Hardware
Documentation
Hall-Effect Sensor Family
HAL® 5xy
Edition Jan. 11, 2010
DSH000020_004E
Data Sheet
HAL 5xy DATA SHEET
2Jan. 11. 2010; DSH000020_004EN Micronas
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
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subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
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Micronas Trademarks
– HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
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may be trademarks of their respective companies.
Contents
Page Section Title
Micronas Jan. 11. 2010; DSH000020_004EN 3
DATA SHEET HAL 5xy
4 1. Introduction
4 1.1. Features:
4 1.2. Family Overview
5 1.3. Marking Code
5 1.4. Operating Junction Temperature Range
5 1.5. Hall Sensor Package Codes
6 1.6. Solderability and Welding
7 2. Functional Description
8 3. Specifications
8 3.1. Outline Dimensions
13 3.2. Dimensions of Sensitive Area
13 3.3. Positions of Sensitive Areas
13 3.4. Absolute Maximum Ratings
13 3.4.1. Storage and Shelf Life
14 3.5. Recommended Operating Conditions
15 3.6. Characteristics
16 3.7. Magnetic Characteristics Overview
22 4. Type Description
22 4.1. HAL 501
24 4.2. HAL 502
26 4.3. HAL 503
28 4.4. HAL 504
30 4.5. HAL 505
32 4.6. HAL 506
34 4.7. HAL 507
36 4.8. HAL 508
38 4.9. HAL 509
40 4.10. HAL 516
42 4.11. HAL 519
44 4.12. HAL 523
46 5. Application Notes
46 5.1. Ambient Temperature
46 5.2. Extended Operating Conditions
46 5.3. Start-Up Behavior
46 5.4. EMC and ESD
48 6. Data Sheet History
HAL 5xy DATA SHEET
4Jan. 11. 2010; DSH000020_004EN Micronas
Hall Effect Sensor Family
in CMOS technology
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 5xy family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
The sensors of this family differ in the switching behav-
ior and the switching points.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 150 °C.
All sensors are available in the SMD-package
SOT89B-1 and in the leaded versions TO92UA-1 and
TO92UA-2.
1.1. Features:
– switching offset compensation at typically 62 kHz
– operates from 3.8 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust regarding
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– constant switching points over a wide supply volt-
age range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
1.2. Family Overview
The types differ according to the magnetic flux density
values for the magnetic switching points and the tem-
perature behavior of the magnetic switching points,
and the mode of switching.
Latching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put state is not defined for all sensors if the magnetic
field is removed again. Some sensors will change the
output state and some sensors will not.
Type Switching
Behavior Sensitivity see
Page
501 bipolar very high 22
502 unipolar low 24
503 unipolar high 26
504 unipolar medium 28
505 latching low 30
506 unipolar high 32
507 unipolar medium 34
508 unipolar medium 36
509 unipolar low 38
516
unipolar with
inverted outpu
thigh 40
519
unipolar with
inverted output
(north polarity)
high 42
523 unipolar low 44
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 5
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Unipolar Switching Sensors with Inverted Output:
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Unipolar Switching Sensors with Inverted Output
Sensitive to North Pole:
The output turns high with the magnetic north pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole on the branded
side.
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A:T
J = −40 °C to +170 °C
K:T
J = −40 °C to +140 °C
Note: Due to the high power dissipation at high current
consumption, there is a difference between the
ambient temperature (TA) and junction tempera-
ture. Please refer to Section 5.1. on page 46 for
details.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
Type Temperature Range
A K
HAL 501 501A 501K
HAL 502 502A 502K
HAL 503 503A 503K
HAL 504 504A 504K
HAL 505 505A 505K
HAL 506 506A 506K
HAL 507 507A 507K
HAL 508 508A 508K
HAL 509 509A 509K
HAL 516 516A 516K
HAL 519 519A 519K
HAL 523 523A 523K
HALXXXPA-T
Temperature Range: A or K
Package: SF for SOT89B-1
UA for TO92UA
Type: 5xy
Example: HAL505UA-K
→Type: 505
→Package: TO92UA
→Temperature Range: TJ = −40 °C to +140 °C
HAL 5xy DATA SHEET
6Jan. 11. 2010; DSH000020_004EN Micronas
1.6. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
Fig. 1–1: Pin configuration
1VDD
2,4 GND
3OUT
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 7
2. Functional Description
The HAL 5xx sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain out-
put switches to the appropriate state. The built-in hys-
teresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Thus, an internal oscillator provides a
two-phase clock. The Hall voltage is sampled at the
end of the first phase. At the end of the second phase,
both sampled and actual Hall voltages are averaged
and compared with the actual switching point. Subse-
quently, the open drain output switches to the appropri-
ate state. The time from crossing the magnetic switch-
ing level to switching of output can vary between zero
and 1/fosc.
