reverse transfer capacitance

Cres

0.34

Internal gate resistance

RGint

2



Turn-on delay time

td(on)

VCC = 600 V, IC = 100 A,

VGE = ±15 V, RG = 10,

L = 60 nH,

inductive load

Tvj = 25 °C

135

ns

Tvj = 125 °C

150

Rise time

tr

Tvj = 25 °C

65

ns

Tvj = 125 °C

65

Turn-off delay time

td(off)

VCC = 600 V, IC = 100 A,

VGE = ±15 V, RG = 10,

L = 60 nH,

inductive load

Tvj = 25 °C

420

ns

Tvj = 125 °C

490

Fall time

tf

Tvj = 25 °C

55

ns

Tvj = 125 °C

75

Turn-on switching energy

Eon

VCC = 600 V, IC = 100 A,

VGE = ±15 V, RG = 10,

L = 60 nH,

inductive load

FWD: 5SLY 12G1200

Tvj = 25 °C

10.5

mJ

Tvj = 125 °C

14.4

Turn-off switching energy

Eoff

VCC = 600 V, IC = 100 A,

VGE = ±15 V, RG = 10,

L = 60 nH,

inductive load

Tvj = 25 °C

6.3

mJ

Tvj = 125 °C

10.5

Short circuit current

ISC

tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,

VCC = 900 V, VCEM ≤ 1200 V

470

A

2) Characteristic values according to IEC 60747 - 9

5SMY 12K1280

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1319-02 Dez 12 page 3 of 6

Mechanical properties

Parameter

Unit

Dimensions

Overall die

L x W

11.9 x 11.2

mm

exposed

front metal

L x W (except gate pad)

10.4 x 9.7

mm

gate pad

L x W

1.12 x 1.14

mm

thickness

140 ± 20

µm

Metallization 3)

front (E)

AlSi1

4

µm

back (C)

Al / Ti / Ni / Ag

1.2

µm

3) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.

Outline drawing

G

Emitter

9.67

10.37

1.32

1.31

0.23

1.14±0.05

1.12±0.05

0.24

11.89±0.05

11.19±0.05

Note: all dimensions are shown in mm

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.

This product has been designed and qualified for Industrial Level.

5SMY 12K1280

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1319-02 Dez 12 page 4 of 6

0

25

50

75

100

125

150

175

200

0 1 2 3 4

VCE [V]

IC [A]

25 °C

125 °C

VGE = 15 V

0

25

50

75

100

125

150

175

200

012345678910 11 12 13 14

VGE [V]

IC [A]

25 °C

125 °C

VCE = 20 V

Fig. 1

Typical on-state characteristics

Fig. 2

Typical transfer characteristics

0

25

50

75

100

050 100 150 200 250 300

IC [A]

Eon, Eoff [mJ]

Eon

Eoff

VCC = 600 V

RG = 10 ohm

VGE = ±15 V

Tvj = 125 °C

Lσ = 60 nH

0

5

10

15

20

25

30

35

40

010 20 30 40 50 60 70

RG [ohm]

Eon, Eoff [mJ]

VCC = 600 V

IC = 100 A

VGE = ±15 V

Tvj = 125 °C

Lσ = 60 nH

Eon

Eoff

Fig. 3

Typical switching characteristics vs

collector current

Fig. 4

Typical switching characteristics vs

gate resistor

5SMY 12M1280

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1319-02 Dez 12

5 of 6

0

5

10

15

20

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Qg [µC]

VGE [V]

VCC = 600 V

VCC = 900 V

IC = 100 A

Tvj = 25 °C

0.1

1

10

0 5 10 15 20 25 30 35

Vce[V]

C [nF]

VGE = 0 V

fOSC = 1 MHz

VOSC = 50 mV

Cies

Coes

Cres

Fig. 5

Typical gate charge characteristics

Fig. 6

Typical capacitances vs

collector-emitter voltage

0.0

0.5

1.0

1.5

2.0

2.5

0500 1000 1500

VCE [V]

ICpulse

/ IC

VCC £ 1000 V, Tvj(op) = 150 °C

VGE = ±15 V, RG = 10 ohm

Fig. 7

Safe operating area (RBSOA)

5SMY 12M1280

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA 1319-02 Dez 12

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

This product has been designed and qualified for Industrial Level.