Hardware Documentation Data Sheet (R) HAL 5xy Hall-Effect Sensor Family Edition Jan. 11, 2010 DSH000020_004E HAL 5xy DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks - HAL Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET Contents Page Section Title 4 4 4 5 5 5 6 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features: Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability and Welding 7 2. Functional Description 8 8 13 13 13 13 14 15 16 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview 22 22 24 26 28 30 32 34 36 38 40 42 44 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.7. 4.8. 4.9. 4.10. 4.11. 4.12. Type Description HAL 501 HAL 502 HAL 503 HAL 504 HAL 505 HAL 506 HAL 507 HAL 508 HAL 509 HAL 516 HAL 519 HAL 523 46 46 46 46 46 5. 5.1. 5.2. 5.3. 5.4. Application Notes Ambient Temperature Extended Operating Conditions Start-Up Behavior EMC and ESD 48 6. Data Sheet History Micronas Jan. 11. 2010; DSH000020_004EN 3 HAL 5xy DATA SHEET 1.2. Family Overview Hall Effect Sensor Family in CMOS technology Release Note: Revision bars indicate significant changes to the previous edition. The types differ according to the magnetic flux density values for the magnetic switching points and the temperature behavior of the magnetic switching points, and the mode of switching. 1. Introduction The HAL 5xy family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 150 C. All sensors are available in the SMD-package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features: Type Switching Behavior Sensitivity see Page 501 bipolar very high 22 502 unipolar low 24 503 unipolar high 26 504 unipolar medium 28 505 latching low 30 506 unipolar high 32 507 unipolar medium 34 508 unipolar medium 36 509 unipolar low 38 516 unipolar with inverted output high 40 519 unipolar with inverted output (north polarity) high 42 523 unipolar low 44 - switching offset compensation at typically 62 kHz - operates from 3.8 V to 24 V supply voltage Latching Sensors: - overvoltage protection at all pins The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - reverse-voltage protection at VDD-pin - magnetic characteristics are robust regarding mechanical stress effects - short-circuit protected open-drain output by thermal shut down - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. - ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to ISO 7637 4 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET Unipolar Switching Sensors: 1.4. Operating Junction Temperature Range The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to Section 5.1. on page 46 for details. 1.5. Hall Sensor Package Codes HALXXXPA-T The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side. Temperature Range: A or K Package: SF for SOT89B-1 UA for TO92UA Type: 5xy 1.3. Marking Code Example: HAL505UA-K All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type: 505 Package: TO92UA Temperature Range: TJ = -40 C to +140 C Type Temperature Range A K HAL 501 501A 501K HAL 502 502A 502K HAL 503 503A 503K HAL 504 504A 504K HAL 505 505A 505K HAL 506 506A 506K HAL 507 507A 507K HAL 508 508A 508K HAL 509 509A 509K HAL 516 516A 516K HAL 519 519A 519K HAL 523 523A 523K Micronas Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". Jan. 11. 2010; DSH000020_004EN 5 HAL 5xy DATA SHEET 1.6. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 2, 4 OUT GND Fig. 1-1: Pin configuration 6 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET 2. Functional Description HAL 5xx HAL 5xy The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Thus, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. VDD 1 Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hall Plate Hysteresis Control Short Circuit & Overvoltage Protection Comparator OUT Output Switch 3 Clock GND 2 Fig. 2-1: HAL 5xx block diagram fosc t B BON t Shunt protection devices clamp voltage peaks at the output pin and VDD pin together with external series resistors. Reverse current is limited at the VDD pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD pin for reverse voltages ranging from 0 V to -15 V. VOUT VOH VOL t IDD 1/fosc = 16 s tf t Fig. 2-2: Timing diagram Micronas Jan. 11. 2010; DSH000020_004EN 7 HAL 5xy DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g 8 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET Fig. 3-2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g Micronas Jan. 11. 