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Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS@10VÃ5.8 A
ID @ TA = 70°C 4.6
IDM Pulsed Drain Current À46
PD @TA = 25°C Power Dissipation Ã2.0 W
PD @TA = 70°C 1.3
Linear Derating Factor 16 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt Á-5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
IRF7421D1
FETKYä MOSFET / Schottky Diode
Notes:
ÀRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ÁISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ÂPulse width ≤ 300µs; duty cycle ≤ 2%
ÃSurface mounted on FR-4 board, t ≤ 10sec.
Parameter Maximum Units
RθJA Junction-to-Ambient Ã62.5 °C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
10/18/04
The FETKY family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
lCo-packaged HEXFET® Power
MOSFET and Schottky Diode
lIdeal For Synchronous Regulator
Applications
lGeneration V Technology
lSO-8 Footprint
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
A
A
Top View
SO-8
TM
PD- 91411D
IRF7421D1
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
RDS(on) Static Drain-to-Source On-Resistance — 0.026 0.035 VGS = 10V, ID = 4.1A
— 0.040 0.060 VGS = 4.5V, ID = 2.1A
VGS(th) Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
gfs Forward Transconductance 4.6 — — S VDS = 15V, ID = 2.1A
IDSS Drain-to-Source Leakage Current — — 1.0 VDS = 24V, VGS = 0V
——25 V
DS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage — — -100 VGS = -20V
Gate-to-Source Reverse Leakage — — 100 VGS = 20V
QgTotal Gate Charge — 18 27 ID = 4.1A
Qgs Gate-to-Source Charge — 2.2 3.3 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge — 5.9 8.9 VGS = 10V (see figure 10) Â
td(on) Turn-On Delay Time — 6.7 — VDD = 15V
trRise Time — 27 — ID = 4.1A
td(off) Turn-Off Delay Time — 20 — RG = 6.2Ω
tfFall Time — 16 — RD = 3.7Ω Â
Ciss Input Capacitance — 510 — VGS = 0V
Coss Output Capacitance — 200 — pF VDS = 25V
Crss Reverse Transfer Capacitance — 84 — ƒ = 1.0MHz (see figure 9)
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ω
µA
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current (Body Diode) — — 3.1 A
ISM Pulsed Source Current (Body Diode) — — 33
VSD Body Diode Forward Voltage — — 1.0 V TJ = 25°C, IS = 4.1A, VGS = 0V
trr Reverse Recovery Time (Body Diode) — 57 86 ns TJ = 25°C, IF = 4.1A
Qrr Reverse Recovery Charge — 93 140 nC di/dt = 100A/µs Â
MOSFET Source-Drain Ratings and Characteristics
2
Parameter Max. Units. Conditions
IF(av) Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, TA = 25°C
1.2 TA = 70°C
ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
A
Schottky Diode Maximum Ratings
Parameter Max. Units Conditions
VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
IRM Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C
16 TJ = 125°C
CtMax. Junction Capacitance 110 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR
Schottky Diode Electrical Specifications
V
mA
IRF7421D1
www.irf.com 3
2
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Power Mosfet Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltag e (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-S ource Cur r ent (A)
1
10
100
0.1 1 10
A
DS
D
I , Dr a in-to-S our c e Curr e n t (A)
20µs PULSE W IDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10 V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOTTOM 3.0V
V , Drain-to-Source Voltage (V)
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
J
GS
V , Gate -to- S ource Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULS E WIDTH
T = 150°C
DS
J
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.4 0.8 1.2 1.6 2.0 2.
4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 150°C
J
IRF7421D1
4www.irf.com
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.1A
D
0.1
1
10
100
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Curren t (A )
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150° C
Single Pul s e
100µs
1ms
10ms
A
A
J
0.0
0.1
0.2
0 5 10 15 20 25 30 35
I , Drain Current (A)
,
 

0.01
0.02
0.03
0.04
0.05
0.06
0.07
3691215
A
/5
V , Gate-to-Source Voltage (V)
I = 5.8A
IRF7421D1
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Power Mosfet Characteristics
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
V = 24V
V = 15V
DS
DS
I = 4.1A
D
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Du ty facto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ectangular Pulse Dura t ion (s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7421D1
6www.irf.com
Schottky Diode Characteristics
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
Reverse Current - IR (mA)
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1
.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30
R




 

)

J
10
100
1000
0102030
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junc tion Capacitance - C (pF )
A
IRF7421D1
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SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0. 10 [ .004]
4312
FOOTPRINT
8X 0.72 [.028]
6. 46 [.2 5 5 ]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JE DE C OUT L INE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCIN G PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1. 78 [. 0 7
0]
SO-8 (Fetky) Part Marking Information
RECTIFIER
LOGO
INTERNATIONAL
EXAMPLE: THIS IS AN IRF7807D1 (FETKY)
XXXX
807D1
Y = L AST DI GI T OF THE YE AR
A = ASSEMB L Y SI TE CODE
WW = WEEK
LOT CODE
PROD UCT (OPTION AL)
P = DISGNATES LEAD - FREE
DATE C ODE (YW W)
PART NUMBER
IRF7421D1
8www.irf.com
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIME NSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINA L NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONF ORMS TO EIA-481 & EIA-541.
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04