ALD110900A - Advanced Linear Devices

EPAD

ADVANCED

LINEAR

DEVICES, INC.

GENERAL DESCRIPTION

ALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic

quad/dual N-Channel MOSFETs matched at the factory using ALD’s

proven EPAD® CMOS technology. These devices are intended for low

voltage, small signal applications. The ALD1 10800/ALD1 10900 features

zero threshold voltage, which reduces or eliminates input to output

voltage level shift, including circuits where the signal is referenced to

GND or V+. This feature greatly reduces output signal voltage level

shift and enhances signal operating range, especially for very low

operating voltage environments. With these zero threshold devices an

analog circuit with multiple stages can be constructed to operate at

extremely low supply or bias voltage levels. As an example, an input

amplifier stage operating at 0.2V supply voltage has been demonstrated.

ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair

MOSFETs are designed for exceptional device electrical characteris-

tics matching. As these devices are on the same monolithic chip, they

also exhibit excellent tempco tracking characteristics. They are

versatile as design components for a broad range of analog applica-

tions such as basic building blocks for current sources, differential

amplifier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual

MOSFET also exhibits well controlled parameters, enabling the user

to depend on tight design limits. Even units from different batches

and different date of manufacture have correspondingly well matched

characteristics.

These devices are built for minimum offset voltage and differential

thermal response, and they are designed for switching and amplifying

applications in +0.2V to +10V systems where low input bias current,

low input capacitance and fast switching speed are desired. The VGS(th)

of these devices are set at +0.0V , which classify them as both enhance-

ment mode and depletion mode devices. When the gate is set at 0.0V,

the drain current = +1µA @ VDS =1+0.1V , which allow a class of circuits

with output voltage level biased at or near input voltage level without

voltage level shift. These devices exhibit same well controlled turn-off

and sub-threshold characteristics as standard enhancement mode

MOSFETs.

The ALD1 10800A/ALD1 10800/ALD1 10900A/ALD1 10900 are MOSFET

devices that feature high input impedance (1012Ω) and high DC current

gain (>108 ). A sample calculation of the DC current gain at a drain

current of 3mA and input leakage current of 30pA at 25°C is = 3mA/

30pA = 100,000,000. For most applications, connect V+ pin to the most

positive voltage potential (or left open unused) and V- and N/C pins to

the most negative voltage potential in the system. All other pins must

have voltages within these voltage limits.

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD®

MATCHED PAIR MOSFET ARRAY

N/C*

314

413

512

N/C*

GN1

DN1

N/C*

DN4

N/C*

GN4

GN3

DN3

DN2

GN2

V+

S34

S12

V-

V+

V-

ALD110800

M 4 M 3

M 1 M 2

V-

V- V-

V-

GN1

DN1

N/C*

S12

DN2

GN2

ALD110900

M 1 M 2

V-

N/C*

V-

FEATURES

• Precision zero threshold voltage mode

• Nominal RDS(ON) @VGS=0.0V of 104KΩ

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• VGS(th) match (VOS) to 2mV and 10mV

• Positive, zero, and negative VGS(th) tempco

• Low input capacitance

• Low input/output leakage currents

APPLICATIONS

• Very low voltage analog and digital circuits

• Zero power fail safe circuits

• Backup battery circuits & power failure detector

• Low level voltage clamp & zero crossing detector

• Source followers and buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Analog switches / multiplexers

• Voltage comparators and level shifters

ALD110800/ALD110800A/ALD110900/ALD110900A

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin 16-Pin 8-Pin 8-Pin

Plastic Dip SOIC Plastic Dip SOIC

Package Package Package Package

ALD110800APC ALD110800ASC ALD110900APA ALD110900ASA

ALD110800PC ALD110800SC ALD110900PA ALD110900SA

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

VGS(th)= +0.0V

www.aldinc.com

*N/C pins are internally connected.

Connect to V- to reduce noise

ALD110800/ALD110800A/ALD110900/ALD110900A Advanced Linear Devices 2

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = GND TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Notes: 1 Consists of junction leakage currents

ALD110800A / ALD110900A ALD110800/ ALD110900

Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS 10.6V

Gate-Source voltage, VGS 10.6V

Power dissipation 500 mW

Operating temperature range PA, SA, PC, SC package 0°C to +70°C

Storage temperature range -65°C to +150°C

Lead temperature, 10 seconds +260°C

Gate Threshold Voltage VGS(th) -0.01 0.00 0.01 -0.02 0.00 0.02 V IDS =1µA, VDS = 0.1V

Offset Voltage VOS 12 210mV

VGS(th)1-VGS(th)2

Offset Voltage Tempco TCVOS 55µV/°CV

DS1 = VDS2

GateThreshold Voltage Tempco TCVGS(th) -1.7 -1.7 mV/°CI

D = 1µA, VDS = 0.1V

0.0 0.0 ID = 20µA, VDS = 0.1V

+1.6 +1.6 ID = 40µA, VDS = 0.1V

On Drain Current IDS (ON) 12.0 12.0 mA VGS = +9.5V, VDS = +5V

3.0 3.0 VGS = +4.0V, VDS = +5V

Forward T ransconductance GFS 1.4 1.4 mmho VGS = +4.0V

VDS = +9.0V

Transconductance Mismatch ∆GFS 1.8 1.8 %

Output Conductance GOS 68 68 µmho VGS = +4.0V

VDS = +9.0V

Drain Source On Resistance RDS (ON) 500 500 ΩVDS = +0.1V

VGS = +4.0V

Drain Source On Resistance RDS (ON) 104 104 KΩVDS = +0.1V

VGS = +0.0V

Drain Source On Resistance ∆RDS (ON) 55%V

DS = +0.1V

Tolerance VGS = +4.0V

Drain Source On Resistance ∆RDS (ON) 0.5 0.5 %

Mismatch

Drain Source Breakdown BVDSX 10 10 V IDS = 1.0µA

Voltage V-= VGS = -1.0V

Drain Source Leakage Current1IDS (OFF) 10 400 10 400 pA VGS = -1.0V, VDS =+5V

V- = -5V

44nAT

A = 125°C

Gate Leakage Current1IGSS 530 5 30pAV

DS = 0V VGS = +10V

11nAT

A =125°C

Input Capacitance CISS 2.5 2.5 pF

Transfer Reverse Capacitance CRSS 0.1 0.1 pF

Turn-on Delay Time ton 10 10 ns V+ = 5V RL= 5KΩ

Turn-off Delay Time toff 10 10 ns V+ = 5V RL= 5KΩ

Crosstalk 60 60 dB f = 100KHz