2010; DSH000020_004EN 9 HAL 5xy DATA SHEET Fig. 3-3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g 10 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET Fig. 3-4: TO92UA-1: Dimensions ammopack inline, spread Micronas Jan. 11. 2010; DSH000020_004EN 11 HAL 5xy DATA SHEET Fig. 3-5: TO92UA-2: Dimensions ammopack inline, not spread 12 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 TO92UA-1/-2 y 0.95 mm nominal 1.0 mm nominal A4 0.3 mm nominal 0.3 mm nominal D1 see drawing 3.05 mm +/- 0.05 mm H1 not applicable min. 21 mm max. 23.1 mm 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V VO Output Voltage 3 -0.3 281) V IO Continuous Output On Current 3 - 501) mA TJ Junction Temperature Range -40 1702) C 1) 2) as long as TJmax is not exceeded t < 1000 h 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Micronas Jan. 11. 2010; DSH000020_004EN 13 HAL 5xy DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 3.8 24 V IO Continuous Output On Current 3 0 20 mA VO Output Voltage (output switched off) 3 0 24 V 14 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET 3.6. Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 C IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms VOZ Overvoltage Protection at Output 3 - 28 32 V IOH = 25 mA, TJ = 25 C, t = 20 ms VOL Output Voltage 3 - 130 280 mV IOL = 20 mA , TJ = 25 C VOL Output Voltage over Temperature Range 3 - 130 400 mV IOL = 20 mA IOH Output Leakage Current 3 - 0.06 0.1 A Output switched off, TJ = 25 C, VOH = 3.8 to 24 V IOH Output Leakage Current over Temperature Range 3 - - 10 A Output switched off, TJ 150 C, V OH = 3.8 to 24 V fosc Internal Oscillator Chopper Frequency - - 62 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 50 - s VDD = 12 V 1) tr Output Rise Time 3 - 75 400 ns tf Output Fall Time 3 - 50 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF RthJSB case SOT89B-1 Thermal Resistance Junction to Substrate Backside - - 150 200 K/W RthJA case TO92UA-1, TO92UA-2 Thermal Resistance Junction to Soldering Point - - 150 200 K/W 1) Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size see Fig. 3-6 B > BON + 2 mT or B < BOFF - 2 mT for HAL50x, B > BOFF + 2 mT or B < BON - 2 mT for HAL51x 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3-6: Recommended pad size SOT89B-1 Dimensions in mm Micronas Jan. 11. 2010; DSH000020_004EN 15 HAL 5xy DATA SHEET 3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter Switching Type TJ On point BON Off point BOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C -0.8 0.6 2.5 -2.5 -0.8 0.8 0.5 1.4 2 mT 25 C -0.5 0.5 2.3 -2.3 -0.7 0.5 0.5 1.2 1.9 mT 170 C -1.5 0.7 3 -2.5 -0.2 2 0.4 0.9 1.8 mT HAL 502 -40 C 1 2.8 5 -5 -2.8 -1 4.5 5.6 7.2 mT latching 25 C 1 2.6 4.5 -4.5 -2.6 -1 4.5 5.2 7 mT 170 C 0.9 2.3 4.3 -4.3 -2.3 -0.9 3.5 4.6 6.8 mT HAL 503 -40 C 6.4 8.6 10.8 -10.8 -8.6 -6.4 14.6 17.2 20.6 mT latching 25 C 6 8 10 -10 -8 -6 13.6 16 18 mT 170 C 4 6.4 8.9 -8.9 -6 -4 11 12.4 16 mT HAL 504 -40 C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT unipolar 25 C 9.5 12 14.5 5 7 9 4 5 6.5 mT 170 C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT HAL 505 -40 C 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 mT latching 25 C 11 13.5 17 -17 -13.5 -11 24 27 32 mT 170 C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 mT HAL 506 -40 C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT unipolar 25 C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT 170 C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT HAL 507 -40 C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 mT unipolar 25 C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 mT 170 C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 mT HAL 508 -40 C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT unipolar 25 C 15 18 20.7 13.5 16 19 1.5 2 2.7 mT 170 C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT HAL 509 -40 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT unipolar 25 C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT 170 C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT HAL 516 -40 C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT unipolar 25 C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT inverted 170 C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT HAL 501 bipolar Note: For detailed descriptions of the individual types, see pages 22 and following. 