PAGE . 1
September 03.2010-REV.00
2N7002FN3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
MECHANICAL DATA
• Case: DFN 3L, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Marking: AH
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note 1 : Maximum DC current limited by the package
2 : Surface mounted on FR4 board,t<10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PA RA ME TE R S YMB OL L IMIT UNITS
Drain-Source Voltage V
DS
60 V
Gats-Source Voltage V
GS
+20 V
Continous Drain Current I
D
115 mA
Pulsed Drain Current
(1)
I
DM
800 mA
Maximum Power Dissipation P
D
150 mW
Junction-to Ambient Thermal Resistance (PCB mounted)
2
R
θJA
883
o
C/W
Operating Junction and Storage Temperature Range T
J
,T
STG
-55 to +150
o
C
1
2
3
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.014(0.36)
0.022(0.55)
0.017(0.45)
0.042(1.05)
0.037(0.95)
0.026(0.65)
0.021(0.55)
0.013(0.32)
0.009(0.22)
0.002(0.05)MAX.
0.022(0.55)
0.017(0.45)
0.008(0.20)
0.004(0.10)
0.013(0.32)
0.009(0.22)
0.008(0.20)
0.004(0.10)
Unit inch(mm)：
DFN 3L
0.014(0.36)
PAGE . 2
September 03.2010-REV.00
ELECTRICAL CHARACTERISTICS
V
DD
V
OUT
V
IN
R
G
R
L
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
GS
R
G
R
L
1mA
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V, I
D
=10mA 60 - - V
Gate Threshold Voltage V
GS(
th
)
V
DS
=V
GS
, I
D
=250mA 1 - 2.5 V
Drain-Source On-State Resistance R
DS(ON)
V
GS
=4.5V, I
D
=50mA - - 7.5
W
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=500mA - - 5
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V,V
GS
=0V --1mA
Gate Body Leakage I
GSS
V
GS
=+20V,V
DS
=0V - - +100 nA
Forward Transconductance g
FS
V
DS
=15V, I
D
=250mA 100 - - mS
Dynamic
To t a l Ga t e C ha r g e Q
G
V
DS
=15V, I
D
=500mA, V
GS
=4.5V
-0.60.7
nC
Gate-Source Charge Q
GS
-0.1-
Gate-Drain Charge Q
GD
-0.08-
Turn-On Delay Time
TON
V
DD
=10V,R
L
=20W
I
D
=500mA,V
GEN
=10V,R
G
=10W
-915
ns
Turn-Off Delay Time t
OFF
-2126
Input Capacitance C
ISS
V
DS
=25V, V
G
s=0V, f=1.0MHz
--50
pFOutput Capacitance C
OSS
--25
Reverse Transfer Capacitance C
RSS
--5
Source-Drain Diode
Max.Diode Forward Current I
S
---115mA
Diode Foreard Voltage V
SD
I
S
=250mA,V
GS
=0V - 0.93 1.2
2N7002FN3
PAGE . 3
September 03.2010-REV.00
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
2N7002FN3
DFN 3L
0.043
(1.10)
0.017
(0.42)
0.010
(0.26)
0 028
(0.70)
.
0 027
(0.68)
.
0 008
(0.20)
.
0 010
(0.25)
.
Unit inch(mm)：
PAGE .4
Part No_packing code_Version
For example :
RB500V-40_R2_
Serial number
Part No. Version code means HF
Packing size code means 13"
Packing type means T/R
Packing
type 1st Code Packing size
code 2nd Code HF or RoHS 1st Code 2nd~5th Code
T/B AN/A 0HF 0 serial number
T/R R7" 1RoHS 1 serial number
B/P B13" 2
T/P T26mm X
TRR S52mm Y
TRL LPBCU U
FORMING FPBCD D
Packing Code XX Version Code XXXXX
00001
2N7002FN3_R1_00001
2N7002FN3_R1_10001
2N7002FN3
September 03.2010-REV.00