Shunt protection devices clamp voltage peaks at the
output pin and VDD pin together with external series
resistors. Reverse current is limited at the VDD pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–1: HAL 5xx block diagram
Fig. 2–2: Timing diagram
HAL5xx
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Clock
Hall Plate
GND
2
HAL5xy
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
t
V
OL
V
OUT
1/f
osc
= 16 μs
V
OH
B
B
ON
f
osc
t
t
t
f
t
I
DD
t
HAL 5xy DATA SHEET
8Jan. 11. 2010; DSH000020_004EN Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 9
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
HAL 5xy DATA SHEET
10 Jan. 11. 2010; DSH000020_004EN Micronas
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 11
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
HAL 5xy DATA SHEET
12 Jan. 11. 2010; DSH000020_004EN Micronas
Fig. 3–5:
TO92UA-2: Dimensions ammopack inline, not spread
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 13
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-1 TO92UA-1/-2
y 0.95 mm nominal 1.0 mm nominal
A4 0.3 mm nominal 0.3 mm nominal
D1 see drawing 3.05 mm +/- 0.05 mm
H1 not applicable min. 21 mm
max. 23.1 mm
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 −15 281) V
VOOutput Voltage 3 −0.3 281) V
IOContinuous Output On Current 3 −501) mA
TJJunction Temperature Range −40 1702) °C
1) as long as TJmax is not exceeded
2) t < 1000 h
HAL 5xy DATA SHEET
14 Jan. 11. 2010; DSH000020_004EN Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-
fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off)
3024V
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 15
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics
for TJ = 25 °C and VDD = 12 V
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C
IDD Supply Current over
Temperature Range 1 1.6 3 5.2 mA
VDDZ Overvoltage Protection
at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 −28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3 −130 280 mV IOL = 20 mA , TJ = 25 °C
VOL Output Voltage over
Temperature Range 3−130 400 mV IOL = 20 mA
IOH Output Leakage Current 3 −0.06 0.1 μA Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over
Temperature Range 3−−10 μA Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24 V
fosc Internal Oscillator
Chopper Frequency −−62 −kHz
ten(O) Enable Time of Output after
Setting of VDD
1−50 −μsV
DD = 12 V 1)
trOutput Rise Time 3 −75 400 ns VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
tfOutput Fall Time 3 −50 400 ns
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside −−150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–6
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point −−150 200 K/W
1) B > BON + 2 mT or B < BOFF − 2 mT for HAL50x, B > BOFF + 2 mT or B < BON − 2 mT for HAL51x
1.05
1.05
1.80
0.50
1.50
1.45
2.90
HAL 5xy DATA SHEET
16 Jan. 11. 2010; DSH000020_004EN Micronas
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Note: For detailed descriptions of the individual types, see pages 22 and following.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching
Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 501 −40 °C−0.8 0.6 2.5 −2.5 −0.8 0.8 0.5 1.4 2 mT
bipolar 25 °C−0.5 0.5 2.3 −2.3 −0.7 0.5 0.5 1.2 1.9 mT
170 °C−1.5 0.7 3 −2.5 −0.2 2 0.4 0.9 1.8 mT
HAL 502 −40 °C1 2.8 5 −5−2.8 −1 4.5 5.6 7.2 mT
latching 25 °C1 2.6 4.5 −4.5 −2.6 −14.55.27 mT
170 °C 0.9 2.3 4.3 −4.3 −2.3 −0.9 3.5 4.6 6.8 mT
HAL 503 −40 °C 6.4 8.6 10.8 −10.8 −8.6 −6.4 14.6 17.2 20.6 mT
latching 25 °C6810−10 −8−613.61618mT
170 °C4 6.4 8.9 −8.9 −6−4 11 12.4 16 mT
HAL 504 −40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mT
unipolar 25 °C9.51214.5579456.5mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mT
HAL 505 −40 °C 11.8 15 18.3 −18.3 −15 −11.8 26 30 34 mT