16 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET Magnetic Characteristics Overview, continued Sensor Parameter Switching Type TJ On pointON Off pointOFF Hysteresis BHYS Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 mT -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 mT HAL 519 -40 C unipolar 25 C inverted 170 C -5.2 -3.0 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 mT HAL 523 -40 C 28 34.5 42 18 24 30 7 10.5 14 mT unipolar 25 C 28 34.5 42 18 24 30 7 10.5 14 mT 170 C 28 34.5 42 18 24 30 7 10.5 14 mT Note: For detailed descriptions of the individual types, see pages 22 and following Micronas Jan. 11. 2010; DSH000020_004EN 17 HAL 5xy DATA SHEET mA 25 mA 5 HAL 5xx HAL 5xx 20 IDD IDD 4 15 VDD = 24 V 10 VDD = 12 V 3 5 2 0 VDD = 3.8 V TA = -40 C -5 TA = 25 C 1 TA = 170 C -10 -15 -15 -5 5 15 0 -50 35 V 25 50 100 150 VDD TA Fig. 3-7: Typical supply current versus supply voltage Fig. 3-9: Typical supply current versus ambient temperature mA 5.0 kHz 100 HAL 5xx IDD 4.0 fosc TA = -40 C 3.5 HAL 5xx VDD = 3.8 V 80 70 TA = 25 C 60 3.0 TA = 100 C 2.5 50 VDD = 4.5 V ... 24 V TA = 170 C 2.0 40 1.5 30 1.0 20 0.5 10 0.0 200 C 90 4.5 1 2 3 4 5 6 7 8V 0 -50 VDD Fig. 3-8: Typical supply current versus supply voltage 18 0 0 50 100 150 200 C TA Fig. 3-10: Typ. internal chopper frequency versus ambient temperature Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET kHz 100 mV 400 HAL 5xx HAL 5xx IO = 20 mA 90 fosc 350 VOL 80 300 70 TA = 170 C TA = 25 C 250 60 TA = -40 C 50 TA = 100 C 200 TA = 170 C 40 TA = 25 C 150 TA = -40 C 30 100 20 50 10 0 0 5 10 15 20 25 30 V 0 0 5 10 15 VDD 25 30 V VDD Fig. 3-11: Typ. internal chopper frequency versus supply voltage kHz 100 20 HAL 5xx Fig. 3-13: Typical output low voltage versus supply voltage mV 600 HAL 5xx IO = 20 mA 90 fosc VOL 500 80 70 TA = 25 C 400 TA = -40 C 60 50 TA = 170 C 300 TA = 170 C 40 TA = 100 C 200 30 TA = 25 C 20 100 TA = -40 C 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V 0 3.0 VDD 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-12: Typ. internal chopper frequency versus supply voltage Micronas 3.5 Fig. 3-14: Typical output low voltage versus supply voltage Jan. 11. 2010; DSH000020_004EN 19 HAL 5xy DATA SHEET mV 400 102 HAL 5xx IO = 20 mA VDD = 3.8 V IOH 300 HAL 5xx 101 I OH VDD = 4.5 V 100 VOH = 24 V VDD = 24 V 10-1 200 10-2 VOH = 3.8 V 10-3 100 10-4 0 -50 0 50 100 150 10-5 -50 200 C 0 50 100 TA Fig. 3-17: Typ. output leakage current versus ambient temperature dB V 30 HAL 5xx 104 HAL 5xx VP = 12 V TA = 25 C 103 IOH 102 101 200 C TA Fig. 3-15: Typ. output low voltage versus ambient temperature 150 IDD 20 Quasi-PeakMeasrement 10 max. spurious signals TA = 170 C 100 TA = 150 C 10-1 TA = 100 C 0 10-2 10-3 10-4 TA = 25 C -10 TA = -40 C -20 10-5 10-6 15 20 25 30 35 V -30 0.01 20 1 10 100 1000 MHz f VOH Fig. 3-16: Typ. output high current versus output voltage 0.10 Fig. 3-18: Typ. spectrum of supply current Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET dB V HAL 5xx 80 VP = 12 V TA = 25 C 70 Quasi-PeakMeasrement test circuit 2 VDD 60 50 max. spurious signals 40 30 20 10 0 0.01 0.10 1 10 100 1000 MHz f Fig. 3-19: Typ. spectrum of supply current Micronas Jan. 11. 2010; DSH000020_004EN 21 HAL 501 DATA SHEET 4. Type Description Applications 4.1. HAL 501 The HAL 501 is the optimal sensor for applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The HAL 501 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4.1.). - applications with large air gap or weak magnets, The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. - rotating speed measurement, - commutation of brushless DC motors, and - CAM shaft sensors, and - magnetic encoders. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO BHYS Magnetic Features: - switching type: bipolar VOL - very high sensitivity BOFF - typical BON: 0.5 mT at room temperature - typical BOFF: -0.7 mT at room temperature 0 B BON Fig. 4-1: Definition of magnetic switching points for HAL 501 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Min. Typ. Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Max. -40 C -0.8 0.6 2.5 -2.5 -0.8 0.8 0.5 1.4 2 25 C -0.5 0.5 2.3 -2.3 -0.7 0.5 0.5 1.2 1.9 140 C -1.2 0.6 2.8 -2.5 -0.5 1.3 0.5 1.1 1.8 0 mT 170 C -1.5 0.7 3 -2.5 -0.2 2 0.4 0.9 1.8 0.2 mT -0.1 -1.4 -0.1 mT 1.4 mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 22 Jan. 11. 2010; DSH000020_004EN Micronas HAL 501 DATA SHEET mT 3 BON BOFF mT 3 HAL 501 HAL 501 BONmax BON BOFF 2 2 VDD = 3.8 V BOFFmax VDD = 4.5 ... 