Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
UMN20N
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
General switching
lFeatures
1)Small mold type. (UMD6)
2)Low leakage
lConstruction lStructure
Silicon epitaxial planer
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 1.2 V IF=100mA
IR- - 0.01 μA VR=20V
Ct - - 5.0 pF
VR=0.5V , f=1.0MHz
400
Parameter
Limits
Reverse voltage (repetitive peak)
40
Reverse voltage (DC)
35
Parameter
Forward voltage
Reverse current
Capacitance between terminals
lTaping dimensions (Unit : mm)
Junction temperature
150
Storage temperature
-55 to +150
Forward current (repetitive peak)
225
Average rectified forward current
100
Surge current (t=1sec)
UMD6
0.35
0.9
1.6
0.65
0.65
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)
(6)
(4)
1.3±0.1
0.65
0.65
(1)
(3)
(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
1/4
2011.10 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMN20N
0
1
2
3
4
5
AVE.:2.16pF
Ta=25°C
f=1MHz
VR=0.5V
n=30pcs
0
10
20
30
40
50
Tj=25°C
VR=20V
n=30pcs
930
935
940
945
950
955
960
965
970
975
980
AVE.:950mV
Tj=25°C
I
F
=100mA
n=50pcs
0
1
2
3
4
010 20 30
f=1MHz
0.0001
0.001
0.01
0.1
1
0 0.5 1 1.5
Tj=125°C
Tj=25°C
Tj=150°C
Tj=75°C
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(A)
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
Tj=125°C
Tj=25°C
Tj=150°C
Tj=75°C
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(pA)
IR DISPERSION MAP
AVE.:4.3pA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
2/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMN20N
0
1
2
3
4
5
6
7
C=200pF
R=0Ω
C=150pF
R=330Ω
AVE:2.30kV
AVE:5.83kV
0.3
0.35
0.4
0.45
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1×IR
n=10pcs
0
1
2
3
4
5
6
7
8
9
10
AVE.:4.0A
8.3ms
IFSM
1cyc
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(us)
AVE:0.391us
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
110 100
8.3ms
IFSM
1cyc.
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
1
2
3
4
5
6
110 100
time
IFSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
3/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMN20N
0
0.1
0.2
025 50 75 100 125 150
D.C.
D=1/2
Sin(θ＝180)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0 0.05 0.1 0.15 0.2
D.C.
D=1/2
Sin(θ＝180)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.0E+00
2.0E-07
4.0E-07
6.0E-07
8.0E-07
1.0E-06
010 20 30 40
D.C.
D=1/2
Sin(θ＝180)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
T
Tj=150°C
D=t/T
t
VR
Io
VR=20V
0A
0V
4/4 2011.10 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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