latching 25 °C 11 13.5 17 −17 −13.5 −11 24 27 32 mT
170 °C 9.4 11.7 16.1 −16.1 −11.7 −9.4 20 23.4 31.3 mT
HAL 506 −40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mT
unipolar 25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mT
HAL 507 −40 °C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 mT
unipolar 25 °C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 mT
170 °C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 mT
HAL 508 −40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mT
unipolar 25 °C151820.713.516191.52 2.7mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mT
HAL 509 −40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mT
unipolar 25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mT
HAL 516 −40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mT
unipolar 25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mT
inverted 170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mT
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 17
Magnetic Characteristics Overview, continued
Note: For detailed descriptions of the individual types, see pages 22 and following
Sensor Parameter On pointON Off pointOFF Hysteresis BHYS Unit
Switching
Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 519 −40 °C−5.4 −3.8 −2.1 −7.7 −5.9 −4.3 1.6 2.1 2.8 mT
unipolar 25 °C−5−3.6 −2−7.2 −5.5 −3.8 1.5 1.9 2.7 mT
inverted 170 °C−5.2 −3.0 −1.5 −6.8 −4.6 −2.8 0.9 1.6 2.6 mT
HAL 523 −40 °C2834.5421824307 10.514mT
unipolar 25 °C2834.5421824307 10.514mT
170 °C2834.5421824307 10.514mT
HAL 5xy DATA SHEET
18 Jan. 11. 2010; DSH000020_004EN Micronas
−15 −5 5 15 25 35
−15
−10
−5
0
5
10
15
20
25
V
VDD
TA = −40 °C
TA = 25 °C
TA = 170 °C
IDD
mA HAL 5xx
Fig. 3–7: Typical supply current
versus supply voltage
12345678
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
TA = 170 °C
TA = −40 °C
TA = 25 °C
TA = 100 °C
IDD
mA
VDD
HAL 5xx
Fig. 3–8: Typical supply current
versus supply voltage
−50 0 50 100 150 200
0
1
2
3
4
5
TA
°C
VDD = 3.8 V
VDD = 12 V
VDD = 24 V
IDD
mA HAL 5xx
Fig. 3–9: Typical supply current
versus ambient temperature
−50 0 50 100 150 200
0
10
20
30
40
50
60
70
80
90
100
°C
TA
fosc
kHz HAL 5xx
VDD = 3.8 V
VDD = 4.5 V ... 24 V
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 19
0 5 10 15 20 25 30
0
10
20
30
40
50
60
70
80
90
100
V
VDD
TA = 170 °C
T
A
= −40 °C
TA = 25 °C
kHz HAL 5xx
fosc
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
10
20
30
40
50
60
70
80
90
100
V
VDD
TA = 170 °C
TA = −40 °C
TA = 25 °C
kHz HAL 5xx
fosc
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
0 5 10 15 20 25 30
0
50
100
150
200
250
300
350
400
V
VOL
mV
IO = 20 mA
TA = 170 °C
TA = 25 °C
TA = −40 °C
TA = 100 °C
HAL 5xx
VDD
Fig. 3–13: Typical output low voltage
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
100
200
300
400
500
600
V
VOL
mV
IO = 20 mA
TA = 170 °C
TA = 25 °C
TA = −40 °C
TA = 100 °C
HAL 5xx
VDD
Fig. 3–14: Typical output low voltage
versus supply voltage
HAL 5xy DATA SHEET
20 Jan. 11. 2010; DSH000020_004EN Micronas
−50 0 50 100 150 200
0
100
200
300
400
°C
IO = 20 mA
VDD = 4.5 V
VDD = 3.8 V
VDD = 24 V
mV
TA
IOH
HAL 5xx
Fig. 3–15: Typ. output low voltage
versus ambient temperature
TA = 170 °C
TA = 150 °C
TA = 100 °C
TA = 25 °C
TA = −40 °C
V
IOH
μΑ
VOH
HAL 5xx
15 20 3025 35
10−6
10−5
100
101
102
103
104
10−4
10−3
10−2
10−1
Fig. 3–16: Typ. output high current
versus output voltage
−50 0 50 100 150 200
10−5
10−4
10−3
10−2
10−1
100
101
102
A
°C
VOH = 24 V
VOH = 3.8 V
IOH
μΑ
T
HAL 5xx
Fig. 3–17: Typ. output leakage current
versus ambient temperature
MHz
IDD
f
0.01 0.10 1 10 100 1000
-30
-20
-10
0
10
20
30
μ
dB V
max. spurious
signals
VP = 12 V
TA = 25 ˚C
Quasi-Peak-
Measrement
HAL 5xx
Fig. 3–18: Typ. spectrum of supply current
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 21
MHz
VDD
f
0.01 0.10 1 10 100 1000
0
10