24 V 1 1 BON BONtyp 0 0 BOFFtyp -1 -1 BOFF TA = -40 C BONmin TA = 25 C -2 -2 TA = 100 C BOFFmin TA = 170 C -3 0 5 10 15 20 25 30 V -3 -50 Fig. 4-2: Typ. magnetic switching points versus supply voltage BON BOFF 50 100 150 200 C TA, TJ VDD mT 3 0 HAL 501 Fig. 4-4: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 2 BON 1 0 -1 BOFF TA = -40 C TA = 25 C -2 TA = 100 C TA = 170 C -3 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Typ. Magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 23 HAL 502 DATA SHEET 4.2. HAL 502 Applications The HAL 502 is the most sensitive latching sensor of this family (see Fig. 4-5). The HAL 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - applications with large air gap or weak magnets, - rotating speed measurement, - commutation of brushless DC motors, - CAM shaft sensors, and For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. - magnetic encoders. Magnetic Features: VO Output Voltage - switching type: latching BHYS - high sensitivity - typical BON: 2.6 mT at room temperature VOL - typical BOFF: -2.6 mT at room temperature BOFF - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 B BON Fig. 4-5: Definition of magnetic switching points for the HAL 502 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 1 2.8 5 -5 -2.8 -1 4.5 5.6 7.2 - 0 - mT 25 C 1 2.6 4.5 -4.5 -2.6 -1 4.5 5.2 7 -1.5 0 1.5 mT 140 C 0.9 2.4 4.3 -4.3 -2.4 -0.9 3.7 4.8 6.8 - 0 - mT 170 C 0.9 2.3 4.3 -4.3 -2.3 -0.9 3.5 4.6 6.8 - 0 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 24 Jan. 11. 2010; DSH000020_004EN Micronas HAL 502 DATA SHEET mT 6 mT 6 HAL 502 HAL 502 BONmax BON BOFF BON BOFF 4 BON 4 BONtyp 2 2 BONmin TA = -40 C VDD = 3.8 V TA = 25 C TA = 100 C 0 0 VDD = 4.5 ... 24 V TA = 170 C BOFFmax -2 -2 BOFF -4 BOFFtyp -4 BOFFmin -6 0 5 10 15 20 25 30 V -6 -50 Fig. 4-6: Typ. magnetic switching points versus supply voltage BON BOFF 50 100 150 200 C TA, TJ VDD mT 6 0 HAL 502 Fig. 4-8: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 4 BON 2 TA = -40 C TA = 25 C 0 TA = 100 C TA = 170 C -2 BOFF -4 -6 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-7: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 25 HAL 503 DATA SHEET 4.3. HAL 503 Applications The HAL 503 is a latching sensor (see Fig. 4-9). The HAL 503 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifters. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: latching - medium sensitivity VOL - typical BON: 7.6 mT at room temperature BOFF - typical BOFF: -7.6 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 B BON Fig. 4-9: Definition of magnetic switching points for the HAL 503 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 6.4 8.4 10.8 -10.8 -8.6 -6.4 14.6 17 20.6 - -0.1 - mT 6 7.6 10 -10 -7.6 -6 13.6 15.2 18 -1.5 0 1.5 mT 140 C 4.4 6.7 9.2 -9.2 -6.4 -4.4 11.5 13.1 16.5 - 0.1 - mT 170 C 4 6.4 8.9 -8.9 -6 -4 11 12.4 16 - 0.2 - mT -40 C 25 C The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 26 Jan. 11. 2010; DSH000020_004EN Micronas HAL 503 DATA SHEET mT 12 mT 12 HAL 503 HAL 503 BONmax BON BON BOFF BON BOFF 8 8 BONtyp 4 4 BONmin TA = -40 C TA = 25 C 0 VDD = 3.8 V 0 TA = 100 C VDD = 4.5... 24 V TA = 170 C -4 BOFFmax -4 BOFFtyp -8 -8 BOFF -12 0 5 10 15 20 BOFFmin 25 30 V -12 -50 Fig. 4-10: Typ. magnetic switching points versus supply voltage HAL 503 BON BON BOFF 50 100 150 200 C TA, TJ VDD mT 12 0 Fig. 4-12: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 8 TA = -40 C 4 TA = 25 C TA = 100 C 0 TA = 170 C -4 -8 BOFF -12 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-11: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 27 HAL 504 DATA SHEET 4.4. HAL 504 Applications The HAL 504 is a unipolar switching sensor (see Fig. 4-13). The HAL 504 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace microswitches, - position and end-point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO BHYS Magnetic Features: - switching type: unipolar, VOL - medium sensitivity - typical BON: 12 mT at room temperature 0 - typical BOFF: 7 mT at room temperature BOFF B BON Fig. 4-13: Definition of magnetic switching points for the HAL 504 - typical temperature coefficient of magnetic switching points is -1000 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz. Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 - 10.2 - mT 25 C 9.5 12 14.5 5 7 9 4 5 6.5 7.2 9.5 11.8 mT 140 C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 - 8.4 - mT 170 C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 - 8 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 28 Jan. 11. 2010; DSH000020_004EN Micronas HAL 504 DATA SHEET mT 18 BON BOFF mT 18 HAL 504 16 BON BOFF 16 BONmax 14 14 BON 12 12 10 10 8 8 BONtyp BONmin BOFFmax BOFFtyp 6 6 TA = -40 C 4 BOFF BOFFmin 4 TA = 25 C TA = 100 C 2 VDD = 3.8 V 2 VDD = 4.5 ... 