VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 1Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY14940 is an
infrared, 940 nm, side looking emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensities, high optical power and high speed,
molded in clear, untinted PCB based package (with lens) for
surface mounting (SMD).
APPLICATIONS
• Emitter for remote control (38 kHz)
• Learning remote control
• Photointerrupters
• Optical switch
FEATURES
• Package type: surface-mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.0 x 2.51 x 1.2
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 9°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY14940 90 ± 9 940 5
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY14940 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF70 mA
Surge forward current tp = 100 μs IFSM 0.7 A
Power dissipation PV119 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature According to Fig. 10, J-STD-020 Tsd 260 °C
Thermal resistance junction-to-ambient J-STD-051, soldered on PCB RthJA 390 K/W
VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 2Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
0 102030405060708090100
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 390 K/W
0
10
20
30
40
50
70
80
0 102030405060708090100
Tamb - Ambient Temperature (°C)
I
F
- Forward Current (mA)
R
thJA
= 390 K/W
60
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 20 mA, tp = 20 ms VF1.1 1.3 1.5 V
IF = 70 mA, tp = 20 ms VF-1.5-V
IF = 0.7 A, tp = 100 μs VF-3.0-V
Temperature coefficient of VFIF = 20 mA TKVF --0.9-mV/K
Reverse current IRNot designed for reverse operation nA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ-30-pF
Radiant intensity
IF = 20 mA, tp = 20 ms Ie15 25 - mW/sr
IF = 70 mA, tp = 20 ms Ie-90-mW/sr
IF = 0.7 A, tp = 100 μs Ie-560-mW/sr
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira -0.5-μA
Radiant power IF = 70 mA, tp = 20 ms φe-40-mW
Temperature coefficient of
radiant power IF = 70 mA TKφe- -0.21 - %/K
Angle of half intensity ϕ-± 9-deg
Peak wavelength IF = 70 mA λp920 940 960 nm
Spectral bandwidth IF = 70 mA Δλ -55-nm
Temperature coefficient of λpIF = 70 mA TKλp-0.28-nm/K
Rise time IF = 70 mA, 10 % to 90 % tr-5-ns
Fall time IF = 70 mA, 10 % to 90 % tf-6-ns
VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 3Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Relative Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
1
10
100
1000
1.0 1.4 1.8 2.2 2.6 3.0
IF- Forward Current (mA)
VF- Forward Voltage (V)
tp= 100 μs
1.30
1.35
1.40
1.45
1.50
-60 -40 -20 0 20 40 60 80 100
VF- Forward Voltage (V)
Tamb - Ambient Temperature (°C)
IF= 70 mA
tP= 20 ms
90
95
100
105
110
-60 -40 -20 0 20 40 60 80 100
VF, rel - Relative Forward Voltage (%)
Tamb - Ambient Temperature (°C)
IF= 70 mA
tp= 20 ms
1
10
100
1000
1 10 100 1000
Ie,rel - Relative Radiant Intensity (%)
IF- Forward Current (mA)
tp= 100 μs
80
90
100
110
120
-60 -40 -20 0 20 40 60 80 100
Ie, rel - Relative Radiant Intensity (%)
Tamb - Ambient Temperature (°C)
IF= 70 mA
tp= 20 ms
0
20
40
60
80
100
800 850 900 950 1000 1050
Ie, rel - Relative Radiant Intensity (%)
λ- Wavelength (nm)
IF= 70 mA
VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 4Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Ie, rel - Relative Radiant Intensity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ- Angular Displacement
255 °C to 260 °C
10 s max.
6 °C/s max.
3 °C/s max.
3 °C/s max.
150 °C
200 °C
217 °C
60 s to 120 s60 s max.
Time
Temperature
VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 5Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY14940
Recommended Solder Pad
3.00
1.201.20
Soldering
terminal
Cathode
mask
1.001.00
Polarity
+
-
1.60
1.10
Molding
body (lens)
1.90
2.51
Not indicated tolerances ± 0.1 mm
0.90
1.40
1.80
0.90
VSMY14940
www.vishay.com Vishay Semiconductors
Rev. 1.6, 22-Sep-17 6Document Number: 84209
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY14940
R0.50
Anode
mask
8.00
+ 0.30
- 0.10
Ø 1.00
+ 0.25
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
Ø 1.50 ± 0.10
1.75 ± 0.10
3.50 ± 0.05
0.25 ± 0.02
1.40 ± 0.10
Cathode
mask
1.8
3.30
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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