20
30
40
50
60
70
80
μ
dB V
max. spurious
signals
VP = 12 V
TA = 25 °C
Quasi-Peak-
Measrement
test circuit 2
HAL 5xx
Fig. 3–19: Typ. spectrum of supply current
HAL 501 DATA SHEET
22 Jan. 11. 2010; DSH000020_004EN Micronas
4. Type Description
4.1. HAL 501
The HAL 501 is the most sensitive sensor of this family
with bipolar switching behavior (see Fig. 4.1.).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put state is not defined for all sensors if the magnetic
field is removed again. Some sensors will change the
output state and some sensors will not.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: bipolar
– very high sensitivity
–typical B
ON: 0.5 mT at room temperature
–typical B
OFF: −0.7 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL 501 is the optimal sensor for applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
– applications with large air gap or weak magnets,
– rotating speed measurement,
– commutation of brushless DC motors, and
– CAM shaft sensors, and
– magnetic encoders.
Fig. 4–1: Definition of magnetic switching points for
HAL 501
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset BOFFSET Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C−0.8 0.6 2.5 −2.5 −0.8 0.8 0.5 1.4 2 −0.1 mT
25 °C−0.5 0.5 2.3 −2.3 −0.7 0.5 0.5 1.2 1.9 −1.4 −0.1 1.4 mT
140 °C−1.2 0.6 2.8 −2.5 −0.5 1.3 0.5 1.1 1.8 0 mT
170 °C−1.5 0.7 3 −2.5 −0.2 2 0.4 0.9 1.8 0.2 mT
DATA SHEET HAL 501
Micronas Jan. 11. 2010; DSH000020_004EN 23
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
−3
−2
−1
0
1
2
3
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 501
VDD
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
−3
−2
−1
0
1
2
3
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 501
VDD
Fig. 4–3: Typ. Magnetic switching points
versus supply voltage
−50 0 50 100 150 200
−3
−2
−1
0
1
2
3
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 501
Fig. 4–4: Magnetic switching points
versus temperature
HAL 502 DATA SHEET
24 Jan. 11. 2010; DSH000020_004EN Micronas
4.2. HAL 502
The HAL 502 is the most sensitive latching sensor of
this family (see Fig. 4–5).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– high sensitivity
– typical BON: 2.6 mT at room temperature
– typical BOFF: −2.6 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 502 is the optimal sensor for all applications
with alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
– applications with large air gap or weak magnets,
– rotating speed measurement,
– commutation of brushless DC motors,
– CAM shaft sensors, and
– magnetic encoders.
Fig. 4–5: Definition of magnetic switching points for
the HAL 502
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C1 2.8 5 −5−2.8 −1 4.5 5.6 7.2 −0−mT
25 °C1 2.6 4.5 −4.5 −2.6 −14.55.27 −1.5 0 1.5 mT
140 °C 0.9 2.4 4.3 −4.3 −2.4 −0.9 3.7 4.8 6.8 −0−mT
170 °C 0.9 2.3 4.3 −4.3 −2.3 −0.9 3.5 4.6 6.8 −0−mT
DATA SHEET HAL 502
Micronas Jan. 11. 2010; DSH000020_004EN 25
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
−6
−4
−2
0
2
4
6
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 502
VDD
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
−6
−4
−2
0
2
4
6
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 502
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
−6
−4
−2
0
2
4
6
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 502
Fig. 4–8: Magnetic switching points
versus temperature
HAL 503 DATA SHEET
26 Jan. 11. 2010; DSH000020_004EN Micronas
4.3. HAL 503
The HAL 503 is a latching sensor (see Fig. 4–9).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– medium sensitivity
–typical B
ON: 7.6 mT at room temperature
–typical B
OFF: −7.6 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 503 is the optimal sensor for applications
with alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifters.