24 V TA = 170 C 0 0 5 10 15 20 25 30 V 0 -50 Fig. 4-14: Typ. magnetic switching points versus supply voltage mT 18 0 50 100 150 200 C TA, TJ VDD BON BOFF HAL 504 Fig. 4-16: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. HAL 504 16 14 12 BON 10 8 BOFF 6 TA = -40 C 4 TA = 25 C TA = 100 C 2 TA = 170 C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-15: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 29 HAL 505 DATA SHEET 4.5. HAL 505 Applications The HAL 505 is a latching sensor (see Fig. 4-17). The HAL 505 is the optimal sensor for applications with alternating magnetic signals such as: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifters. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Output Voltage VO BHYS Magnetic Features: - switching type: latching, VOL - low sensitivity - typical BON: 13.5 mT at room temperature BOFF - typical BOFF: -13.5 mT at room temperature 0 B BON Fig. 4-17: Definition of magnetic switching points for the HAL 505 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 - 0 - mT 25 C 11 13.5 17 -17 -13.5 -11 24 27 32 -1.5 0 1.5 mT 140 C 9.7 12 16.3 -16.3 -12 -9.7 21 24.2 31.3 - 0 - mT 170 C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 - 0 - mT -40 C The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 30 Jan. 11. 2010; DSH000020_004EN Micronas HAL 505 DATA SHEET mT 20 HAL 505 mT 20 HAL 505 BONmax BON BON 15 BOFF BON 15 BOFF BONtyp 10 10 BONmin 5 5 TA = -40 C TA = 25 C 0 VDD = 4.5 ... 24 V TA = 100 C -5 VDD = 3.8 V 0 -5 TA = 170 C -10 -10 -15 -15 BOFFmax BOFFtyp -20 BOFF 0 5 10 15 20 25 30 V -20 -50 Fig. 4-18: Typ. magnetic switching points versus supply voltage HAL 505 BON BON 15 BOFF 0 50 100 150 200 C TA, TJ VDD mT 20 BOFFmin Fig. 4-20: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 10 TA = -40 C 5 TA = 25 C 0 TA = 100 C TA = 170 C -5 -10 -15 -20 3.0 BOFF 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-19: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 31 HAL 506 DATA SHEET 4.6. HAL 506 Applications The HAL 506 is the most sensitive unipolar switching sensor of this family (see Fig. 4-21). The HAL 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with large air gap or weak magnets, - solid state switches, - contactless solution to replace microswitches, - position and end point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. In the HAL 5xx family, the HAL 516 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar, - high sensitivity VOL - typical BON: 5.5 mT at room temperature 0 - typical BOFF: 3.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF B BON Fig. 4-21: Definition of magnetic switching points for the HAL 506 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD =3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 - 4.8 - mT 25 C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mT 140 C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 - 4 - mT 170 C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 - 3.8 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 32 Jan. 11. 2010; DSH000020_004EN Micronas HAL 506 DATA SHEET mT 8 mT 8 HAL 506 HAL 506 BONmax BON BOFF 7 BON BOFF BON 6 7 6 5 5 4 4 3 3 BOFF TA = -40 C BONmin BOFFtyp BOFFmin TA = 25 C 2 2 TA = 100 C 1 0 0 5 10 15 20 VDD = 4.5 ... 24 V 25 0 -50 30 V 0 50 100 150 200 C TA, TJ Fig. 4-22: Typ. magnetic switching points versus supply voltage mT 8 VDD = 3.8 V 1 TA = 170 C VDD BON BOFF BONtyp BOFFmax HAL 506 7 Fig. 4-24: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 6 5 4 3 TA = -40 C 2 BOFF TA = 25 C TA = 100 C 1 TA = 170 C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-23: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 33 HAL 507 DATA SHEET 4.7. HAL 507 Applications The HAL 507 is a unipolar switching sensor (see Fig. 4-25). The HAL 507 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace micro switches, - position and end point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO BHYS Magnetic Features: - switching type: unipolar VOL - medium sensitivity - typical BON: 18.3 mT at room temperature 0 - typical BOFF: 16.2 mT at room temperature BOFF B BON Fig. 4-25: Definition of magnetic switching points for the HAL 507 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1700 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 - 18.3 - mT 25 C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 - 17.2 - mT 140 C 11.5 14.8 20.2 10.0 13.2 18.2 1.0 1.6 2.6 - 14 - mT 170 C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 - 13 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 34 Jan. 11. 