High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Dimensions (Unit : mm) Features 1) Very low output-on resistance (Ron). 2) Low capacitance. 2SC4774 2.0 0.9 0.7 0.2 0.3 (3) Collector power dissipation Junction temperature Storage temperature Symbol Limits Unit VCBO VCEO 12 6 VEBO IC 3 50 V V V mA PC 0.2 W Tj Tstg 150 -55 to +150 C C 2.1 (1) (2) 0.1Min. Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 1.25 Absolute maximum ratings (Ta=25C) 0.65 0.65 0.15 1.3 Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 2SC4713K Packaging specifications and hFE 2.9 2SC4713K Package hFE UMT3 S SMT3 S Marking Code Basic ordering unit (pieces) BM T106 3000 BM T146 3000 Denotes h 1.1 0.4 0.8 (3) (2) (1) 0.95 0.95 0.15 FE 1.9 0.3Min. 2SC4774 1.6 2.8 Type Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 12 6 IC=10A IC=1mA BVEBO 3 - - - V V Emitter-base breakdown voltage V IE=10A ICBO - - - - - 0.5 A IEBO - 0.5 VCB=10V VEB=2V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) - - - 0.3 A V DC current transfer ratio hFE 560 - Transition frequency fT - 800 1 - 1.7 MHz pF 2 - Output capacitance Cob 180 300 - Output-on resistance Ron - Conditions IC/IB=10mA/1mA VCE/IC=5V/5mA VCE=5V, IE= -10mA, f=200MHz VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.C 2SC4774 / 2SC4713K Data Sheet Electrical characteristic curves 8 25mA 20mA 6 15mA 4 10mA 5mA 2 0 0 1 2 30 0.1mA 20 10 IB=0A 4 5 3 0.2mA 0 0 0.1 0.2 IB=0mA 0.4 0.5 0.3 -25C VCE=5V 40 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) characteristics ( ) Ta=25C VCE=5V 2000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 GAIN BANDWIDTH PRODUCT : fT (MHz) DC CURRENT TRANSFER RATIO : hFE characteristics ) 1000 1000 Ta=25C IC/IB=10 500 200 100 50 20 10 5 0.1 0.2 0.5 1 2 5 10 20 500 200 100 50 20 0.1 0.2 50 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. Fig.5 Collector-emitter saturation Fig.4 DC current gain vs. collector current Ta=25C VCE=5V 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) collector current voltage vs. collector current 20 50 Ta=25C f=1MHz 5 2 1 0.5 0.2 0.1 0.2 0.5 1 2 5 10 20 Ta=25C f=500kHz i=100mVrms RL=1k 50 Ta=25C f=1MHz 10 ON RESISTANE : Ron () 10 20 OUTPUT CAPACITANCE : Cob (pF) FEEDBACK CAPACITIANCE : Cre (pF) 25C 125C A 40 50 0.3mA 1.0 m 30mA mA A 0.5 0.4m Ta=25C COLLECTOR CURRENT : IC (mA) 50 35mA Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 5 2 1 0.5 20 10 5 2 0.2 0.1 0.2 1 0.1 0.2 0.5 1 2 5 10 20 0.5 1 2 5 10 20 50 50 COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. Fig.8 Back capacitance voltage 2/2 Fig.9 Output-on resistance vs. base current 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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