Fig. 4–9: Definition of magnetic switching points for
the HAL 503
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 6.4 8.4 10.8 −10.8 −8.6 −6.4 14.6 17 20.6 −−0.1 −mT
25 °C6 7.6 10 −10 −7.6 −6 13.6 15.2 18 −1.5 0 1.5 mT
140 °C 4.4 6.7 9.2 −9.2 −6.4 −4.4 11.5 13.1 16.5 −0.1 −mT
170 °C4 6.4 8.9 −8.9 −6−4 11 12.4 16 −0.2 −mT
DATA SHEET HAL 503
Micronas Jan. 11. 2010; DSH000020_004EN 27
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
−12
−8
−4
0
4
8
12
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 503
VDD
Fig. 4–10: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
−12
−8
−4
0
4
8
12
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 503
VDD
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
−12
-8
-4
0
4
8
12
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5... 24 V
mT
BON
BOFF
TA, TJ
HAL 503
Fig. 4–12: Magnetic switching points
versus temperature
HAL 504 DATA SHEET
28 Jan. 11. 2010; DSH000020_004EN Micronas
4.4. HAL 504
The HAL 504 is a unipolar switching sensor (see
Fig. 4–13).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar,
– medium sensitivity
–typical B
ON: 12 mT at room temperature
–typical B
OFF: 7 mT at room temperature
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz.
Applications
The HAL 504 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–13: Definition of magnetic switching points for
the HAL 504
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 −10.2 −mT
25 °C9.51214.5579456.57.29.511.8mT
140 °C 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 −8.4 −mT
170 °C 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 −8−mT
DATA SHEET HAL 504
Micronas Jan. 11. 2010; DSH000020_004EN 29
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
18
BON
BOFF
TA = −40 °C
TA = 170 °C
TA = 100 °C
TA = 25 °C
V
mT
BON
BOFF
HAL 504
VDD
Fig. 4–14: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
2
4
6
8
10
12
14
16
18
BON
BOFF
TA = −40 °C
TA = 170 °C
TA = 100 °C
TA = 25 °C
V
mT
BON
BOFF
HAL 504
VDD
Fig. 4–15: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
2
4
6
8
10
12
14
16
18
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 504
Fig. 4–16: Magnetic switching points
versus temperature
HAL 505 DATA SHEET
30 Jan. 11. 2010; DSH000020_004EN Micronas
4.5. HAL 505
The HAL 505 is a latching sensor (see Fig. 4–17).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching,
– low sensitivity
–typical B
ON: 13.5 mT at room temperature
–typical B
OFF: −13.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 505 is the optimal sensor for applications
with alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifters.
Fig. 4–17: Definition of magnetic switching points for
the HAL 505
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 11.8 15 18.3 -18.3 -15 -11.8 26 30 34 −0−mT
25 °C 11 13.5 17 -17 -13.5 -11 24 27 32 -1.5 0 1.5 mT
140 °C 9.7 12 16.3 -16.3 -12 -9.7 21 24.2 31.3 −0−mT
170 °C 9.4 11.7 16.1 -16.1 -11.7 -9.4 20 23.4 31.3 −0−mT
DATA SHEET HAL 505
Micronas Jan. 11. 2010; DSH000020_004EN 31
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
−20
−15
−10
−5
0
5
10
15
20
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 505
VDD
Fig. 4–18: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
−20
−15
−10
−5
0
5
10
15
20
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 505
VDD
Fig. 4–19: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
−20
−15
−10
−5
0
5
10
15
20
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 505
Fig. 4–20: Magnetic switching points
versus temperature
HAL 506 DATA SHEET
32 Jan. 11. 2010; DSH000020_004EN Micronas
4.6. HAL 506
The HAL 506 is the most sensitive unipolar switching
sensor of this family (see Fig. 4–21).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
In the HAL 5xx family, the HAL 516 is a sensor with the
same magnetic characteristics but with an inverted
output characteristic.