2010; 000020_004ENDS Micronas HAL 507 DATA SHEET mT 25 BON BOFF mT 25 HAL 507 BON BOFF BON 20 HAL 507 BONmax 20 BOFFmax BONtyp 15 15 BOFFtyp BOFF 10 BONmin 10 TA = -40 C BOFFmin TA = 25 C TA = 100 C 5 0 0 5 10 15 20 VDD = 4.5 ... 24 V 25 0 -50 30 V Fig. 4-26: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 25 VDD = 3.8 V 5 TA = 170 C HAL 507 Fig. 4-28: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 20 15 BOFF 10 TA = -40 C TA = 25 C TA = 100 C 5 TA = 170 C 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-27: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; 000020_004ENDS 35 HAL 508 DATA SHEET 4.8. HAL 508 Applications The HAL 508 is a unipolar switching sensor (see Fig. 4-29). The HAL 508 is the optimal sensor for applications with one magnetic polarity such as: - solid state switches, The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - contactless solution to replace microswitches, - position and end-point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar, - medium sensitivity VOL - typical BON: 18 mT at room temperature - typical BOFF: 16 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF B BON Fig. 4-29: Definition of magnetic switching points for the HAL 508 - typical temperature coefficient of magnetic switching points is -1000 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 - 17.8 - mT 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mT 140 C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 - 15 - mT 170 C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 - 14.4 - mT -40 C 25 C The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 36 Jan. 11. 2010; DSH000020_004EN Micronas HAL 508 DATA SHEET mT 25 BON BOFF mT 25 HAL 508 20 BON BOFF BON HAL 508 BONmax 20 BOFFmax BONtyp 15 15 BOFFtyp BONmin BOFF 10 BOFFmin 10 TA = -40 C TA = 25 C VDD = 3.8 V TA = 100 C 5 5 VDD = 4.5 ... 24 V TA = 170 C 0 -50 0 0 5 10 15 20 25 30 V 50 100 150 200 C TA, TJ VDD Fig. 4-30: Typ. magnetic switching points versus supply voltage BON BOFF 0 mT 25 HAL 508 20 BON Fig. 4-32: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. 15 BOFF TA = -40 C 10 TA = 25 C TA = 100 C TA = 170 C 5 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-31: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 37 HAL 509 DATA SHEET 4.9. HAL 509 Applications The HAL 509 is a unipolar switching sensor (see Fig. 4-33). The HAL 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid state switches, - contactless solution to replace microswitches, - position and end-point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar, - low sensitivity - typical BON: 26.8 mT at room temperature VOL - typical BOFF: 23.2 mT at room temperature 0 - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF B BON Fig. 4-33: Definition of magnetic switching points for the HAL 509 - typical temperature coefficient of magnetic switching points is -300 ppm/K Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 - 25.6 - mT 25 C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mT 140 C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 - 24 - mT 170 C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 - 23.7 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 38 Jan. 11. 2010; DSH000020_004EN Micronas HAL 509 DATA SHEET mT 35 HAL 509 mT 35 HAL 509 BONmax BON 30 BOFF BON 30 BOFF BOFFmax BON BONtyp 25 25 BOFFtyp BOFF 20 BONmin 20 BOFFmin 15 15 TA = -40 C TA = 25 C 10 VDD = 3.8 V 10 VDD = 4.5 ... 24 V TA = 100 C TA = 170 C 5 5 0 0 5 10 15 20 25 30 V 0 -50 Fig. 4-34: Typ. magnetic switching points versus supply voltage HAL 509 BON 30 BOFF 50 100 150 200 C TA, TJ VDD mT 35 0 Fig. 4-36: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 25 BOFF 20 15 TA = -40 C 10 TA = 25 C TA = 100 C 5 0 3.0 TA = 170 C 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-35: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 39 HAL 516 DATA SHEET 4.10. HAL 516 Applications The HAL 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4-37). The HAL 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - applications with large air gap or weak magnets, - solid state switches, - contactless solution to replace microswitches, - position and end-point detection, and For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. - rotating speed measurement. Output Voltage In the HAL 5xx family, the HAL 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. VO BHYS Magnetic Features: VOL - switching type: unipolar inverted - high sensitivity 0 - typical BON: 3.5 mT at room temperature BON B BOFF Fig. 4-37: Definition of magnetic switching points for - typical BOFF: 5.