1N5348B THRU 1N5388B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts
F
E
A
T
U
R
E
S
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Typical ID less than 1£gA above 13V
l High temperature soldering :
260 ¢J/10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
M
E
C
H
A
N
I
C
A
L
D
A
T
A
Case: JEDEC DO-201AE Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Standard Packaging: 52mm tape
Weight: 0.04 ounce, 1.1 gram
M
A
X
I
M
U
M
R
A
T
I
N
G
S
A
N
D
E
L
E
C
T
R
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
Ratings at 25 ¢J ambient temperature unless otherwise specified.SYMBOLVALUEUNITS
DC Power Dissipation @ TL=75 ¢J, Measure at Zero Lead Length(Fig. 1)
Derate above 75 ¢J(Note 1)P
D
5.0
40.0Watts
mW/¢J
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note 1,2)I
F
S
M
See Fig. 5Amps
Operating Junction and Storage Temperature Range T
J
,T
S
T
G
-55 to +150 ¢J
NOTES:
1. Mounted on 8.0mm2 copper pads to each terminal.
2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.
D
O
-
2
0
1
A
E
1
N
5
3
4
8
B
T
H
R
U
1
N
5
3
8
8
B
E
L
E
C
T
R
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
(
T
A
=
2
5
¢J
u
n
l
e
s
s
o
t
h
e
r
w
i
s
e
n
o
t
e
d
,
V
F
=
1
.
2
M
a
x
@
I
F
=
1
A
f
o
r
a
l
l
t
y
p
e
s
.
M
a
x
m
Z
e
e
I
m
p
d
n
c
e
M
a
r
v
r
s
e
L
a
a
e
C
u
r
n
t
T
y
p
N
o
.
N
t
e
1
.
)
N
o
a
n
e
r
V
o
l
t
g
V
z
I
Z
T
l
t
(
t
2
)
T
e
s
t
u
r
e
n
t
Z
T
m
A
Z
Z
T
@
I
Z
T
O
h
m
s
(
N
o
t
e
2
.
)
Z
Z
k
@
I
Z
K
=
1
m
A
O
h
m
s
(
N
o
t
e
2
.
)
I
R
£g
A
V
R
V
o
l
t
s
M
x
r
e
C
u
r
n
I
A
m
p
s
N
t
e
3
M
a
V
o
g
e
R
e
u
t
i
o
n
£G
V
o
l
t
s
N
t
e
4
.
)
M
x
m
R
g
l
a
t
o
r
r
e
t
I
Z
M
m
A
(
o
.
)
1
N
5
4
B
1
N
5
4
B
1
N
5
5
B
1
N
5
5
B
1
1
1
1
1
5
1
0
1
0
1
0
2
2
2
2
2
2
0
5
5
2
1
1
8
.
4
9
.
1
9
.
9
1
0
.
6
8
.
7
.
.
2
.
2
.
2
.
2
4
0
3
5
3
5
3
0
1
N
5
5
B
1
N
5
5
B
1
N
5
5
B
1
N
5
5
B
1
N
5
5
B
1
1
1
1
1
5
5
0
5
5
2
2
2
2
5
5
5
5
5
1
1
0
.
5
0
.
5
0
.
5
1
.
5
1
2
.
2
1
2
.
9
1
3
.
7
1
4
.
4
.
6
.
.
.
.
2
.
.
3
.
.
3
5
2
5
2
0
2
5
2
0
1
N
5
5
B
1
N
5
5
B
1
N
5
5
B
1
N
5
6
B
1
N
5
6
B
2
2
2
2
2
5
0
0
0
0
3
3
5
5
0
1
1
2
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
1
5
.
2
1
6
.
7
1
8
.
2
9
2
0
.
6
.
.
.
.
.
.
.
4
.
5
.
5
.
2
7
2
6
1
8
1
0
1
6
1
N
5
6
B
1
N
5
6
B
1
N
5
6
B
1
N
5
6
B
1
N
5
6
B
2
3
3
3
3
0
0
0
0
0
1
1
1
3
4
5
6
7
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
2
1
.
2
2
2
.
8
2
5
.
1
2
7
.
4
2
9
.
7
.
.
.
.
.
.
.
.
.
6
.
6
1
0
1
8
1
4
1
2
1
2
1
N
5
6
B
1
N
5
6
B
1
N
5
6
B
1
N
5
7
B
1
N
5
7
B
4
4
5
5
6
0
5
5
0
0
2
2
2
3
4
9
1
3
8
5
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
3
2
.
7
3
5
.
8
3
8
.
8
4
2
.
6
4
5
.
5
.
.
.
.
.
.
.
.
1
.
1
0
1
0
3
6
9
1
N
5
7
B
1
N
5
7
B
1
N
5
7
B
1
N
5
7
B
1
N
5
7
B
6
6
7
8
8
0
0
0
5
5
4
4
4
6
7
0
0
2
2
6
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
4
7
.
1
5
1
.
7
6
6
2
.
2
6
.
2
.
.
.
.
3
.
.
.
2
6
0
3
8
5
.
5
1
N
5
7
B
1
N
5
7
B
1
N
5
7
B
1
N
5
8
B
1
N
5
8
B
9
1
0
0
1
0
1
0
5
2
2
0
0
7
9
1
5
1
0
1
0
6
0
1
0
1
5
1
5
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
6
9
.
2
6
8
3
.
6
9
1
.
2
9
8
.
8
.
.
.
.
.
.
.
.
.
.
5
.
5
4
.
5
3
3
.
5
3
.