Magnetic Features:
– switching type: unipolar,
– high sensitivity
–typical B
ON: 5.5 mT at room temperature
–typical B
OFF: 3.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 506 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic ampli-
tude at the sensor position such as:
– applications with large air gap or weak magnets,
– solid state switches,
– contactless solution to replace microswitches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–21: Definition of magnetic switching points for
the HAL 506
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD =3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 −4.8 −mT
25 °C 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mT
140 °C 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 −4−mT
170 °C 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 −3.8 −mT
DATA SHEET HAL 506
Micronas Jan. 11. 2010; DSH000020_004EN 33
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 506
VDD
Fig. 4–22: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 506
VDD
Fig. 4–23: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
1
2
3
4
5
6
7
8
°C
BONmax
BOFFmax BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 506
Fig. 4–24: Magnetic switching points
versus temperature
HAL 507 DATA SHEET
34 Jan. 11. 2010; 000020_004ENDS Micronas
4.7. HAL 507
The HAL 507 is a unipolar switching sensor (see
Fig. 4–25).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar
– medium sensitivity
–typical B
ON: 18.3 mT at room temperature
–typical B
OFF: 16.2 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1700 ppm/K
Applications
The HAL 507 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–25: Definition of magnetic switching points for
the HAL 507
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 15.5 19.6 22.5 14.0 17.1 21.5 1.6 2.5 5.2 −18.3 −mT
25 °C 15.0 18.3 20.7 13.5 16.2 19.0 1.5 2.1 2.7 −17.2 −mT
140 °C 11.5 14.8 20.2 10.0 13.2 18.2 1.0 1.6 2.6 −14 −mT
170 °C 10.5 13.7 20.0 9.0 12.3 18.0 0.8 1.4 2.4 −13 −mT
DATA SHEET HAL 507
Micronas Jan. 11. 2010; 000020_004ENDS 35
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
5
10
15
20
25
BOFF
BON
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 507
VDD
Fig. 4–26: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
5
10
15
20
25
BOFF
BON
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 507
VDD
Fig. 4–27: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
5
10
15
20
25
°C
BOFFmax
BONmax
BONtyp
BOFFtyp
BOFFmin
BONmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 507
Fig. 4–28: Magnetic switching points
versus temperature
HAL 508 DATA SHEET
36 Jan. 11. 2010; DSH000020_004EN Micronas
4.8. HAL 508
The HAL 508 is a unipolar switching sensor (see
Fig. 4–29).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar,
– medium sensitivity
–typical B
ON: 18 mT at room temperature
–typical B
OFF: 16 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 508 is the optimal sensor for applications
with one magnetic polarity such as:
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–29: Definition of magnetic switching points for
the HAL 508
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 - 17.8 - mT
25 °C 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mT
140 °C 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 - 15 - mT
170 °C 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 - 14.4 - mT
DATA SHEET HAL 508
Micronas Jan. 11. 2010; DSH000020_004EN 37
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
5
10
15
20
25
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
V
mT
BON
BOFF
HAL 508
VDD
Fig. 4–30: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
5
10
15
20
25
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
V
mT
BON
BOFF
HAL 508
VDD
Fig. 4–31: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
5
10
15
20
25
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 508
Fig. 4–32: Magnetic switching points
versus temperature
HAL 509 DATA SHEET
38 Jan. 11. 2010; DSH000020_004EN Micronas
4.9. HAL 509
The HAL 509 is a unipolar switching sensor (see
Fig. 4–33).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar,
– low sensitivity
–typical B
ON: 26.8 mT at room temperature
–typical B
OFF: 23.2 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −300 ppm/K
Applications
The HAL 509 is the optimal sensor for applications
with one magnetic polarity and strong magnetic fields
at the sensor position such as:
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–33: Definition of magnetic switching points for
the HAL 509
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 −25.6 −mT
25 °C 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mT
140 °C 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 −24 −mT
170 °C 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 −23.7 −mT
DATA SHEET HAL 509
Micronas Jan. 11. 2010; DSH000020_004EN 39
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
5
10
15
20
25
30
35
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
V
mT
BON
BOFF
HAL 509
VDD
Fig. 4–34: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
5
10
15
20
25
30
35
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 509
VDD
Fig. 4–35: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
5
10
15
20
25
30
35
°C
BONmax
BOFFmax BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 509
Fig. 4–36: Magnetic switching points
versus temperature
HAL 516 DATA SHEET
40 Jan. 11. 2010; DSH000020_004EN Micronas
4.10. HAL 516
The HAL 516 is the most sensitive unipolar switching
sensor with an inverted output of this family (see
Fig. 4–37).
The output turns high with the magnetic south pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
In the HAL 5xx family, the HAL 506 is a sensor with the
same magnetic characteristics but with a normal out-
put characteristic.