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K the HAL 516 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 - 4.8 - mT 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mT 140 C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 - 4 - mT 170 C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 - 3.8 - mT -40 C 25 C The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 40 Jan. 11. 2010; DSH000020_004EN Micronas HAL 516 DATA SHEET mT 8 mT 8 HAL 516 HAL 516 BOFFmax BON BOFF 7 BON BOFF 7 6 6 BOFF 5 5 4 4 BOFFtyp BONmax BOFFmin BON BONtyp 3 3 TA = -40 C TA = 25 C 2 BONmin 2 TA = 100 C 1 0 VDD = 3.8 V 1 TA = 170 C 0 5 10 15 20 25 0 -50 30 V Fig. 4-38: Typ. magnetic switching points versus supply voltage BON BOFF 0 50 100 150 200 C TA, TJ VDD mT 8 VDD = 4.5 ... 24 V HAL 516 7 Fig. 4-40: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 6 5 4 3 BOFF TA = -40 C TA = 25 C 2 TA = 100 C 1 0 3.0 TA = 170 C 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-39: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 41 HAL 519 DATA SHEET 4.11. HAL 519 Applications The HAL 519 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity (see Fig. 4-41). The HAL 519 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. - solid-state switches, - contactless solution to replace microswitches, - position and end-point detection, and - rotating speed measurement. Output Voltage Magnetic Features: VO - switching type: unipolar inverted, north sensitive - high sensitivity BHYS - typical BON: -3.5 mT at room temperature - typical BOFF: -5.5 mT at room temperature VOL - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF - typical temperature coefficient of magnetic switching points is -1000 ppm/K 0 B BON Fig. 4-41: Definition of magnetic switching points for the HAL 519 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 - -4.8 - mT -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 -6.2 -4.5 -3.8 mT 140 C -5.1 -3.1 -1.7 -6.8 -4.8 -3.1 1 1.7 2.6 - -4 - mT 170 C -5.2 -3 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 - -3.8 - mT -40 C 25 C The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 42 Jan. 11. 2010; DSH000020_004EN Micronas HAL 519 DATA SHEET mT 0 mT 0 HAL 519 HAL 519 TA = -40 C BON -1 BOFF VDD = 3.8 V TA = 25 C BON BOFF TA = 100 C -2 -1 BONmax -2 TA = 170 C -3 -3 BONtyp BON -4 -4 -5 -5 BOFF BOFFmax BONmin -6 -6 B typ OFF -7 -7 -8 0 5 10 15 20 30 V 25 -8 -50 Fig. 4-42: Typ. magnetic switching points versus supply voltage mT 0 HAL 519 TA = -40 C -1 BOFFmin 0 50 100 150 200 C TA, TJ VDD BON BOFF VDD = 4.5 V ... 24 V TA = 25 C Fig. 4-44: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. TA = 100 C -2 TA = 170 C BON -3 -4 -5 -6 BOFF -7 -8 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-43: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 43 HAL 523 DATA SHEET 4.12. HAL 523 Applications The HAL 523 is the least sensitive unipolar switching sensor of this family (see Fig. 4-45). The HAL 523 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. - solid-state switches, - contactless solution to replace microswitches, - position and end-point detection, and - rotating speed measurement. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Output Voltage VO Magnetic Features: BHYS - switching type: unipolar, - low sensitivity VOL - typical BON: 34.5 mT at room temperature 0 - typical BOFF: 24 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz BOFF B BON Fig. 4-45: Definition of magnetic switching points for the HAL 523 Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter TJ On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. -40 C 28 34.5 42 18 24 30 7 10.5 14 - 29.3 - mT 25 C 28 34.5 42 18 24 30 7 10.5 14 - 29.3 - mT 140 C 28 34.5 42 18 24 30 7 10.5 14 - 29.3 - mT 170 C 28 34.5 42 18 24 30 7 10.5 14 - 29.3 - mT The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2 44 Jan. 11. 2010; DSH000020_004EN Micronas HAL 523 DATA SHEET mT 45 BON BOFF mT 45 HAL 523 40 BON BOFF BON 35 30 30 BOFF BONmax 40 35 25 HAL 523 25 BONtyp BOFFmax BONmin BOFFtyp 20 20 TA = -40 C 15 15 BOFFmin TA = 25 C 10 TA = 170 C 5 0 0 10 TA = 100 C 5 10 15 20 30 V 0 -50 0 50 100 150 200 C TA, TJ VDD Fig. 4-46: Typ. magnetic switching points versus supply voltage BON BOFF VDD = 4.5 ... 