6
1
N
5
8
B
1
N
5
8
B
1
N
5
8
B
1
N
5
8
B
1
N
5
8
B
1
N
5
8
B
1
0
1
0
1
0
1
0
1
0
1
0
2
0
3
0
5
0
3
0
4
0
4
0
1
0
1
0
1
5
1
5
1
5
1
5
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
0
.
5
1
0
6
1
1
4
1
2
2
1
2
9
1
3
7
1
4
4
.
.
.
1
1
.
.
3
3
3
4
5
4
3
.
6
2
.
4
8
2
.
4
5
1
N
5
8
B
2
0
4
0
1
5
0
.
5
1
5
2
.
5
2
.
6
NOTE:
1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of ¡Ó10% with
guaranteed limits on only Vz, IR, Ir, and VF as shown in the electrical characteristics table. Units with guaranteed limits
on all seven parameters are indicated by suffix B for ¡Ó5% tolerance.
2. ZENER VOLTAGE (Vz) AND IMPEDANCE (ZZT & ZZK) - Test conditions for Zener voltage and impedance are as
follows; Iz is applied 40 ¡Ó 10 ms prior to reading. Mounting contacts are located from the inside edge of mounting
clips to the body of the diode.(TA=25 ¢J¡Ï¢·
¡Ð¢±¢J).
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting
contact located as specified in Note 3. (TA=25 ¢J¡Ï¢·
¡Ð¢±¢J).
4. VOLTAGE REGULATION (£GVz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40 ¡Ó10 ms.
(TA=25 ¢J¡Ï¢·
¡Ð¢±¢J). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. TL=75 ¢J at maximum from the device body.
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = £c LAPD + TA
£c LA is the lead-to-ambient thermal resistance (¢J/W)
and PD is the power dissipation.
Junction Temperature, TJ , may be found from:
TJ = TL + £GTJL
£GTJL is the increase in junction temperature above the
lead temperature and may be found from Figure 3 for a
train of power pulses or from Figure 4 for dc power.
£GTJL = £c JLPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ(£GTJ) may be estimated.
Changes in voltage, Vz, can then be found from:
£GV = £c VZ£GTJ
£c VZ, the zener voltage temperature coefficient, is fount
from Figures 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly be
the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 3 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure. 5 be
exceeded.
RATING AND CHARACTERISTICS CURVES
1N5348B THRU 1N5388B
TEMPERATURE COEFFICIENTS
8
6
4
2
0
0 20 40 60 80 100 120
L = LEAD LENGTH TO
HEAT SINK
(
S
E
E
F
I
G
U
R
E
5
)
T
L
,
L
E
A
D
T
E
M
P
E
R
A
T
U
R
E
(
¢J
)
300
200
100
50
30
20
10
50 20 40 60 80 100 120 140 160 180 200 22
0
R
A
N
G
E
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
@
I
Z
T
(
V
O
L
T
S
)
Fig. 1-POWER TEMPERATURE DERATING CURVE Fig. 2-TEMPERATURE COEFFICIENT-RANGE FOR UNITS
6 TO 220 VOLTS
30
20
10
7
5
3
2
1
0.7
0.5
0.3
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
D = 0.5
0.2
0
.1
0.05
0
.
0
2
0
.
0
1
D = 0
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
DUTY CYCLE, D = t1 / t2
SINGLE PULSE
£G
TJL =
£K
JL(t)PPK
REPETITIVE PULSES
£G
TJL =
£K
JL(t,D)PPK
T
I
M
E
(
S
E
C
O
N
D
S
)
Fig. 3-TYPICAL THERMAL RESPONSE
40
30
20
10
0
0 0.2
0.4 0.6
0.8 1
MCUNTE ON 8.0mm
2
COPPER PADS TO
E
A
C
H
T
E
R
M
I
N
A
L
L
,
L
E
A
D
L
E
N
G
T
H
T
O
H
E
A
T
S
I
N
K
(
I
N
C
H
)
40
20
10
4
2
1
0.4
0.2
0.13 4 6 8 10 20 30 40 60 80 100 200
PW = 1ms*
P
W
=
8
.
3
m
s
*
PW = 1000ms*
S
I
N
E
/
S
Q
U
A
R
E
W
A
V
E
P
W
=
1
0
0
m
s
*
N
O
M
I
N
A
L
V
Z
(
V
)
Fig. 4-TYPICAL THERMAL RESISTANCEFig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT VERSUS NOMINAL ZENER
VOLTAGE (SEE NOTE 3)
PD
, MAXIUMU POWER DISSIPATION (WATTS)
£c VZ, TEMPERATURE
C
OEFFICIENT (mA/¢J_@IZT
£c
JL(t,D), TRANSIENT THERMAL
RESISTANCE JUNCTION-TO-
LEAD(¢J/W)
JL, JUNCTION-TO -LEAD THERMAL
RESISTANCE (¢J/W)
IR
, PEAK SURGE CURRENT (AMPS)
RATING AND CHARACTERISTICS CURVES
1N5348B THRU 1N5388B
ZENER VOLTAGE VERSUS ZENER CURRENT
(FIGURES 7,8, AND 9)
30
20
10
5
2
1
0.5
0.2
0.11 10 100 1000
VZ = 6.8V
VZ = 200V
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 6
1000
100
10
1
0.112345678910
T
=
2
5
¢J
T
C
= 25¢J
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE
WIDTH(SEE NOTE 3)Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 6.8 THRU 10 VOLTS
1
0
0
0
100
10
1
0.1
10 20 30 40 50 60
70 80
T = 25¢J
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
1
0
0
0
100
10
1
0.1
80 100 120 140 160 180
200 220
V
Z
,
Z
E
N
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Fig. 8-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 11 THRU 75 VOLTSFig. 9-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 82 THRU 200 VOLTS
*** Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be
exceeded
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)