BC107
BC108-BC109
January 1989
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
The BC107, BC108 and BC109 are silicon planar
epitaxial NPN transistors in TO-18 metal case.They
are suitable for use in driver stages, low noise input
stages and signal processing circuits of television
receivers. The complementary PNP types are re-
spectively theBC177, BC178 and BC179.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol Parameter BC107 BC108 BC109 Unit
VCBO Collector-base Voltage (IE=0) 50 30 30 V
VCEO Collector-emitter Voltage (IB=0) 45 20 20 V
V
EBO Emitter-base Voltage (IC=0) 6 5 5 V
ICCollector Current 100 mA
Ptot Total Power Dissipation at Tamb ≤25 °C
at Tcase ≤25 °C0.3
0.75 W
W
Tstg Storage Temperature – 55 to 175 °C
TjJunction Temperature 175 °C
DESCRIPTION
TO-18
INTERNAL SCHEMATIC DIAGRAM
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ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff
Current (IE=0) for BC107
VCB =40V
VCB =40V
for BC108-BC
VCB =20V
VCB =20V
Tamb = 150 °C
109
Tamb = 150 °C
15
15
15
15
nA
µA
µA
µA
V(BR)CBO Collector-base
Breakdown Voltage
(IE=0)
IC=10µAfor BC107
for BC108
for BC109
50
30
30
V
V
V
V(BR)CEO* Collector-emitter
Breakdown Voltage
(IB=0)
IC=10mA for BC107
for BC108
for BC109
45
20
20
V
V
V
V(BR)EBO Emitter-base
Breakdown Voltage
(IC=0)
IE=10µAfor BC107
for BC108
for BC109
6
5
5
V
V
V
VCE(sat)* Collector-emitter
Saturation Voltage IC=10mA
I
C=100mA I
B= 0.5 mA
IB=5mA 70
200 250
600 mV
mV
VBE* Base-emitter Voltage IC=2mA
I
C=10mA V
CE =5V
V
CE =5V 550 650
700 700
700 mV
mV
VBE(sat)* Base-emitter Saturation
Voltage IC=10mA
I
C=100mA I
B= 0.5 mA
IB=5mA 750
900 mV
mV
hFE* DC Current Gain IC=2mA
I
C=10µA
V
CE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
VCE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
110
110
200
110
110
200
420
200
200
420
40
40
100
40
40
100
230
180
290
350
180
290
520
350
290
520
120
90
150
120
90
150
270
150
270
450
220
450
800
220
450
800
800
450
800
* Pulsed: pulse duration = 300 µs,duty cycle =1 %.
THERMAL DATA
Rth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
Max 200
500 °C/W
°C/W
BC107-BC108-BC109
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ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
hfe Small Signal
Current Gain IC=2mA
f = 1 kHz
IC=10mA
f=100MHz
V
CE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
VCE =10V
250
190
300
370
190
300
500
370
300
550
2
CCBO Collector-base
Capacitance IE=0
f=1MHz V
CB =10V 46
pF
CEBO Emitter-base
Capacitance IC=0
f=1MHz V
EB = 0.5 V 12 pF
NF Noise Figure IC= 0.2 mA
Rg=2kΩ
B=200Hz
I
C= 0.2 mA
Rg=2kΩ
f = 10 Hz to 10
B = 15.7 kHz
VCE =5V
f = 1 kHz
for BC107
for BC108
for BC109
VCE =5V
kHz
for BC109
2
2
1.5
1.5
10
10
4
4
dB
dB
dB
dB
hie Input Impedance IC=2mA
f = 1 kHz VCE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
4
3
4.8
5.5
3
4.8
7
5.5
4.8
7
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
* Pulsed: pulse duration = 300 µs,duty cycle =1 %.
BC107-BC108-BC109
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ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
hre Reverse Voltage Ratio IC=2mA
f = 1 kHz VCE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
2.2x10–4
1.7x10–4
2.7x10–4
3.1x10–4
1.7x10–4
2.7x10–4
3.8x10–4
3.1x10–4
2.7x10–4
3.8x10–4
hoe Output Admittance IC=2mA
f = 1 kHz VCE =5V
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
for BC109
for BC109 Gr. B
for BC109 Gr. C
20
13
26
30
13
26
34
30
26
34
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
* Pulsed: pulse duration = 300 µs,duty cycle =1 %.
DC Normalized Current Gain. Collector--emitter Saturation Voltage.
BC107-BC108-BC109
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Noise Figure (for BC 109 only). Power Rating Chart.
Noise Figure (for BC 109 only). Noise Figure (for BC 109 only).
Collector-base Capacitance. Transition Frequency.
BC107-BC108-BC109
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o45o
L
G
I
DA
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
BC107-BC108-BC109
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponents inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong -Italy - Japan - Korea- Malaysia - Malta - Morocco - The Netherlands -
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BC107-BC108-BC109
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