NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR DEVICE BV cgs Ieiconry | Veeway | f (1) Cres * Dire PACKAGE TYPE VOLTS AMPS | VOLTS | nsec * pf *elw TO-257 | NSG30620 600 20 2.6 570 750 2.0 GA NSG30620A 600 20 3.1 310 750 2.0 TO-254 | NSG20640 600@ 90c 31 2.0 800 1500 1.25 NSG20648A 600@ 90c 24 2.9 100 1500 1.25 RA NSG21034 1000 34 3.6 750 1500 1.25 TO-258 | NSG40635 600 35 2.7 250 1200 1.10 NSG40640 600 40 2.0 800 1500 1.0 NSG40648A 600 48 2.9 100 1500 1.0 NSG40660A 600 60 3.1 125 2500 0.85 NSG40675 600 75 2.0 400 4000 0.75 NSG40675A 600 75 2.9 175 4000 0.75 NSG41045 1000 45 3.2 300 2100 0.75 NSG41065 1000 65 3.2 300 3500 0.75 NSG41270A 1200 70 42 500 4300 0.75 NSG41275A 1200 75 3.2 1200 4300 0.75 e Electrical Characteristics @ 25 C unless otherwise noted (1) f isa function of G * Typical 38