Magnetic Features:
– switching type: unipolar inverted
– high sensitivity
–typical B
ON: 3.5 mT at room temperature
–typical B
OFF: 5.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 516 is the optimal sensor for all applications
with one magnetic polarity and weak magnetic ampli-
tude at the sensor position where an inverted output
signal is required such as:
– applications with large air gap or weak magnets,
– solid state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–37: Definition of magnetic switching points for
the HAL 516
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BON BOFF
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 −4.8 −mT
25 °C 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mT
140 °C 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 −4−mT
170 °C 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 −3.8 −mT
DATA SHEET HAL 516
Micronas Jan. 11. 2010; DSH000020_004EN 41
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
V
mT
BON
BOFF
HAL 516
VDD
Fig. 4–38: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
1
2
3
4
5
6
7
8
BON
BOFF
TA = −40 °C
TA = 170 °C
TA = 100 °C
TA = 25 °C
V
mT
BON
BOFF
HAL 516
VDD
Fig. 4–39: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
1
2
3
4
5
6
7
8
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 516
Fig. 4–40: Magnetic switching points
versus temperature
HAL 519 DATA SHEET
42 Jan. 11. 2010; DSH000020_004EN Micronas
4.11. HAL 519
The HAL 519 is a very sensitive unipolar switching
sensor with an inverted output sensitive only to the
magnetic north polarity (see Fig. 4–41).
The output turns high with the magnetic north pole on
the branded side of the package and turns low if the
magnetic field is removed. The sensor does not
respond to the magnetic south pole on the branded
side, the output remains low. For correct functioning in
the application, the sensor requires only the magnetic
north pole on the branded side of the package.
Magnetic Features:
– switching type: unipolar inverted, north sensitive
– high sensitivity
–typical B
ON: −3.5 mT at room temperature
–typical B
OFF: −5.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL 519 is the optimal sensor for all applications
with the north magnetic polarity and weak magnetic
amplitude at the sensor position where an inverted
output signal is required such as:
– solid-state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–41: Definition of magnetic switching points for
the HAL 519
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON 0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C -5.4 -3.8 -2.1 -7.7 -5.9 -4.3 1.6 2.1 2.8 −-4.8 −mT
25 °C -5 -3.6 -2 -7.2 -5.5 -3.8 1.5 1.9 2.7 -6.2 -4.5 -3.8 mT
140 °C -5.1 -3.1 -1.7 -6.8 -4.8 -3.1 1 1.7 2.6 −-4 −mT
170 °C -5.2 -3 -1.5 -6.8 -4.6 -2.8 0.9 1.6 2.6 −-3.8 −mT
DATA SHEET HAL 519
Micronas Jan. 11. 2010; DSH000020_004EN 43
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
−8
−7
−6
−5
−4
−3
−2
−1
0
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 519
VDD
Fig. 4–42: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
−8
−7
−6
−5
−4
−3
−2
−1
0
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 519
VDD
Fig. 4–43: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
−8
−7
−6
−5
−4
−3
−2
−1
0
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 V ... 24 V
mT
BON
BOFF
TA, TJ
HAL 519
Fig. 4–44: Magnetic switching points
versus temperature
HAL 523 DATA SHEET
44 Jan. 11. 2010; DSH000020_004EN Micronas
4.12. HAL 523
The HAL 523 is the least sensitive unipolar switching
sensor of this family (see Fig. 4–45).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
For correct functioning in the application, the sensor
requires only the magnetic south pole on the branded
side of the package.
Magnetic Features:
– switching type: unipolar,
– low sensitivity
–typical B
ON: 34.5 mT at room temperature
–typical B
OFF: 24 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL 523 is the optimal sensor for applications
with one magnetic polarity and strong magnetic fields
at the sensor position such as:
– solid-state switches,
– contactless solution to replace microswitches,
– position and end-point detection, and
– rotating speed measurement.
