TOSHIBA TLP733({(D4)SERIES,TLP747(D4)SERIES TOSHIBA PHOTOCOUPLER TLP733(D4)SERIES , TLP747(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0Q884 OPTION : (D4) Types : TLP733, TLP734, TLP733F, TLP734F, TLP747G, TLP747J, TLP747GF, TLP747JF Type designations for Option : (D4), which are tested under VDE0884 requirements. D4 : VDEO884 option Ex, : TLP734 (D4-GR-LF4) GR : CTR rank LF4_ : lead bend Note : Use Toshiba standard type number for safety standard application. Ex, TLP734 (D4-GR-LF4) TLP734 VDE0884 ISOLATION CHARACTERISTICS DESCRIPTION SYMBOL | RATING UNIT Application Classification (DIN VDEO110 Teil 1/01.89, Table 1) for rated mains voltage =300Vyms LIV ~~ for rated mains voltage=600Vimg LI Climatic Classification (DIN IEC68 Teil 1/09.80) 40/100 721 Z Pollution Degree (DIN VDEO110 Teil 1/01.89) 2 Maximum Operating Insulation Voltage TLPxxx _ type 630 TLPsxxF type VIORM 890 Vpk Input to output Test Voltage, Method A TLPxxx type 945 Vere. 5X VIORM Type and Sample Test Vopr Vpk =60s Partial Discharge <5pC TLPxxxF type 1335 Input to output Test Voltage, Method B TLPxxx type 1180 Vpr=1.875X VIORM, 100% Production Test Vopr Vpk tp=1s, Partial Discharge <5pC TLPxxxF type 1670 Highest Permissible Overvoltage (Transient Overvoltage, tp: =16s) VTR 6000 Vpk Safety Limiting Values (Max. permissible ratings in case of fault, also refer to thermal derating curve) Current Unput current Ip, Pgj=0) Tj 400 mA Power (Output or Total Power Dissipation) Pgj 700 mW Temperature Tsi 150 C Insulation Resistance, VjQ=S500V, Ta=25C 21012 = T, Regi >4199 Q Vig =500V, Ta=Tgj =10 This data sheet refers to TLP733 (D4, M) SERIES, TLP747F (D4, M) SERIES that previously has a white-resin mold and have been changed, When designing new products please use black mold- resin devices, 961 001EBC2 Onerating ranges as set fart TOSHIBA, Semiconductor Reliability. 4 Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified he most recent products specitications. Also, please keep in mind the precautions and conditions set forth in the 1998-02-27 1/3 TOSHIBA TLP733({(D4)SERIES,TLP747(D4)SERIES INSULATION RELATED SPECIFICATIONS 7.62mm pitch 10,16mm pitch TLPxxx type TLPxxxF type Minimum Creepage Distance (*) | Cr 7.0mm 8.0mm. Minimum Clearance (*) | Cl 7.0mm 8.0mm Minimum Insulation Thickness ti 6.5mm Comperative Tracking Index CTI 175 (DIN IEC112 / VDE0303, Part 1) (VDE0110 Teil 1/01.89 Group Ila) ((*) in accordance with DIN VDEOQ110 Teil 1/01,89, Table 2, & 4) (#1) Ifa printed circuit is incorporated, the creepage distance and clearance may be reduced below this value (e. g. at a standard distance between soldering eye centres of 7.5mm). If this is not permissible, the user shall take suitable measures. (#2) This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits, VDE Test sign : Marking on product for VDEO884 [> Marking on packing for VDEQ884 D 96 1001EBC2" @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulvrize the product, or us chemicals to dissolve them. When disposing of the products, follow the appropriate rqulations. Do not dispos of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATIGN or others. @ The information contained herein is subject to change without notice. 1998-02-27 2/3 TOSHIBA TLP733({(D4)SERIES,TLP747(D4)SERIES Figure 1 Partial discharge measurement procedure according to VDE0884 Destructive test for qualification and sampling tests. Method A VINITIAL (6kV) (945V for TLPxxx) Vor (1335V for TLPxxxF) (for type and sampling tests, destructive tests) - VIORM =1 1 1 2 e t8 os + J 74__.(680V for TLPxxx) 3 _ 1 I tp (Measuring time for i i (890V for TLPxxxF) i i = Lt tb partial discharge) = ees ; | tg! nr t tini =10s iti! tini itg! th st = Figure 2 Partial discharge measurement procedure according to VDE0884 Non-destructive test for 100% inspection. (1180V for TLPxxx) Method B y Vpr (1670V for TLPxxxF) (for sample test, non- < 1 Viorm destructive test) Pt 1_|__7Z__ (680V for TLPzxx) ta. t O14 (890V for TLPzxxF) 3, t4 =0.1s ! ! tp (Measuring time for partial discharge) =1s t =1. tt 1 b 1.2s 4 tp - t te i 11 a3 D bL4! Figure 3 Dependency of maximum safety ratings on ambient temperature ~ = 1.4 500 S1 (mA)] 400 300 0 25 50 75 100 125 150 175 Ta CC) 1998-02-27 3/3