VVZB120-16ioX
C7
O1
G7
L7
S1
W10
W1
M1
I1
E1
O10
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Thyristor Module
Part number
VVZB120-16ioX
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● X2PT - 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
● 3~ Rectifier with brake unit
for drive inverters
V2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms and Conditions of Usage
RRM
1600
I 180
FSM
700
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 180
CE(sat)
1.7
C25
V= V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.27
R0.5 K/W
min.
180
VV
50T = 25°C
VJ
T = °C
VJ
mA20V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
250 WT = 25°C
C
60
1600
forward voltage drop
total power dissipation
Conditions
Unit
1.90
T = 25°C
VJ
150
V
T0
V0.83T = °C
VJ
150
r
T
6.9 mΩ
V1.25T = °C
VJ
I = A
T
V
60
2.04
I = A180
I = A180
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
54
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
300 µs
DAV
d =rectangular ⅓
bridge output current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
180 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
95 mA
T = °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
450 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 60 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 60 A
T
125
R
thCH
0.10
thermal resistance case to heatsink
K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
180
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
min.
Conditions
Unit
140
V
V
CE(sat)
total power dissipation
500 W
collector emitter leakage current
7.5 V
turn-on delay time
230 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
300
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
1.9
6.86
mA
0.1 mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
340 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
70 ns
380 ns
230 ns
12.5 mJ
11.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
450 A
R
thJC
thermal resistance junction to case
0.10
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.75
V
VJ
1.60T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
5.2 µC
50 A
300 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
1.9 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
4
100
100
30
30
6.8
6.8
6.8
600
720
1000
600
I
CM
1.7
R
thCH
thermal resistance case to heatsink
0.25
K/W
0.3
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT + Diode
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
Ratings
UL Date code Prod. Index
Part Number
yywwAA
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Package
T
op
°C
M
D
Nm2.5
mounting torque
2
T
VJ
°C150
virtual junction temperature
-40
Weight g76
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
100 A
per terminal
125-40
terminal to terminal
V2-Pack
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VVZB120-16ioX 511152Box 6VVZB120-16ioXStandard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.83
mΩ
V
0 max
R
0 max
slope resistance *
3.7
1.31
8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor Brake
Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
±0.3
±0.15
±0.3
R
R
R1
80
78.5
93
17
13
4x45°
40.4
±0.25
38
0.25
65
40
±0.2
32
23.8
5.5
5.5
15.4
15.4
0.5
16.8
24.2 28.8
9.8
2.47.1
16.6
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
±0.3
2
0.8
±0.3
11.7
5.5
±0.3
4.5±0.5
Marking
M 2:1
(4)
Ø 2.1
Ø 2.5
Ø 6.1
1.5
6.0
D
etail X
X
6
9
10
8
7
5
4
3
2
1
F
C
B
A
E
D
H
G
L
K
I
F
C
B
A
D
E
G
H
K
I
L
10
6
S
O
M
N
R
P
9
U
T
V
W
8
7
S
O
M
N
P
R
T
U
5
W
V
4
2
3
1
Y
M 5:1
1.5 +0.6-0.3
Ø1.5 (DIN 46 431)
0.5±0.2
D
etail
Y
Remarks:
EJOT PT® self-tapping screws of the dimension K25 are
recommended for the mechanical connection between module
and PCB. Choose the right length according to your board
thickness at a maximum depth of 6 mm of the module holes.
The recommended mounting torque is 1.5 Nm.
C7
O1
G7
L7
S1
W10
W1
M1
I1
E1
O10
Outlines V2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
0.001 0.01 0.1 1
200
300
400
500
6
00
2 3 4 5 6 7 8 9
1
0
500
1000
1500
2000
2500
3
0
00
0 20 40 60 80
0
20
40
60
80
100
120
0 50 100 150 1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 50 100 150
0
20
40
60
80
100
120
140
160
50Hz, 80% V
RRM
0.0 0.5 1.0 1.5 2.0
0
50
100
150
2
0
0
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 125°C
T
VJ
= 25°C
I
2
t
[A
2
s]
I
FSM
[A]
t [s]
I
F
[A]
V
F
[V] t [ms]
I
T(AV)M
[A] T
amb
[°C]
I
T(AV)M
[A]
T
C
[°C]
t [ms]
Z
thJC
[K/W]
T
VJ
= 150°C
10 100 1000
1
10
100
1000
t
gd
[μs]
I
G
[mA]
typ. Limit
I
G
[mA]
V
G
[V]
10
0
10
1
10
2
10
3
10
4
0.1
1
10
1
3
2
4
5
6
I
GD
,T4= 125°C 6: P
GM
= 10 W
5: P
GM
= 5 W
4: P
GAV
= 0.5 W
1: I
GT
,T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
T
VJ
= 25°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger delay time
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
Fig. 5 Max. forward current vs.
case temperature per thyristor
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
P
tot
[W]
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Constants for Z
thJC
calc.:
i R
th
(K/W) t
i
(s)
1 0.040 0.004
2 0.003 0.010
3 0.140 0.030
4 0.120 0.300
5 0.197 0.080
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VVZB120-16ioX
0.001 0.01 0.1 1
0.01
0.1
1
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
6 7 8 9 10 11 12 13
0
50
100
150
200
I
C
[A]
t
[ns]
V
F
[V]
t [s]
Z
thJC
[K/W]
Fig.2 Typ. output characteristics
IGBT
Fig. 3 Typ. transfer charact.
IGBT
Fig. 6 Typ. forward characteristics
Diode
Fig. 9 Transient thermal
resistance junction to case
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
I
C
[A]
V
CE
[V]
Fig.1 Output characteristics IGBT
0 1 2 3 4
0
50
100
150
200
I
C
[A]
V
CE
[V] V
GE
[V]
4 8 12 16 20 24
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
0 10 20 30 40 50 60
0
20
40
60
80
0
2
4
6
8
I
F
[A]
I
rr
E
rec
E
rec
[mJ]
R
G
[Ohm]
Fig. 7 Typ. reverse recovery
c
h
a
r
a
c
t
e
r
i
s
t
i
c
s
D
i
o
d
e
Fig. 8 Typ. reverse recovery
characteristics Diode
0 50 100 150 200
0
10
20
30
40
50
0
100
200
300
400
500
E
off
[mJ]
I
C
[A]
Fig. 5 Typ. turn-off energy & switch.
times vs. collector current
0 50 100 150 200
0
100
200
300
400
0
10
20
30
40
E
on
[
mJ]
I
C
[A]
t
d(on)
E
on
Fig. 4 Typ. turn-on energy & switch.
times vs. collector current
t
r
t
r
[ns]
E
rec
[
mJ]
I
rr
[A] I
rr
[A]
25°C
125°C
9 V
11 V
13 V
25°C
125°C
E
off
t
f
t
d(off)
I
F
[A]
25°C
125°C
E
rec
I
rr
V
CE
= 20 V
V
GE
= 19 V
17 V
15 V
T
VJ
= 125°C
V
R
= 600 V
I
F
= 30 A
Diode
IGBT
T
VJ
= 150°C
Diode
R
i
t
i
0.365 0.0050
0.180 0.0003
0.255 0.0397
0.100 0.1000
IGBT
Riti
0.050 0.0010
0.035 0.0100
0.120 0.0300
0.045 0.0800
R
G
= 6.8 Ohm
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 6.8 Ohm
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
R
G
= 6.8 Ohm
V
R
= 600 V
T
VJ
= 125°C
Brake IGBT + Diode
IXYS reserves the right to change limits, conditions and dimensions. 20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