24 V 5 25 mT 45 VDD = 3.8 V HAL 523 40 Fig. 4-48: Magnetic switching points versus temperature Note: In the diagram "Magnetic switching points versus temperature" the curves for: B ONmin, BONmax, BOFFmin, and B OFFmax refer to junction temperature, whereas typical curves refer to ambient temperature. BON 35 30 25 BOFF 20 TA = -40 C 15 TA = 25 C 10 TA = 100 C TA = 170 C 5 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-47: Typ. magnetic switching points versus supply voltage Micronas Jan. 11. 2010; DSH000020_004EN 45 HAL 5xy DATA SHEET 5. Application Notes 5.3. Start-Up Behavior 5.1. Ambient Temperature Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 15). Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + T Under static conditions and continuous operation, the following equation applies: T = IDD x VDD x R th For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. In case of sensors with an inverted switching behavior (HAL 516 ... HAL 519), the output state will be high if B > BOFF and low if B < BON. Note: For magnetic fields between BOFF and BON, the output state of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined output state, the applied magnetic field must be above BON, respectively, below BOFF. 5.4. EMC and ESD T Amax = T Jmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. 5.2. Extended Operating Conditions All sensors fulfil the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 14). Supply Voltage Below 3.8 V For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards ISO 7637. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. RV 220 Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. 1 VEMC VP 1.2 k OUT 3 4.7 nF Note: The functionality of the sensor below 3.8 V is not tested on a regular base. For special test conditions, please contact Micronas. RL VDD 20 pF 2 GND Fig. 5-1: Test circuit for EMC investigations 46 Jan. 11. 2010; DSH000020_004EN Micronas HAL 5xy DATA SHEET LQWHQWLRQDOO\OHIWYDFDQW Micronas Jan. 11. 2010; DSH000020_004EN 47 HAL 5xy DATA SHEET 6. Data Sheet History 1. Final data sheet: "HAL 501...506, 508, 509, 516... 518, Hall Effect Sensor Family, Aug. 11, 1999, 6251485-1DS. First release of the final data sheet.Major changes to the previous edition "HAL501 ... HAL506, HAL 508", Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS: - additional types: HAL509, HAL516 ... HAL518 - additional package SOT-89B - additional temperature range "K" - outline dimensions for SOT-89A and TO-92UA changed 4. Final data sheet: "HAL 5xy Hall-Effect Sensor Family", Nov. 27, 2003, 6251-485-4DS (DSH000020_001EN) . Fourth release of the data sheet . Major changes: - new package diagrams for SOT89-1 and TO92UA-1 - package diagram for TO92UA-2 added - ammopack diagrams for TO92UA-1/-2 added 5. Final data sheet : "HAL 5xy Hall-Effect Sensor Family", Dec. 4, 2008, DSH000020_002EN. Fifth release of the data sheet . Major changes: - Section 1.6. on page 6 "Solderability and Welding" updated - figures "Definition of magnetic switching points" updated for HAL508, HAL516 and HAL519 - absolute maximum ratings changed - electrical characteristics changed - recommended footprint SOT89-B1 added - magnetic characteristics for HAL 501, HAL 503,HAL 506, and HAL 509 changed 2. Final data sheet: "HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family", Feb. 14, 2001, 6251-485-2DS. Second release of the final data sheet. Major changes: - additional types: HAL519, HAL523 - phased-out package SOT-89A removed - temperature range "C" removed - outline dimensions for SOT-89B: reduced tolerances 3. Final data sheet: "HAL 501...506, 508, 509, 516... 519, 523, Hall Effect Sensor Family", Oct. 7, 2002, 6251-485-3DS. Third release of the final data sheet. Major changes: - all package diagrams updated. 6. Final data sheet : "HAL 5xy Hall-Effect Sensor Family", Feb. 12, 2009, DSH000020_003EN. Sixth release of the data sheet . Minor changes: - Section 3.3. "Positions of Sensitive Areas" updated (parameter A4 for SOT89-B1 was added). 7. Final data sheet : "HAL 5xy Hall-Effect Sensor Family", Jan. 11. 2010, DSH000020_004EN. Seventh release of the data sheet. Major changes: - HAL 507 added - TO92UA outline dimensions updated - temperature range "E" removed - outline dimensions for TO-92UA: package diagram updated - absolute maximum ratings changed - section 3.4.1. added - electrical characteristics changed - magnetic characteristics changed Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com 48 Jan. 11. 2010; DSH000020_004EN Micronas