2N3737UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3737UBJ) * JANTX level (2N3737UBJX) * JANTXV level (2N3737UBJV) * JANS level (2N3737UBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0806 Reference document: MIL-PRF-19500/395 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 37.5C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT RJA TJ TSTG Rating 40 75 5 1.5 0.5 3.07 325 Unit Volts Volts Volts A W mW/C C/W -65 to +200 C Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3737UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current V(BR)CEO Test Conditions Min IC = 10 mA ICBO1 ICBO2 ICEX1 ICEX2 On Characteristics Max 40 Units Volts 200 250 A nA nA A 10 100 A nA 10 250 VCB = 75 Volts VCB = 30 Volts VCE = 30 Volts, VEB = 2 Volts VCE = 30 Volts, VEB = 2 Volts, TA = 150C VEB = 5 Volts VEB = 4 Volts IEBO1 IEBO2 Typ Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VBEsat4 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Test Conditions IC = 10 mA, VCE = 1 Volts IC = 150 mA, VCE = 1 Volts IC = 500 mA, VCE = 1 Volts IC = 1 A, VCE = 1.5 Volts IC = 1.5 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA Min 35 40 40 20 20 15 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 140 80 0.8 1.0 1.2 1.4 0.2 0.3 0.5 0.9 0.9 Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 2.5 Max Units 6.0 9 pF 80 pF 8 40 60 ns Switching Characteristics Delay Time Rise Time Saturated Turn-Off Time Copyright 2002 Rev. G td tr tOFF VBE = 2 Volts, IC = 1 A, IB = 100 mA IC = 1 A, IB1=IB2=100 mA ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2