Fig. 4–45: Definition of magnetic switching points for
the HAL 523
Magnetic Characteristics at TJ = −40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C2834.5421824307 10.514−29.3 −mT
25 °C2834.5421824307 10.514−29.3 −mT
140 °C2834.5421824307 10.514−29.3 −mT
170 °C2834.5421824307 10.514−29.3 −mT
DATA SHEET HAL 523
Micronas Jan. 11. 2010; DSH000020_004EN 45
Note: In the diagram “Magnetic switching points ver-
sus temperature” the curves for:
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0 5 10 15 20 25 30
0
5
10
15
20
25
30
35
40
45
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 100 °C
TA = 170 °C
V
mT
BON
BOFF
HAL 523
VDD
Fig. 4–46: Typ. magnetic switching points
versus supply voltage
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
5
10
15
20
25
30
35
40
45
BON
BOFF
TA = −40 °C
TA = 25 °C
TA = 170 °C
TA = 100 °C
V
mT
BON
BOFF
HAL 523
VDD
Fig. 4–47: Typ. magnetic switching points
versus supply voltage
−50 0 50 100 150 200
0
5
10
15
20
25
30
35
40
45
°C
BONmax
BOFFmax
BONtyp
BOFFtyp
BONmin
BOFFmin
VDD = 3.8 V
VDD = 4.5 ... 24 V
mT
BON
BOFF
TA, TJ
HAL 523
Fig. 4–48: Magnetic switching points
versus temperature
HAL 5xy DATA SHEET
46 Jan. 11. 2010; DSH000020_004EN Micronas
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
Under static conditions and continuous operation, the
following equation applies:
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
5.2. Extended Operating Conditions
All sensors fulfil the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 14).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested on a regular base. For special test
conditions, please contact Micronas.
5.3. Start-Up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 15).
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the out-
put will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF
. In case
of sensors with an inverted switching behavior
(HAL 516 ... HAL 519), the output state will be high if B
> BOFF and low if B < BON.
Note: For magnetic fields between BOFF and BON, the
output state of the HAL sensor will be either low
or high after applying VDD. In order to achieve a
defined output state, the applied magnetic field
must be above BON, respectively, below BOFF.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 5–1: Test circuit for EMC investigations
TJTAΔT+=
ΔTI
DD VDD Rth
××=
TAmax TJmax ΔT–=
RV
220 Ω
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 kΩ
20 pF
DATA SHEET HAL 5xy
Micronas Jan. 11. 2010; DSH000020_004EN 47
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HAL 5xy DATA SHEET
48 Jan. 11. 2010; DSH000020_004EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com
6. Data Sheet History
1. Final data sheet: “HAL 501...506, 508, 509, 516...
518, Hall Effect Sensor Family, Aug. 11, 1999, 6251-
485-1DS. First release of the final data sheet.Major
changes to the previous edition “HAL501 ...
HAL506, HAL 508", Hall Effect Sensor ICs, May 5,
1997, 6251-405-1DS:
– additional types: HAL509, HAL516 ... HAL518
– additional package SOT-89B
– additional temperature range “K”
– outline dimensions for SOT-89A and TO-92UA
changed
– absolute maximum ratings changed
– electrical characteristics changed
– magnetic characteristics for HAL 501, HAL 503,HAL
506, and HAL 509 changed
2. Final data sheet: “HAL 501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Feb. 14, 2001,
6251-485-2DS. Second release of the final data
sheet. Major changes:
– additional types: HAL519, HAL523
– phased-out package SOT-89A removed
– temperature range “C” removed
– outline dimensions for SOT-89B: reduced toler-
ances
3. Final data sheet: “HAL 501...506, 508, 509, 516...
519, 523, Hall Effect Sensor Family”, Oct. 7, 2002,
6251-485-3DS. Third release of the final data sheet.
Major changes:
– temperature range “E” removed
– outline dimensions for TO-92UA: package diagram
updated
– absolute maximum ratings changed
– section 3.4.1. added
– electrical characteristics changed
– magnetic characteristics changed
4. Final data sheet: “HAL 5xy Hall-Effect Sensor Fam-
ily”, Nov. 27, 2003, 6251-485-4DS
(DSH000020_001EN) . Fourth release of the data
sheet . Major changes:
– new package diagrams for SOT89-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
5. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Dec. 4, 2008, DSH000020_002EN. Fifth
release of the data sheet . Major changes:
– Section 1.6. on page 6 “Solderability and Welding”
updated
– figures “Definition of magnetic switching points”
updated for HAL508, HAL516 and HAL519
– recommended footprint SOT89-B1 added
– all package diagrams updated.
6. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Feb. 12, 2009, DSH000020_003EN. Sixth
release of the data sheet . Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89-B1 was added).
7. Final data sheet : “HAL 5xy Hall-Effect Sensor
Family”, Jan. 11. 2010, DSH000020_004EN.
Seventh release of the data sheet.
Major changes:
– HAL 507 added
– TO92UA outline dimensions updated