Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3737UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3737UBJ)
• JANTX level (2N3737UBJX)
• JANTXV level (2N3737UBJV)
• JANS level (2N3737UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0806
• Reference document:
MIL-PRF-19500/395
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 40 Volts
Collector-Base Voltage VCBO 75 Volts
Emitter-Base Voltage VEBO 5 Volts
Collector Current, Continuous IC 1.5 A
Power Dissipation, TA = 25°C
Derate linearly above 37.5°C PT 0.5
3.07
W
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3737UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 40 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 75 Volts
VCB = 30 Volts 10
250 µA
nA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 30 Volts, VEB = 2 Volts
VCE = 30 Volts, VEB = 2 Volts,
TA = 150°C
200
250
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
100
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 10 mA, VCE = 1 Volts
IC = 150 mA, VCE = 1 Volts
IC = 500 mA, VCE = 1 Volts
IC = 1 A, VCE = 1.5 Volts
IC = 1.5 A, VCE = 5 Volts
IC = 500 mA, VCE = 1 Volts
TA = -55°C
35
40
40
20
20
15
140
80
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
VBEsat4
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.9
0.8
1.0
1.2
1.4
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
VCEsat4
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 1 A, IB = 100 mA
0.2
0.3
0.5
0.9
Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 100 MHz 2.5 6.0
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 9
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 80
pF
Switching Characteristics
Delay Time
Rise Time
td
tr
VBE = 2 Volts, IC = 1 A,
IB = 100 mA
8
40 ns
Saturated Turn-Off Time tOFF I
C = 1 A, IB1=IB2=100 mA 60 ns